Temperature Dependence of Metal-Semiconductor Contacts on 6H-SiC.
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AbstractWe have examined the temperature dependence of the barrier height of Au, Ag, Ni, and Al, metal-semiconductor contacts on n-type 6H-SiC, and Al metal-semiconductor contacts on p-type 6H-SiC. The barrier height was determined from the (1/C2) vs VR characteristics of the contacts at temperatures ranging from 300K to 670K. The measurements were made at 1 MHz. These measurements were compared to I-V measurements at various temperatures, and to the behavior predicted by standard models.
2008 ◽
Vol 22
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pp. 2309-2319
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1991 ◽
Vol 34
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pp. 51-55
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2017 ◽
Vol 17
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pp. 7107-7114
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2008 ◽
Vol 600-603
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pp. 1341-1344
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