The Role of Thermal Radiative Properties of Semiconductor Wafers in Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
P. J. Timans
Keyword(s):  
Thermal Processing ◽  
Radiation Heat Transfer ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
Radiative Properties ◽  
Thermal Radiative Properties ◽  
Wide Range ◽  
Basic Physics ◽  
Key Issues

AbstractRapid thermal processing (RTP) has become a key technology in the fabrication of advanced semiconductor devices. As RTP becomes the accepted technique for an increasingly wide range of processes in device fabrication, the understanding of the basic physics of radiation heat transfer in RTP systems is also being extended rapidly. This paper illustrates the use of optical models for prediction of the thermal radiative properties of semiconductor wafers. Such calculations can be used to address many of the key issues of interest in RTP, including questions concerning temperature measurement and process repeatability.

Transient And Spatial Radiative Properties Of Patterned Wafers During Rapid Thermal Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis ◽  
Cynthia G. Madras
Keyword(s):  
Heat Transfer ◽  
Heat Source ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temporal Variations ◽  
Radiative Properties ◽  
Wafer Surface ◽  
Patterned Wafers ◽  
Thermal Radiative Properties ◽  
Dynamic Variations

AbstractTemperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.

Temperature Measurement Issues in Rapid Thermal Processing

1997 ◽  
Vol 470 ◽  
Author(s):  
D. P. DeWitt ◽  
F. Y. Sorrell ◽  
J. K. Elliott
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Radiation Effects ◽  
Temperature Scale ◽  
Rapid Thermal Processing ◽  
Radiative Properties ◽  
Spectral Radiance ◽  
Roughness Effects ◽  
Thermal Radiative Properties ◽  
Stray Radiation

ABSTRACTReliable radiometrie temperature measurement has been a major challenge in making rapid thermal processing (RTP) more widely accepted. In order to meet road map requirements involving temperature uncertainty, uniformity and control, new techniques must be demonstrated and/or existing measurement methods must be substantially improved. Critical aspects of radiometrie methods for temperature measurement are centered about the topics: radiative and optical properties of the wafers including layered systems, surface roughness effects, and reflected irradiation from lamp banks and chamber walls. The systematic method for inferring temperature is rooted in the measurement equation which relates the radiometer output to the exitent spectral radiance from the target which reaches the detector and prescribes the roles that emissivity variability and stray radiation have on the result. An overview is provided on the knowledge base for optical and thermal radiative properties. Methods for reducing emissivity and stray radiation effects are summarized. Calibration procedures necessary to assure that the in-chamber or local temperature scale is traceable to the International Temperature Scale (ITS-90) are discussed. The issues which can impact improved temperature measurement practice are summarized.

Transient and Spatial Radiative Properties of Patterned Wafers during Rapid Thermal Processing

1995 ◽  
Vol 389 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis ◽  
Cynthia G. Madras
Keyword(s):  
Heat Transfer ◽  
Heat Source ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temporal Variations ◽  
Radiative Properties ◽  
Wafer Surface ◽  
Patterned Wafers ◽  
Thermal Radiative Properties ◽  
Dynamic Variations

ABSTRACTTemperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.

Carbon Nanofiber or Carbon Nanotube?—The Role of Hydrogen During Rapid Thermal Processing

2011 ◽  
Vol 3 (4) ◽  
pp. 491-493 ◽  
Author(s):  
Huili Wang ◽  
Sam Zhang ◽  
Soon-Eng Ong ◽  
Jun Guo
Keyword(s):  
Carbon Nanotube ◽  
Thermal Processing ◽  
Carbon Nanofiber ◽  
Rapid Thermal Processing

Diffusion Modeling of the Redistribution of Ion Implanted Impurities

1985 ◽  
Vol 52 ◽  
Author(s):  
Alwin E. Michel
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
Diffusion Modeling ◽  
Enhanced Diffusion ◽  
The Common ◽  
Diffusion Mechanisms ◽  
Silicon Device ◽  
Temperature Furnace ◽  
Ion Implanted

ABSTRACTTransient enhanced diffusion during rapid thermal processing has been reported for most of the common dopants employed for silicon device fabrication. For arsenic a large amount of the available data is fit by a computational model based on accepted diffusion mechanisms. Ion implanted boron on the other hand exhibits anomalous tails and transient motiou. A time dependence of this displacement is demonstrated at lower temperatures. High temperature rapid anneals are shown to reduce some of the anomalous motion observed for low temperature furnace anneals. A model is described that links the electrical activation with the diffusion and describes both the transient diffusion of rapid thermal processing and the large anomalous diffusion reported many years ago for furnace anneals.

Photon effect on radiative properties of silicon during rapid thermal processing

1997 ◽  
Vol 82 (2) ◽  
pp. 830-835 ◽  
Author(s):  
G. Chen ◽  
T. Borca-Tasciuc ◽  
R. B. Fair
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Radiative Properties

Partial Transparency Effects of Silicon During Rapid Thermal Processing

1998 ◽  
Vol 525 ◽  
Author(s):  
A. R. Abramson ◽  
H. Tadal ◽  
P. Nieva ◽  
P. Zavracky ◽  
I. N. Miaoulis ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Processing ◽  
Multilayer Film ◽  
Rapid Thermal Processing ◽  
Considerable Effect ◽  
Film Structure ◽  
Free Carrier ◽  
Radiative Properties ◽  
Heavily Doped ◽  
Absorption Characteristics

ABSTRACTThe radiative properties of a silicon wafer undergoing Rapid Thermal Processing (RTP) are contingent upon the doping level of the silicon substrate and film structure on the wafer, and fluctuate drastically with temperature and wavelength. For a lightly doped substrate, partial transparency effects must be considered that significantly affect absorption characteristics. Band gap, free carrier, and lattice absorption are the dominant absorption mechanisms and either individually or in concert have considerable effect on the overall absorption coefficient of the silicon wafer. At high doping levels, partial transparency effects dissipate, and the substrate may be considered optically thick. A numerical model has been developed to examine partial transparency effects, and to compare lightly doped (partially transparent) and heavily doped (opaque) silicon wafers with a multilayer film structure during RTP.

Role of the carbon source in the transformation of amorphous carbon to graphene during rapid thermal processing

2019 ◽  
Vol 21 (18) ◽  
pp. 9384-9390 ◽  
Author(s):  
Xiaowei Li ◽  
Yong Zhou ◽  
Xiaowei Xu ◽  
Aiying Wang ◽  
Kwang-Ryeol Lee
Keyword(s):  
Carbon Source ◽  
Amorphous Carbon ◽  
Thermal Processing ◽  
Rapid Thermal Processing

A fast transfer-free synthesis of a graphene structure can be successfully achieved by Ni-catalysed transformation of amorphous carbon (a-C) during rapid thermal processing, but the role of the a-C structure in the a-C-to-graphene transformation is still unclear.

Accelerating the Discovery of Multilayer Nanostructures with Analytic Differentiation of the Transfer Matrix Equations

2019 ◽  
Author(s):  
James F. Varner ◽  
Dayanara Wert ◽  
Aya Matari ◽  
Raghad Nofal ◽  
Jonathan Foley
Keyword(s):  
Transfer Matrix ◽  
Radiative Properties ◽  
Light Sources ◽  
Matrix Equations ◽  
Important Class ◽  
Objective Functions ◽  
Multilayer Nanostructures ◽  
Energy Applications ◽  
Thermal Radiative Properties ◽  
Wide Range

<div>Multilayer nanostructures represent an important class of materials with tunable optical and thermal radiative properties that can be leveraged for a wide range of energy applications. We present a theoretical framework for optimizing the geometry of such structures that utilizes gradients of various objective functions that are enabled through analytic differentiation of the transfer matrix equations. We demonstrate the usefulness of this method by applying it to the optimization of structures for incandescent light sources, and the global optimization of anti-reflective solar cell coatings.</div>

Rapid Thermal Processing of III-Nitrides

1997 ◽  
Vol 470 ◽  
Author(s):  
J. Hong ◽  
J. W. Lee ◽  
C. B. Vartuli ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
High Temperature ◽  
Partial Pressure ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
The Other ◽  
High Temperature Annealing ◽  
Surface Protection ◽  
Transient Thermal ◽  
Graphite Susceptor

ABSTRACTTransient thermal processing is employed for implant activation, contact alloying, implant isolation and dehydrogenation during III-nitride device fabrication. We have compared use of InN, AlN and GaN powder as methods for providing a N2 overpressure within a graphite susceptor for high temperature annealing of GaN, InN, A1N and InAlN. The AlN powder provides adequate surface protection to temperatures of ∼1100°C for AlN, > 1050°C for GaN, ∼600°C for InN and ∼800°C for the ternary alloy. While the InN powder provides a higher N2 partial pressure than AlN powder, at temperatures above ∼750°C the evaporation of In is sufficiently high to produce condensation of In droplets on the surfaces of the annealed samples. GaN powder achieved better surface protection than the other two cases.

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