Direct Nanoscale Patterning by Atomic Manipulation

1995 ◽  
Vol 380 ◽  
Author(s):  
Craig T. Salling
Keyword(s):  
Scanning Tunneling Microscope ◽  
Room Temperature ◽  
Atomic Layer ◽  
Sample Surface ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Nanoscale Patterning ◽  
Direct Patterning ◽  
Scale Structures ◽  
Atomic Manipulation

ABSTRACTThe ability to create atomic-scale structures with the scanning tunneling microscope (STM) plays an important role in the development of a future nanoscale technology. I briefly review the various modes of STM-based fabrication and atomic manipulation. I focus on using a UHV-STM to directly pattern the Si(001) surface by atomic manipulation at room temperature. By carefully adjusting the tip morphology and pulse voltage, a single atomic layer can be removed from the sample surface to define features one atom deep. Segments of individual dimer rows can be removed to create structures with atomically straight edges and with lateral features as small as one dimer wide. Trenches ∼3 nm wide and 2–3 atomic layers deep can be created with less stringent control of patterning parameters. Direct patterning provides a straightforward route to the fabrication of nanoscale test structures under UHV conditions of cleanliness.

scholarly journals Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

2017 ◽  
Vol 8 ◽  
pp. 2389-2395 ◽  
Author(s):  
Sumit Tewari ◽  
Koen M Bastiaans ◽  
Milan P Allan ◽  
Jan M van Ruitenbeek
Keyword(s):  
Atomic Structure ◽  
Scanning Tunneling Microscope ◽  
Critical Role ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Stm Tips

Scanning tunneling microscopes (STM) are used extensively for studying and manipulating matter at the atomic scale. In spite of the critical role of the STM tip, procedures for controlling the atomic-scale shape of STM tips have not been rigorously justified. Here, we present a method for preparing tips in situ while ensuring the crystalline structure and a reproducibly prepared tip structure up to the second atomic layer. We demonstrate a controlled evolution of such tips starting from undefined tip shapes.

Writing and deleting atomic scale structures with the scanning tunneling microscope

1995 ◽  
Vol 254 (1-2) ◽  
pp. 147-152 ◽  
Author(s):  
Th. Schimmel ◽  
R. Kemnitzer ◽  
J. Küppers ◽  
H. Fuchs ◽  
M. Lux-Steiner
Keyword(s):  
Scanning Tunneling Microscope ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Scale Structures

GROWTH OF PERCOLATED Ag NANOSTRUCTURES ON Si(111)-(7 × 7) SURFACES

2011 ◽  
Vol 10 (01n02) ◽  
pp. 123-127
Author(s):  
D. K. GOSWAMI ◽  
A. PAL
Keyword(s):  
Statistical Analysis ◽  
Surface Morphology ◽  
Room Temperature ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Growth Exponent ◽  
Scanning Tunneling ◽  
Scaling Exponent ◽  
Scaling Exponents ◽  
Growth Scaling

Growth of Ag nanostructures on Si (111)-7 × 7 surfaces has been investigated at the atomic scale regime by studying the evolution of nanoscale surface morphology with Ag coverage. Ag growth on Si (111)-7 × 7 surfaces at room temperature showed a strongly preferential height with even atomic layer thick flat top percolated islands. Here we report that the roughness scaling exponent α and growth scaling exponents β associated with such electronic growth mode are determined by statistical analysis of rough surfaces obtained from scanning tunneling micrograph images of Ag nanostructures grown on Si (111)-7 × 7 surfaces. Observed roughness and growth exponent for this system are 0.82±0.02 and 0.45±0.04, respectively.

Resolution in the scanning tunneling microscope

1991 ◽  
Vol 49 ◽  
pp. 488-489
Author(s):  
R. J. Wilson ◽  
D. D. Chambliss ◽  
S. Chiang ◽  
V. M. Hallmark
Keyword(s):  
Scanning Tunneling Microscope ◽  
Fundamental Principle ◽  
Atomic Scale ◽  
Lateral Resolution ◽  
Scanning Tunneling ◽  
Electronic Noise ◽  
Vertical Resolution ◽  
Tunneling Microscopy ◽  
Spatial Profile ◽  
Theoretical Analyses

Scanning tunneling microscopy (STM) has been used for many atomic scale observations of metal and semiconductor surfaces. The fundamental principle of the microscope involves the tunneling of evanescent electrons through a 10Å gap between a sharp tip and a reasonably conductive sample at energies in the eV range. Lateral and vertical resolution are used to define the minimum detectable width and height of observed features. Theoretical analyses first discussed lateral resolution in idealized cases, and recent work includes more general considerations. In all cases it is concluded that lateral resolution in STM depends upon the spatial profile of electronic states of both the sample and tip at energies near the Fermi level. Vertical resolution is typically limited by mechanical and electronic noise.

Scanning tunneling microscopy of polymers: A status report

1989 ◽  
Vol 47 ◽  
pp. 330-331
Author(s):  
P.E. Russell ◽  
I.H. Musselman
Keyword(s):  
High Resolution ◽  
Scanning Tunneling Microscopy ◽  
Sample Surface ◽  
Atomic Scale ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Status Report ◽  
Tunneling Microscopy ◽  
Research Issues ◽  
Wide Range

Scanning tunneling microscopy (STM) has evolved rapidly in the past few years. Major developments have occurred in instrumentation, theory, and in a wide range of applications. In this paper, an overview of the application of STM and related techniques to polymers will be given, followed by a discussion of current research issues and prospects for future developments. The application of STM to polymers can be conveniently divided into the following subject areas: atomic scale imaging of uncoated polymer structures; topographic imaging and metrology of man-made polymer structures; and modification of polymer structures. Since many polymers are poor electrical conductors and hence unsuitable for use as a tunneling electrode, the related atomic force microscopy (AFM) technique which is capable of imaging both conductors and insulators has also been applied to polymers.The STM is well known for its high resolution capabilities in the x, y and z axes (Å in x andy and sub-Å in z). In addition to high resolution capabilities, the STM technique provides true three dimensional information in the constant current mode. In this mode, the STM tip is held at a fixed tunneling current (and a fixed bias voltage) and hence a fixed height above the sample surface while scanning across the sample surface.

MANIPULATION OF ATOMS AND MOLECULES FOR CONSTRUCTION OF NANOSYSTEMS: THE SCANNING TUNNELING MICROSCOPE AS AN OPERATIVE TOOL

2003 ◽  
Vol 02 (04n05) ◽  
pp. 197-218
Author(s):  
K.-F. BRAUN ◽  
F. MORESCO ◽  
K. MORGENSTERN ◽  
S. FÖLSCH ◽  
J. REPP ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Single Molecules ◽  
Short Review ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Nanoscale Structures ◽  
Constant Height ◽  
Functionalized Tips ◽  
Structure Research

Controlled manipulations with scanning tunneling microscope (STM) down to the scale of small molecules and single atoms allow to build molecular and atomic nanosystems, leading to the fascinating possibility of creating manmade structures on atomic scale. Here we present a short review on investigations based on atomic scale manipulation. Upon soft lateral manipulation of adsorbed species, in which only tip/particle forces are used, three different manipulation modes can be discerned: pushing, pulling and sliding. Even the manipulation of strongly bound native substrate atoms is possible. We demonstrate applications as local analytic and synthetic chemistry tools, with important consequences on surface structure research. Vertical manipulation of Xe and CO leads to improved imaging with functionalized tips. With CO deliberately transferred to the tip, we have also succeeded to perform vibrational spectroscopy on single molecules. Furthermore, we describe how we have reproduced a full chemical reaction with single molecules, whereby all basic steps, namely preparation of the reactants, diffusion and association, are induced with the STM tip. Here also field and electron current effects are employed. Finally, we have extended the manipulation techniques to large specially designed molecules by performing lateral manipulation in constant height and realizing the principle of a conformational molecular switch. Artificial nanoscale structures built in atom by atom fashion can serve as quantum laboratories for investigations of various physical properties.

Spin-Polarized Scanning Tunneling Microscopy (SPSTM)

1991 ◽  
Vol 231 ◽  
Author(s):  
R. Wiesendanger ◽  
D. Buergler ◽  
G. Tarrach ◽  
I.V. Shvets ◽  
H.-J. Guentherodt
Keyword(s):  
Scanning Tunneling Microscope ◽  
High Spatial Resolution ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Promising Technique ◽  
Polarized Electrons ◽  
Tunneling Microscope ◽  
Magnetic Structures ◽  
Spin Polarized

AbstractWe report on a novel promising technique for the investigation of magnetic structures at surfaces at high spatial resolution, ultimately down to the atomic scale. This technique is based on the observation of vacuum tunneling of spin-polarized electrons by means of a scanning tunneling microscope (STM). We discuss appropriate probe tips for the spin-polarized STM (SPSTM) and describe initial experimental results. We further focus on the information obtained by SPSTM. Finally, the perspectives of SPSTM will be discussed.

Sign in / Sign up

Export Citation Format

Share Document