Spin-Dependent Transport in GaN Light Emitting Diodes

ABSTRACTElectrically detected magnetic resonance (EDMR) is used to study recombination processes in two types of gallium nitride light emitting diodes: in m/i/n/n+- and InGaN/AlGaN double-heterostructure devices. In the MIS-diodes, two resonances at g=1.96 and 2.00, corresponding to the effective mass donor and a deep defect are observed at room temperature. At low temperatures, an acceptor-related resonance at g=2.06 is visible as well. After current degradation, the spectra are dominated by the defect resonance, indicating that the creation of this defect is responsible for the decreased electroluminescence efficiency. In the double-heterostrucrure devices, EDMR can only be observed below 60 K showing the g=2.00 defect resonance. The same defect resonance is also observed in conventional electron spin resonance experiments under illumination (light-induced ESR).

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Magnetic Resonance Studies of Recombination Processes in GaN-Based Light Emitting Diodes

MRS Proceedings ◽

10.1557/proc-395-673 ◽

1995 ◽

Vol 395 ◽

Author(s):

W.E. Carlos ◽

E.R. Glaser ◽

T.A. Kennedy ◽

S. Nakamura

Keyword(s):

Magnetic Resonance ◽

Light Emitting Diodes ◽

Green Emission ◽

Light Emitting ◽

Magnetic Resonance Studies ◽

Double Heterostructures ◽

Recombination Processes ◽

Electrically Detected Magnetic Resonance ◽

Deep Donor ◽

Broad Feature

ABSTRACTMagnetic resonance techniques are used to study the recombination processes in GaN-based light emitting diodes (LEDs). Electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AlGaN double heterostructures are presented for blue and green LEDs. In either technique our signals are dominated by a broad feature that we ascribe to a deep Zn-related acceptor. Our ELDMR measurements show that this is associated with the blue or green emission. Our EDMR measurements resolve a second center that is tentatively identified as a deep donor trap.

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Heavy-Atom-Free Room-Temperature Phosphorescent Organic Light-Emitting Diodes Enabled by Excited States Engineering

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c17295 ◽

2021 ◽

Author(s):

Heather F. Higginbotham ◽

Masato Okazaki ◽

Piotr de Silva ◽

Satoshi Minakata ◽

Youhei Takeda ◽

...

Keyword(s):

Excited States ◽

Room Temperature ◽

Light Emitting Diodes ◽

Heavy Atom ◽

Organic Light Emitting Diodes ◽

Light Emitting ◽

Organic Light

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Room Temperature Synthesis of Stable Zirconia‐Coated CsPbBr 3 Nanocrystals for White Light‐Emitting Diodes and Visible Light Communication

Laser & Photonics Review ◽

10.1002/lpor.202100278 ◽

2021 ◽

pp. 2100278

Author(s):

Qionghua Mo ◽

Chen Chen ◽

Wensi Cai ◽

Shuangyi Zhao ◽

Dongdong Yan ◽

...

Keyword(s):

Visible Light ◽

White Light ◽

Room Temperature ◽

Light Emitting Diodes ◽

Visible Light Communication ◽

Temperature Synthesis ◽

Light Emitting ◽

Room Temperature Synthesis ◽

White Light Emitting Diodes

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Perovskite Light‐Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

Advanced Materials ◽

10.1002/adma.202006302 ◽

2021 ◽

Vol 33 (14) ◽

pp. 2006302

Author(s):

Yarong He ◽

Jiaxu Yan ◽

Lei Xu ◽

Bangmin Zhang ◽

Qian Cheng ◽

...

Keyword(s):

Quantum Efficiency ◽

Low Temperatures ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Light Emitting

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Room temperature thermo-electric pumping in mid-infrared light-emitting diodes

Applied Physics Letters ◽

10.1063/1.4828566 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183513 ◽

Cited By ~ 30

Author(s):

Parthiban Santhanam ◽

Duanni Huang ◽

Rajeev J. Ram ◽

Maxim A. Remennyi ◽

Boris A. Matveev

Keyword(s):

Room Temperature ◽

Light Emitting Diodes ◽

Infrared Light ◽

Thermo Electric ◽

Mid Infrared ◽

Light Emitting

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Room-temperature light-emitting diodes with Ge islands

Materials Science in Semiconductor Processing ◽

10.1016/s1369-8001(00)00059-7 ◽

2000 ◽

Vol 3 (5-6) ◽

pp. 383-387 ◽

Cited By ~ 11

Author(s):

L Vescan ◽

O Chretien ◽

T Stoica ◽

E Mateeva ◽

A Mück

Keyword(s):

Room Temperature ◽

Light Emitting Diodes ◽

Light Emitting

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Spin transport in epitaxial Fe3O4/GaAs lateral structured device

Chinese Physics B ◽

10.1088/1674-1056/ac4903 ◽

2022 ◽

Author(s):

Zhaocong Huang ◽

Wenqing Liu ◽

Jian Liang ◽

Qingjie Guo ◽

Ya Zhai ◽

...

Keyword(s):

Data Storage ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Spin Transport ◽

Spintronic Devices ◽

Spin Dependent Transport ◽

Effect Transistor ◽

Dependent Transport ◽

Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

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