Pulsed-Laser Deposition of Titanium Nitride
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AbstractThe pulsed-laser deposition technique has been used to form thin films of TiN on (100)-oriented single crystal substrates of silicon and rocksalt. Using atomic force microscopy, it was revealed that TiN films grown on silicon at substrate temperatures ranging from 50°C to 500°C were extremely smooth—the mean roughness being ~ 0.2 nm. Thin TiN films deposited on freshly cleaved NaCl were found to be epitaxial at substrate temperatures as low as 50°C. Epitaxy in this latter system is believed to be due to the structural similarity between film and substrate and the almost exact 4:3 coincident site lattice.
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2008 ◽
Vol 8
(11)
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pp. 5748-5752
2018 ◽
Vol 9
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pp. 686-692
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2011 ◽
Vol 2011
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pp. 1-6
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2007 ◽
Vol 280-283
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pp. 81-84
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