Electronic and Optical Properties of the Group-III Nitrides, their Heterostructures and Alloys

1995 ◽  
Vol 395 ◽  
Author(s):  
Walter R. L. Lambrecht ◽  
Kwiseon Kim ◽  
Sergey N. Rashkeev ◽  
B. Segall
Keyword(s):  
Experimental Data ◽  
Optical Properties ◽  
Vacuum Ultraviolet ◽  
Lattice Mismatch ◽  
Group Iii Nitrides ◽  
Spin Orbit ◽  
Biaxial Strain ◽  
Strain Effects ◽  
Group Iii ◽  
Semiconductor Substrates

ABSTRACTVarious aspects of the electronic structure of the group III nitrides are discussed. The relation between band structures and optical response in the vacuum ultraviolet is analyzed for zincblende and wurtzite GaN and for wurtzite A1N and compared with available experimental data obtained from reflectivity and spectroscopic ellipsometry. The spin-orbit and crystal field splittings of the valence band edges and their relations to exciton fine structure are discussed including substrate induced biaxial strain effects. The band-offsets between the III-nitrides and some relevant semiconductor substrates obtained within the dielectric midgap energy model are presented and strain effects which may alter these values are discussed. The importance of lattice mismatch in bandgap bowing is exemplified by comparing AlxGa1−xN and InxGa1−xN.

scholarly journals Growth of Crack-Free thick AlGaN Layer and its Application to GaN-Based Laser Diode

2000 ◽  
Vol 5 (S1) ◽  
pp. 452-458
Author(s):  
I. Akasaki ◽  
S. Kamiyama ◽  
T. Detchprohm ◽  
T. Takeuchi ◽  
H. Amano
Keyword(s):  
Buffer Layer ◽  
Laser Diode ◽  
Lattice Mismatch ◽  
Molar Fraction ◽  
Vertical Direction ◽  
Thick Layer ◽  
Group Iii Nitrides ◽  
Alloy Layer ◽  
Field Pattern ◽  
Group Iii

In the field of group-III nitrides, hetero-epitaxial growth has been one of the most important key technologies. A thick layer of AlGaN alloy with higher AlN molar fraction is difficult to grow on sapphire substrate, because the alloy layer is easily cracked. It is thought that one cause of generating cracks is a large lattice mismatch between an AlGaN and a GaN, when AlGaN is grown on the underlying GaN layer. We have achieved crack-free Al0.07Ga0.93N layer with the thickness of more than 1μm using underlying Al0.05Ga0.95N layer. The underlying Al0.05Ga0.95N layer was grown directly on sapphire by using the low-temperature-deposited buffer layer (LT-buffer layer). Since a lattice mismatch between the underlying Al0.05Ga0.95N layer and upper Al0.07Ga0.93N layer is relatively small, the generation of cracks is thought to be suppressed. This technology is applied to a GaN-based laser diode structure, in which thick n-Al0.07Ga0.93N cladding layer grown on the Al0.05Ga0.95N layer, improves optical confinement and single-robe far field pattern in vertical direction.

Reflectance spectra of some III–V compounds in the vacuum ultraviolet

1968 ◽  
Vol 46 (16) ◽  
pp. 1769-1774 ◽  
Author(s):  
Sarma S. Vishnubhatla ◽  
John C. Woolley
Keyword(s):  
Experimental Data ◽  
Energy Range ◽  
Photon Energy ◽  
Vacuum Ultraviolet ◽  
Reflectance Spectra ◽  
Photon Energy Range ◽  
Spin Orbit ◽  
Good Agreement

Reflectance spectra in the photon energy range 3.5–7.5 eV have been determined for the compounds GaP, InP, GaAs, InAs, AlSb, GaSb, and InSb, and the positions of the E2, E2 + Δ2, E2 + δ, and four E1′ peaks were observed in most cases. The values of the spin–orbit splittings Δ2, Δ1, ΔL3v, and ΔL3c from the experimental data are found to be in good agreement with the values calculated by Cardona from k∙p analysis.

Mosaicity and electrical and optical properties of group III nitrides

2002 ◽  
Vol 14 (48) ◽  
pp. 13025-13030 ◽  
Author(s):  
N M Shmidt ◽  
A N Besyul kin ◽  
M S Dunaevsky ◽  
A G Kolmakov ◽  
A V Sakharov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Group Iii Nitrides ◽  
Electrical And Optical Properties ◽  
Group Iii

scholarly journals Band parameters and strain effects in ZnO and group-III nitrides

2010 ◽  
Vol 26 (1) ◽  
pp. 014037 ◽  
Author(s):  
Qimin Yan ◽  
Patrick Rinke ◽  
M Winkelnkemper ◽  
A Qteish ◽  
D Bimberg ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Strain Effects ◽  
Group Iii

Growth of Crack-Free Thick AlGaN Layer and its Application to GaN-Based Laser Diode

1999 ◽  
Vol 595 ◽  
Author(s):  
I. Akasaki ◽  
S. Kamiyama ◽  
T. Detchprohm ◽  
T. Takeuchi ◽  
H. Amano
Keyword(s):  
Buffer Layer ◽  
Laser Diode ◽  
Lattice Mismatch ◽  
Molar Fraction ◽  
Vertical Direction ◽  
Thick Layer ◽  
Group Iii Nitrides ◽  
Alloy Layer ◽  
Field Pattern ◽  
Group Iii

AbstractIn the field of group-III nitrides, hetero-epitaxial growth has been one of the most important key technologies. A thick layer of AlGaN alloy with higher AlN molar fraction is difficult to grow on sapphire substrate, because the alloy layer is easily cracked. It is thought that one cause of generating cracks is a large lattice mismatch between an AlGaN and a GaN, when AlGaN is grown on the underlying GaN layer. We have achieved crack-free Al0.07Ga0.93N layer with the thickness of more than 1mm using underlying Al0.05Ga0.95N layer. The underlying Al0.05Ga0.95N layer was grown directly on sapphire by using the lowtemperature-deposited buffer layer (LT-buffer layer). Since a lattice mismatch between the underlying Al0.05Ga0.95N layer and upper Al0.07Ga0.93N layer is relatively small, the generation of cracks is thought to be suppressed. This technology is applied to a GaN-based laser diode structure, in which thick n-Al0.07Ga0.93N cladding layer grown on the Al0.05Ga0.95N layer, improves optical confinement and single-robe far field pattern in vertical direction.

Optical micro-characterization of group-III-nitrides: correlation of structural, electronic and optical properties

2003 ◽  
Vol 0 (6) ◽  
pp. 1795-1815 ◽  
Author(s):  
J. Christen ◽  
T. Riemann ◽  
F. Bertram ◽  
D. Rudloff ◽  
P. Fischer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Group Iii Nitrides ◽  
Electronic And Optical Properties ◽  
Group Iii

EELS Characterization of Electronic Structure in Group III - Nitrides Compared With Synchrotron Ellipsometry Results

1999 ◽  
Vol 5 (S2) ◽  
pp. 692-693
Author(s):  
G. Brockt ◽  
H. Lakner
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Group Iii Nitrides ◽  
Wide Bandgap ◽  
Loss Peak ◽  
Low Loss ◽  
Group Iii ◽  
Specimen Material ◽  
Wide Bandgap Materials

EELS in the low loss region of the spectra (< 50eV) provides information on excitations of outer shell electrons and thus the electronic structure of a specimen material which determines its optical properties. In this work dedicated EELS methods for the experimental acquisition and analysis of spectra are described which give improved information about the electronic structure near the bandgap region at a spatial resolution in the range of nanometers. For this purpose we made use of a cold field emission STEM equipped with a dedicated EELS system. This device provides a subnanometer electron probe and offers an energy resolution of 0.35 eV. Application of suitable deconvolution routines for removal of the zero loss peak extracts information on the closest bandgap region while Kramers-Kronig transformation deduces the dielectric properties from the measured energy loss function. These methods have been applied to characterize the optical properties of wide-bandgap materials for the case of group Ill-nitride compounds which are currently the most promising material for applications on optoelectronic devices working in the blue and ultraviolet spectral range.

The role of gaseous species in group-III nitride growth

1997 ◽  
Vol 2 ◽  
Author(s):  
S. Yu. Karpov ◽  
Yu. N. Makarov ◽  
M. S. Ramm
Keyword(s):  
Defect Formation ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Molecular Nitrogen ◽  
Group Iii Nitrides ◽  
Miscibility Gap ◽  
Gaseous Species ◽  
Group Iii ◽  
Ternary Compounds ◽  
Group Iii Nitride

A quasi-thermodynamic model accounting for kinetics of molecular nitrogen evaporation is applied to simulate the growth of binary and ternary group-III nitrides using atomic group-III elements and molecular ammonia as the sources. The values of the molecular nitrogen evaporation coefficients from the surface of GaN and AlN necessary for the simulation are extracted from experiments on free evaporation of the crystals in vacuum, while for InN only estimates are available. The growth process of AlN and InN is studied by analyzing the composition of the desorbed vapor species that are thought to influence the native defect formation in group-III nitrides. Different channels of desorption from the surfaces of group-III nitrides (related either to group-III atoms or to their hydrides) are compared. Specific features of the growth processes under the metal-rich and N-rich conditions are analyzed. The developed approach is extended to study the growth of the ternary compounds GaInN and AlGaN. The growth rate of ternary compounds versus temperature shows a two-drop behavior corresponding to the rapid increase of the respective group-III atom desorption. The effect is accompanied by a corresponding stepwise change in the solid phase composition. Factors retarding the growth of ternary compounds — the miscibility gap related to internal strain accumulated in the solid phase due to the lattice mismatch of binary constituents, and the extra liquid phase formation during growth — are discussed with respect to GaInN.

scholarly journals Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

2009 ◽  
Vol 95 (12) ◽  
pp. 121111 ◽  
Author(s):  
Qimin Yan ◽  
Patrick Rinke ◽  
Matthias Scheffler ◽  
Chris G. Van de Walle
Keyword(s):  
Group Iii Nitrides ◽  
Strain Effects ◽  
Group Iii

Group III-Nitride Based VCSEL for Applications at the Wavelength of 400nm

2000 ◽  
Vol 639 ◽  
Author(s):  
M. Linnik ◽  
A. Christou
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Lattice Mismatch ◽  
Emission Spectra ◽  
Binary Compound ◽  
Index Of Refraction ◽  
Ternary Alloys ◽  
Cavity Surface ◽  
Multiple Quantum ◽  
Group Iii

ABSTRACTShort wavelength Vertical Cavity Surface Emitting Laser based on the group III nitrides, GaN, AlN, InN, and their ternary alloys is reported. Optical properties such as band gap and index of refraction of the nitride binary compound were calculated based on the fitting of the experimental data and the first principle calculations. The ternary alloy optical properties were determined in the same manner but based on the binary compound data. The active region containing InGaN strained multiple quantum wells is formed between two Distributed Bragg Reflectors. GaInN/AlN material systems are shown to be the most suitable for highly reflective Bragg mirrors with minimized number of layers. LiGaO2 substrate is proposed for GaN growth due to its small lattice mismatch with GaN (about 0.9%) and its ability to provide a good thermal matching between the two materials. We report VCSEL calculations on threshold current and emission spectra.

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