Influence of Oxygen on Rapid Thermal Co-Diffusion of Phosphorus and Aluminium in Silicon

1995 ◽  
Vol 387 ◽  
Author(s):  
K. Mahfoud ◽  
B. Hartiti ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Thermal Processing ◽  
Thermal Cycle ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Rapid Thermal Processing ◽  
Device Performance ◽  
Local Motion ◽  
Minority Carrier Diffusion Length ◽  
Device Processing ◽  
Large Enhancement

AbstractLocal motion, diffusion and interaction of impurities in solids are important aspects of semiconductor material and device processing. Rapid thermal processing (RTP) is extremely concerned and appears to offer significant advantages in these areas. As oxygen is one of the dominant impurities present in silicon, various applications require different level of oxygen to improve the device performance.In this work, we have taken the advantage of this feature to study the effects of the oxygen concentration in silicon on the rapid thermal co-diffusion of phosphorus and aluminium. In particular, we will show that the large enhancement of the minority carrier diffusion length (LD) due to this process can be related to the presence of oxygen and carbon which influences during the thermal cycle are of importance.

Influence of Rapid Thermal Processing on Minority Carrier Diffusion Length in Silicon

1989 ◽  
Vol 146 ◽  
Author(s):  
Wolfgang A. Eichammer ◽  
Thuong-QUat Vu ◽  
P. Siffert
Keyword(s):  
Thermal Processing ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Rapid Thermal Processing ◽  
Impurity Content ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Length Measurements ◽  
Recombination Centers

ABSTRACTMinority carrier diffusion length measurements (SPV-method) are presented which illustrate the role of contamination, residual impurity content and surfaces in the formation of RTP-induced recombination centers.

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures

2015 ◽  
Vol 23 (4) ◽  
Author(s):  
T. Piotrowski ◽  
M. Węgrzecki ◽  
M. Stolarski ◽  
T. Krajewski
Keyword(s):  
Spatial Distribution ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Silicon Detector ◽  
Monochromatic Radiation ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Spot Diameter ◽  
Photoelectric Current ◽  
Effective Carrier

AbstractOne of the key parameters determining detection properties of silicon PIN detector structures (pThe paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ

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