Rapid Thermal Chemical Vapor Deposition of Nitrogen-Doped Polysilicon for High-Performance and High-Reliability CMOS Technology

AbstractIn this paper, a detailed study is presented for the growth kinetics of rapid thermal chemical vapor deposition (RTCVD) of nitrogen-doped polysilicon using silane and ammonia chemistry. It is found that nitrogen doping has reduced the surface roughness and grain size of the RTCVD polysilicon film. Both the deposition rate and the incubation time of film growth depend strongly on the ammonia to silane flow ratio. We have proposed a novel structure of NICER (Nitrogen Incorporation into CMOS Gate Electrode by in-situ RTCVD). High performance and highly reliable dual gate CMOS can be formed by combining rapid thermal oxidation (RTO) with RTCVD.

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Doping of boron or nitrogen to multilayered graphene grown on copper by thermal chemical vapor deposition of methane and vapor of phenylboronic acid or melamine

MRS Advances ◽

10.1557/adv.2019.26 ◽

2019 ◽

Vol 4 (3-4) ◽

pp. 211-216 ◽

Cited By ~ 1

Author(s):

Ryoko Furukawa ◽

Yuno Yamamoto ◽

Yoji Nabei ◽

Shunji Bandow

Keyword(s):

Chemical Vapor Deposition ◽

Raman Scattering ◽

Sheet Resistance ◽

Vapor Deposition ◽

Phenylboronic Acid ◽

Chemical Vapor ◽

X Ray ◽

Thermal Chemical Vapor Deposition ◽

Nitrogen Doped ◽

Doped Graphene

AbstractEither boron or nitrogen doped multilayered graphene was prepared by thermal chemical vapor deposition (CVD). Obtained heteroatom doped graphene was examined by Raman scattering, x-ray photo electron spectroscopy (XPS) and temperature dependence of sheet resistance. From the Raman scattering, obvious increase of ID/IG ratio could not be detected by boron doping, while it increased by ∼0.2 or more for nitrogen doped sample. From XPS, doping rates of boron and nitrogen were estimated to be in the range of 5∼12 at% and 1∼2 at%, respectively. XPS also showed that the boron and nitrogen atoms would locate at the doping sites of both graphitic and neighborhood of atomic defect. Magnitude of sheet resistance was decreased by either doping of boron or nitrogen.

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Rapid thermal chemical vapor deposition of in-situ nitrogen-doped poly-silicon for dual gate CMOS

1995 Symposium on VLSI Technology. Digest of Technical Papers ◽

10.1109/vlsit.1995.520887 ◽

2002 ◽

Cited By ~ 1

Author(s):

S.C. Sun ◽

L.S. Wang ◽

F.L. Yeh ◽

C.H. Chen

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Thermal Chemical Vapor Deposition ◽

Nitrogen Doped ◽

Poly Silicon ◽

Dual Gate

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Effective preparation of nitrogen-doped activated carbon by aniline thermal chemical vapor deposition for arsenate adsorption

Environmental Engineering Research ◽

10.4491/eer.2019.217 ◽

2019 ◽

Vol 25 (5) ◽

pp. 707-713 ◽

Cited By ~ 1

Author(s):

Pyunghwa Yoo ◽

Yoshimasa Amano ◽

Motoi Machida

Keyword(s):

Heat Treatment ◽

Activated Carbon ◽

Chemical Vapor Deposition ◽

Adsorption Capacity ◽

Vapor Deposition ◽

Chemical Vapor ◽

Steam Activation ◽

Thermal Chemical Vapor Deposition ◽

Nitrogen Doped ◽

Arsenate Adsorption

Nitrogen-free phenol resin fiber was used to examine the effect of nitrogen-introduction via thermal chemical vapor deposition (CVD) using nitrogen-containing chemicals. In this study, a combination of heat treatment, steam activation, aniline CVD was conducted to prepare the nitrogen-doped activated carbon (AC) and the effective procedure was studied to enhance arsenic adsorption capacity. As a result, consecutive treatment of steam activation as pre-treatment, aniline CVD, steam activation for porous structure, and at least heat treatment was the best processing order for the preparation of ACs. Heat-treated samples demonstrated their robustness against steam activation; therefore heat treatment should be conducted as post treatment for effective CVD process. One of the samples which was prepared by this procedure, 8ST30-8ANL10-8ST50-9.5HT30 (sample #5) showed 0.112 mmol/g of arsenate adsorption capacity, and it was at least 70% higher than that of any other prepared samples. To inspect the high adsorption capacity of this sample, the effect of solution pH, pore structure parameters, elemental analysis, and Boehm titration was conducted comparing with the other prepared samples.

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