Influence of Dislocations on the I-V Characteristics of Silicon Solar Cells

1995 ◽  
Vol 378 ◽  
Author(s):  
Robert Murphy ◽  
Bhushan L. Sopori ◽  
Doug Rose

AbstractThis paper presents a phenomenological approach for analysis of dislocations in a large-area device like a solar cell. A microscopic model of a dislocation is used to calculate the local effects of a dislocation on the dark and the illuminated characteristics of a p-n junction device. A statistical approach is then used to empirically arrive at the I-V characteristics of a small-area device with a uniform distribution of dislocations. Finally, these results are applied to develop a network model to determine the terminal characteristics of a large-area solar cell of a known spatial distribution of dislocations. We show that the performance of a solar cell is influenced not only by the density of dislocations but also by their spatial distribution; heavily dislocated regions exert a disproportionately large degradation effect on the device characteristics.

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Zengchao Zhao ◽  
Bingye Zhang ◽  
Ping Li ◽  
Wan Guo ◽  
Aimin Liu

The performance of black silicon solar cells with various passivation films was characterized. Large area (156×156 mm2) black silicon was prepared by silver-nanoparticle-assisted etching on pyramidal silicon wafer. The conversion efficiency of black silicon solar cell without passivation is 13.8%. For the SiO2andSiNx:H passivation, the conversion efficiency of black silicon solar cells increases to 16.1% and 16.5%, respectively. Compared to the single film of surface passivation of black silicon solar cells, the SiO2/SiNx:H stacks exhibit the highest efficiency of 17.1%. The investigation of internal quantum efficiency (IQE) suggests that the SiO2/SiNx:H stacks films decrease the Auger recombination through reducing the surface doping concentration and surface state density of the Si/SiO2interface, andSiNx:H layer suppresses the Shockley-Read-Hall (SRH) recombination in the black silicon solar cell, which yields the best electrical performance of b-Si solar cells.


2015 ◽  
Vol 1771 ◽  
pp. 97-107
Author(s):  
Xueshi Tan ◽  
Bingxue Mao ◽  
Feng Zhang ◽  
Jingjing Yang

ABSTRACTFor the industrial application of silicon thin film solar cells, the current focus is on how to realize high-efficiency low-cost production process and minimize light-induced degradation effect, thus effectively reducing the balance-of-system (BOS) costs of system integration. In this paper, a brief introduction based on our development and application in this area is presented, highlighting in the achievement of some layers in a-Si:H/μc-Si:H tandem solar cell by optimizing the property of single layers, such as amorphous intrinsic layer, intermediate reflective layer and microcrystalline intrinsic layer. After transferring the process achievement to the industrial production line, we obtained the low-cost thin-film silicon solar cells with high photovoltaic conversion efficiency of 10.2%.


2007 ◽  
Vol 2007 ◽  
pp. 1-5 ◽  
Author(s):  
U. Gangopadhyay ◽  
K. Kim ◽  
S. K. Dhungel ◽  
H. Saha ◽  
J. Yi

The low-cost chemical bath deposition (CBD) technique is used to prepare CBD-ZnS films as antireflective (AR) coating for multicrystalline silicon solar cells. The uniformity of CBD-ZnS film on large area of textured multicrystalline silicon surface is the major challenge of CBD technique. In the present work, attempts have been made for the first time to improve the rate of deposition and uniformity of deposited film by controlling film stoichiometry and refractive index and also to minimize reflection loss by proper optimization of molar percentage of different chemical constituents and deposition conditions. Reasonable values of film deposition rate (12.13 Å′/min.), good film uniformity (standard deviation <1), and refractive index (2.35) along with a low percentage of average reflection (6-7%) on a textured mc-Si surface are achieved with proper optimization of ZnS bath. 12.24% efficiency on large area (125 mm × 125 mm) multicrystalline silicon solar cells with CBD-ZnS antireflection coating has been successfully fabricated. The viability of low-cost CBD-ZnS antireflection coating on large area multicrystalline silicon solar cell in the industrial production level is emphasized.


2020 ◽  
Vol 49 (15) ◽  
pp. 4725-4731
Author(s):  
Daqing Yang ◽  
Haiduo Liang ◽  
Yujie Liu ◽  
Man Hou ◽  
Liping Kan ◽  
...  

We present a large-area luminescent down-shifting layer consists of polyvinyl alcohol embedding a newly synthesized ternary Eu3+ complex. C-Si solar cell coated with this layer displayed an enhancement of ~15% in external quantum efficiency.


2011 ◽  
Vol 26 (12) ◽  
pp. 1261-1265 ◽  
Author(s):  
Hui MA ◽  
Zhi-Yong LIU ◽  
Yu-Ming LU ◽  
Xiao-Yan JIN ◽  
Chuan-Bing CAI

2006 ◽  
Vol 90 (20) ◽  
pp. 3557-3567 ◽  
Author(s):  
U. Gangopadhyay ◽  
K.H. Kim ◽  
S.K. Dhungel ◽  
U. Manna ◽  
P.K. Basu ◽  
...  

2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn

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