Transient and Spatial Radiative Properties of Patterned Wafers during Rapid Thermal Processing

1995 ◽  
Vol 389 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis ◽  
Cynthia G. Madras
Keyword(s):  
Heat Transfer ◽  
Heat Source ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temporal Variations ◽  
Radiative Properties ◽  
Wafer Surface ◽  
Patterned Wafers ◽  
Thermal Radiative Properties ◽  
Dynamic Variations

ABSTRACTTemperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.

Transient And Spatial Radiative Properties Of Patterned Wafers During Rapid Thermal Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis ◽  
Cynthia G. Madras
Keyword(s):  
Heat Transfer ◽  
Heat Source ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temporal Variations ◽  
Radiative Properties ◽  
Wafer Surface ◽  
Patterned Wafers ◽  
Thermal Radiative Properties ◽  
Dynamic Variations

AbstractTemperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.

The Role of Thermal Radiative Properties of Semiconductor Wafers in Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
P. J. Timans
Keyword(s):  
Thermal Processing ◽  
Radiation Heat Transfer ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
Radiative Properties ◽  
Thermal Radiative Properties ◽  
Wide Range ◽  
Basic Physics ◽  
Key Issues

AbstractRapid thermal processing (RTP) has become a key technology in the fabrication of advanced semiconductor devices. As RTP becomes the accepted technique for an increasingly wide range of processes in device fabrication, the understanding of the basic physics of radiation heat transfer in RTP systems is also being extended rapidly. This paper illustrates the use of optical models for prediction of the thermal radiative properties of semiconductor wafers. Such calculations can be used to address many of the key issues of interest in RTP, including questions concerning temperature measurement and process repeatability.

The Effect of Multilayer Patterns on Thermal Stress During Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
Jeffrey P. Hebbi ◽  
Klavs F. Jensen
Keyword(s):  
Plastic Deformation ◽  
Thermal Stress ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters ◽  
Radiative Properties ◽  
Stress Fields ◽  
Transport Models ◽  
Patterned Wafers ◽  
Side Illumination

AbstractMultilayer patterns can lead to temperature non-uniformity and undesirable levels of thermal stress in silicon wafers during rapid thermal processing (RTP). Thermal stress can, in turn, cause problems such as photolithography overlay errors and degraded device performance through plastic deformation. In this work, the temperature and stress fields in patterned wafers are simulated using detailed finite-element based reactor transport models coupled with electromagnetic theory for predicting radiative properties of multilayers. The temperature distributions are then used to predict the stress fields in the wafer and the onset of plastic deformation. Results are presented for two generic two-dimensional axi-symmetric reactors employing single and double side illumination. The effect of patterns and processing parameters are explored, and strategies for avoiding pattern induced plastic deformation are evaluated.

Temperature Measurement Issues in Rapid Thermal Processing

1997 ◽  
Vol 470 ◽  
Author(s):  
D. P. DeWitt ◽  
F. Y. Sorrell ◽  
J. K. Elliott
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Radiation Effects ◽  
Temperature Scale ◽  
Rapid Thermal Processing ◽  
Radiative Properties ◽  
Spectral Radiance ◽  
Roughness Effects ◽  
Thermal Radiative Properties ◽  
Stray Radiation

ABSTRACTReliable radiometrie temperature measurement has been a major challenge in making rapid thermal processing (RTP) more widely accepted. In order to meet road map requirements involving temperature uncertainty, uniformity and control, new techniques must be demonstrated and/or existing measurement methods must be substantially improved. Critical aspects of radiometrie methods for temperature measurement are centered about the topics: radiative and optical properties of the wafers including layered systems, surface roughness effects, and reflected irradiation from lamp banks and chamber walls. The systematic method for inferring temperature is rooted in the measurement equation which relates the radiometer output to the exitent spectral radiance from the target which reaches the detector and prescribes the roles that emissivity variability and stray radiation have on the result. An overview is provided on the knowledge base for optical and thermal radiative properties. Methods for reducing emissivity and stray radiation effects are summarized. Calibration procedures necessary to assure that the in-chamber or local temperature scale is traceable to the International Temperature Scale (ITS-90) are discussed. The issues which can impact improved temperature measurement practice are summarized.

Thermal-Radiation Absorption Characteristics of Patterned Wafers During Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis
Keyword(s):  
Thermal Processing ◽  
Radiation Effects ◽  
Spectral Characteristics ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Radiative Properties ◽  
Radiation Absorption ◽  
Transient Effects ◽  
Patterned Wafers ◽  
Absorption Characteristics

ABSTRACTMicroscale radiation effects are responsible for the dependence of absorption and temperature distributions on the geometry of the layering structures and the spectral characteristics of the heat source. The effect of patterned wafers, which may contain several different structures and materials, on the wafer absorption characteristics are investigated for rapid thermal processing. A numerical model to determine the thermal radiative absorptivity of the wafer for different structures and materials is presented for different heating conditions. The resulting transient effects are determined numerically for different rapid thermal processes. The changes in radiative properties for rapid thermal annealing and chemical vapor deposition are investigated for patterned wafers.

Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP

1991 ◽  
Vol 224 ◽  
Author(s):  
C. Schietinger ◽  
B. Adams ◽  
C. Yarling
Keyword(s):  
Optical Fiber ◽  
Measurement Technique ◽  
Thermal Processing ◽  
High Speed ◽  
Rapid Thermal Processing ◽  
Wafer Surface ◽  
Speed Measurement ◽  
Temperature Method ◽  
Emissivity Measurement ◽  
Emissivity Measurements

AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.

An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
Jim D. Whitfield ◽  
Marie E. Burnham ◽  
Charles J. Varker ◽  
Syd.R. Wilson
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
High Energy ◽  
Thermally Grown Oxide ◽  
Silicon On Insulator ◽  
Wafer Surface ◽  
High Dose ◽  
Active Device ◽  
Insulating Layer ◽  
Oxygen Implantation

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

Photon effect on radiative properties of silicon during rapid thermal processing

1997 ◽  
Vol 82 (2) ◽  
pp. 830-835 ◽  
Author(s):  
G. Chen ◽  
T. Borca-Tasciuc ◽  
R. B. Fair
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Radiative Properties

Partial Transparency Effects of Silicon During Rapid Thermal Processing

1998 ◽  
Vol 525 ◽  
Author(s):  
A. R. Abramson ◽  
H. Tadal ◽  
P. Nieva ◽  
P. Zavracky ◽  
I. N. Miaoulis ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Processing ◽  
Multilayer Film ◽  
Rapid Thermal Processing ◽  
Considerable Effect ◽  
Film Structure ◽  
Free Carrier ◽  
Radiative Properties ◽  
Heavily Doped ◽  
Absorption Characteristics

ABSTRACTThe radiative properties of a silicon wafer undergoing Rapid Thermal Processing (RTP) are contingent upon the doping level of the silicon substrate and film structure on the wafer, and fluctuate drastically with temperature and wavelength. For a lightly doped substrate, partial transparency effects must be considered that significantly affect absorption characteristics. Band gap, free carrier, and lattice absorption are the dominant absorption mechanisms and either individually or in concert have considerable effect on the overall absorption coefficient of the silicon wafer. At high doping levels, partial transparency effects dissipate, and the substrate may be considered optically thick. A numerical model has been developed to examine partial transparency effects, and to compare lightly doped (partially transparent) and heavily doped (opaque) silicon wafers with a multilayer film structure during RTP.

Sign in / Sign up

Export Citation Format

Share Document