Spin transport in epitaxial Fe3O4/GaAs lateral structured device
Keyword(s):
Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.
Keyword(s):
2018 ◽
Vol 10
(44)
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pp. 38280-38286
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Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 6B)
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pp. 4139-4142
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