Mev Ion Beam Synthesis of Well-Defined Buried 3C-Sic Layers in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
J.K.N. Lindner ◽  
B. Götz ◽  
A. Frohnwieser ◽  
B. Stritzker
Keyword(s):  
Electron Diffraction ◽  
Depth Distribution ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Synthesis ◽  
Post Implantation

AbstractWell-defined, homogenous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C+ ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Ion Beam Synthesis of Buried COXNi1-xSi2 Layers in Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
M.F. Wu ◽  
J. De Wachter ◽  
A.-M. Van Bavel ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Ion Beam ◽  
Type A ◽  
Type B ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Unique Distribution ◽  
Buried Layers

ABSTRACTHeteroepitaxial CoxNi1-xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary suicide layer contains 11% type B and 89 % type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

Grazing incident asymmetric X-ray diffraction of β-FeSi2 layers, produced by ion beam synthesis

Vacuum ◽  
2004 ◽  
Vol 76 (2-3) ◽  
pp. 277-280 ◽  
Author(s):  
A. Atanassov ◽  
M. Baleva ◽  
V. Darakchieva ◽  
E. Goranova
Keyword(s):  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Synthesis

Formation of Buried Ternary Silicide Layers in Silicon by Ion Beam Synthesis (IBS)

1992 ◽  
Vol 279 ◽  
Author(s):  
D. Panknin ◽  
E. Wieser ◽  
W. Skorupa ◽  
G. Querner ◽  
H. Vöhse ◽  
...  
Keyword(s):  
Phase Composition ◽  
Depth Distribution ◽  
Ion Beam ◽  
High Dose ◽  
Intermediate Annealing ◽  
Layer System ◽  
Ion Beam Synthesis ◽  
Post Implantation ◽  
High Dose Implantation ◽  
Ternary Silicide

ABSTRACTA buried (Fe1−xCox) Si2 (x < 0.2) layer was formed by two step high dose implantation of Fe and Co into {100}-Si with as well as without intermediate annealing between the implantations. The suicide layer remains semiconducting if the temperature of the post implantation annealing is lower than 850°C. The depth distribution of Fe and Co, the phase composition as well as the microstructure of the layer system was investigated.

X‐ray‐diffraction study of quasipseudomorphic ErSi1.7layers formed by channeled ion‐beam synthesis

1996 ◽  
Vol 80 (10) ◽  
pp. 5713-5717 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomme ◽  
H. Pattyn ◽  
G. Langouche ◽  
Qinqing Yang ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Synthesis

Bimolecular and Monomolecular Lipid Films: Selected Area Electron Diffraction

1969 ◽  
Vol 27 ◽  
pp. 338-339
Author(s):  
Robert M. Glaeser ◽  
David W. Deamer
Keyword(s):  
Electron Diffraction ◽  
Membrane Structure ◽  
Molecular Organization ◽  
Membrane Material ◽  
X Ray Diffraction ◽  
Membrane Systems ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Lipid Films ◽  
Ultimate Objective

In the investigation of the molecular organization of cell membranes it is often supposed that lipid molecules are arranged in a bimolecular film. X-ray diffraction data obtained in a direction perpendicular to the plane of suitably layered membrane systems have generally been interpreted in accord with such a model of the membrane structure. The present studies were begun in order to determine whether selected area electron diffraction would provide a tool of sufficient sensitivity to permit investigation of the degree of intermolecular order within lipid films. The ultimate objective would then be to apply the method to single fragments of cell membrane material in order to obtain data complementary to the transverse data obtainable by x-ray diffraction.

Isomorphous replacement in electron diffraction of wet crystals of rat hemoglobin

1983 ◽  
Vol 41 ◽  
pp. 446-447
Author(s):  
William F. Tivol ◽  
Murray Vernon King ◽  
D. F. Parsons
Keyword(s):  
Electron Diffraction ◽  
Heavy Atom ◽  
Isomorphous Substitution ◽  
X Ray Diffraction ◽  
Salt Solutions ◽  
X Ray ◽  
Isomorphous Replacement ◽  
Structure Factors ◽  
Diffraction Structure ◽  
The Mean

Feasibility of isomorphous substitution in electron diffraction is supported by a calculation of the mean alteration of the electron-diffraction structure factors for hemoglobin crystals caused by substituting two mercury atoms per molecule, following Green, Ingram & Perutz, but with allowance for the proportionality of f to Z3/4 for electron diffraction. This yields a mean net change in F of 12.5%, as contrasted with 22.8% for x-ray diffraction.Use of the hydration chamber in electron diffraction opens prospects for examining many proteins that yield only very thin crystals not suitable for x-ray diffraction. Examination in the wet state avoids treatments that could cause translocation of the heavy-atom labels or distortion of the crystal. Combined with low-fluence techniques, it enables study of the protein in a state as close to native as possible.We have undertaken a study of crystals of rat hemoglobin by electron diffraction in the wet state. Rat hemoglobin offers a certain advantage for hydration-chamber work over other hemoglobins in that it can be crystallized from distilled water instead of salt solutions.

Microstructure and crystal symmetry of Pb2Sr2(Y/Ca)Cu3O9−δ

1990 ◽  
Vol 48 (4) ◽  
pp. 64-65
Author(s):  
Y. P. Lin ◽  
J. S. Xue ◽  
J. E. Greedan
Keyword(s):  
Electron Diffraction ◽  
High Temperature Superconductors ◽  
Carbon Film ◽  
Basic Structure ◽  
Crystal Symmetry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Space Groups ◽  
New Family ◽  
Convergent Beam

A new family of high temperature superconductors based on Pb2Sr2YCu3O9−δ has recently been reported. One method of improving Tc has been to replace Y partially with Ca. Although the basic structure of this type of superconductors is known, the detailed structure is still unclear, and various space groups has been proposed. In our work, crystals of Pb2Sr2YCu3O9−δ with dimensions up to 1 × 1 × 0.25.mm and with Tc of 84 K have been grown and their superconducting properties described. The defects and crystal symmetry have been investigated using electron microscopy performed on crushed crystals supported on a holey carbon film.Electron diffraction confirmed x-ray diffraction results which showed that the crystals are primitive orthorhombic with a=0.5383, b=0.5423 and c=1.5765 nm. Convergent Beam Electron Diffraction (CBED) patterns for the and axes are shown in Figs. 1 and 2 respectively.

Microdomains in BaFeO3-y (0.35 < y < 0.50)

1990 ◽  
Vol 48 (4) ◽  
pp. 780-781
Author(s):  
M. Vallet-Regí ◽  
M. Parras ◽  
J.M. González-Calbet ◽  
J.C. Grenier
Keyword(s):  
Electron Diffraction ◽  
Chemical Analysis ◽  
Monoclinic Phase ◽  
Orthorhombic Phase ◽  
Total Iron ◽  
Zone Axis ◽  
Electron Micrograph ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compositional Variations

BaFeO3-y compositions (0.35<y<0.50) have been investigated by means of electron diffraction and microscopy to resolve contradictory results from powder X-ray diffraction data.The samples were obtained by annealing BaFeO2.56 for 48 h. in the temperature range from 980°C to 1050°C . Total iron and barium in the samples were determined using chemical analysis and gravimetric methods, respectively.In the BaFeO3-y system, according to the electron diffraction and microscopy results, the nonstoichiometry is accommodated in different ways as a function of the composition (y):In the domain between BaFeO2.5+δBaFeO2.54, compositional variations are accommodated through the formation of microdomains. Fig. la shows the ED pattern of the BaFeO2.52 material along thezone axis. The corresponding electron micrograph is seen in Fig. 1b. Several domains corresponding to the monoclinic BaFeO2.50 phase, intergrow with domains of the orthorhombic phase. According to that, the ED pattern of Fig. 1a, can be interpreted as formed by the superposition of three types of diffraction maxima : Very strong spots corresponding to a cubic perovskite, a set of maxima due to the superposition of three domains of the monoclinic phase along [100]m and a series of maxima corresponding to three domains corresponding to the orthorhombic phase along the [100]o.

scholarly journals Dislocation Arrangement in a Thick LEO GaN Film on Sapphire

2000 ◽  
Vol 5 (S1) ◽  
pp. 97-103
Author(s):  
Kathleen A. Dunn ◽  
Susan E. Babcock ◽  
Donald S. Stone ◽  
Richard J. Matyi ◽  
Ling Zhang ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Burgers Vector ◽  
X Ray ◽  
The Third ◽  
Dislocation Arrangement ◽  
Image Position ◽  
Gan Film

Diffraction-contrast TEM, focused probe electron diffraction, and high-resolution X-ray diffraction were used to characterize the dislocation arrangements in a 16µm thick coalesced GaN film grown by MOVPE LEO. As is commonly observed, the threading dislocations that are duplicated from the template above the window bend toward (0001). At the coalescence plane they bend back to lie along [0001] and thread to the surface. In addition, three other sets of dislocations were observed. The first set consists of a wall of parallel dislocations lying in the coalescence plane and nearly parallel to the substrate, with Burgers vector (b) in the (0001) plane. The second set is comprised of rectangular loops with b = 1/3 [110] (perpendicular to the coalescence boundary) which originate in the coalescence boundary and extend laterally into the film on the (100). The third set of dislocations threads laterally through the film along the [100] bar axis with 1/3<110>-type Burgers vectors These sets result in a dislocation density of ∼109 cm−2. High resolution X-ray reciprocal space maps indicate wing tilt of ∼0.5º.

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