Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy
2008 ◽
Vol 600-603
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pp. 267-272
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Keyword(s):
X Ray
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Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazing incidence synchrotron reflection X-ray topography and transmission electron microscopy. Frank-type faults, which are terminated by four Frank partials with a 1/4[0001] type Burgers vector with the same sign on four different basal planes, are confirmed to be formed by conversion of a 1c threading edge dislocation (TSD) in the substrate as well as simultaneous generation of a 1c TSD during epitaxy. The collation between the topography appearance and the microscopic structure and the variety of Frank faults are shown. Formation of carrot defects and threading dislocation clusters are also investigated.
2017 ◽
Vol 19
(48)
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pp. 32514-32525
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2009 ◽
Vol 43
(1)
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pp. 122-133
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1974 ◽
Vol 32
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pp. 514-515
1982 ◽
Vol 40
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pp. 722-723
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