Defect Reduction in GaAs Grown on Si by Using Saw-Tooth-Patterned Substrates

1992 ◽  
Vol 281 ◽  
Author(s):  
Jane G. Zhu ◽  
M. M. Al-Jassim ◽  
N. H. Karam ◽  
K. M. Jones
Keyword(s):  
Dislocation Density ◽  
Chemical Vapor ◽  
Growth Front ◽  
Organic Chemical ◽  
Threading Dislocation ◽  
Defect Reduction ◽  
Dislocation Configuration ◽  
Si Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density

ABSTRACTEpitaxial GaAs layers have been grown on saw-tooth-patterned (STP) Si substrates by metal-organic chemical vapor deposition and analyzed by transmission electron microscopy. The utilization of this special interface feature is effective in suppressing the formation of antiphase boundaries and reducing the threading dislocation density. The growth of GaAs has been studied with the epilayer thicknesses ranging from several hundred angstroms to several microns. Very flat growth front on (100) plane above the STP region is observed. The dislocation density decreases very rapidly in the area farther away from the interface. The dislocation configuration at this STP interface is very different from that at the extensively studied two-dimensional planar interface.

Reduction of Threading Dislocation Density in AlGaN by Indium Incorporation

2003 ◽  
Vol 798 ◽  
Author(s):  
H. Kang ◽  
Z. C. Feng ◽  
I. Ferguson ◽  
S. P. Guo ◽  
M. Pophristic
Keyword(s):  
Dislocation Density ◽  
Structural Properties ◽  
Coherence Length ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Threading Dislocation ◽  
Reciprocal Space Mapping ◽  
Threading Dislocation Density ◽  
Metal Organic

ABSTRACTThe addition of indium, even to small concentrations, to AlGaN has resulted in improved optical and doping properties for these materials. This paper is the first report of improved structural properties for indium containing AlGaN layers. A systematic series of the AlGaN layers with nominal concentration of 20% aluminum were grown by metal-organic chemical vapor deposition with traces amounts of indium incorporated into the layers (up to 0.15% indium). X-ray diffraction analysis of the layers was completed using Williamson Hall plots and reciprocal space mapping to investigate any change in the columnar structure of the initial AlGaN layers. It was found that the threading dislocation densities and lateral coherence length showed a systematic variation with indium incorporation. The threading dislocation density is lowered as indium composition increased with a corresponding increase in lateral coherence length. This indicates that even the incorporation of trace amounts of indium improves the structural properties of these epilayers.

MO-CVD GaAs Grown by Direct Deposition on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
S. M. Vernon ◽  
S. J. Pearton ◽  
J. M. Gibson ◽  
R. Caruso ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Gaas Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Data ◽  
Threading Dislocation Density ◽  
Donor Activity

ABSTRACTGaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si0.7Ge0.3 Grown on Si by Rtcvd

1993 ◽  
Vol 303 ◽  
Author(s):  
G. Patrick Watson ◽  
Eugene A. Fitzgerald ◽  
Bahram Jalali ◽  
Ya-Hong Xie ◽  
Bonnie Weir ◽  
...  
Keyword(s):  
Defect Density ◽  
Chemical Vapor ◽  
Dark Spot ◽  
Threading Dislocation ◽  
Dark Line ◽  
Si Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Line Defects ◽  
Threading Defects

ABSTRACTThe effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocations (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105cm−2, was found in specimens grown at an average grading rate of 10% Ge per pm thickness.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Defect Reduction in Cd1-xZnxTe Epilayers on GaAs Substrates

1994 ◽  
Vol 299 ◽  
Author(s):  
Saket Chadda ◽  
Kevin Malloy ◽  
John Reno
Keyword(s):  
Threading Dislocation ◽  
Full Width ◽  
X Ray Diffraction ◽  
Defect Reduction ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Optimum Period ◽  
Bulk Alloys

AbstractCd0.91Zn0.09Te/CdTe multilayers of various period thicknesses were inserted into Cd0.955Zn0.045Te bulk alloys grown on (001) GaAs. The net strain of the multilayer on the underlying Cd0.955Zn0.045Te was designed to be zero. X-ray diffraction full width at half maximum (FWHM) was used as a means to optimize the period thickness of the multilayer. Transmission electron microscopy of the optimum period thickness samples demonstrated four orders of magnitude decrease in the threading dislocation density. Mechanism of bending by equi-strained multilayers is discussed.

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
C. H. Lin ◽  
B. M. Yen ◽  
Haydn Chen ◽  
T. B. Wu ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Preferential Orientation ◽  
Organic Chemical ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

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