Atomic Resolution Ultrahigh Vacuum Scanning Tunneling Microscopy of Diamond (100) Epitaxial Films

1997 ◽  
pp. 59-64
Author(s):  
R. E. Stallcup ◽  
L. M. Villarreal ◽  
A. F. Aviles ◽  
J. M. Perez
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Epitaxial Films ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

STM observation of formation process of carbon nanotube from 6H-SiC (000-1)

2005 ◽  
Vol 901 ◽  
Author(s):  
Takahiro Maruyama ◽  
Yasuyuki Kawamura ◽  
Hyungjin Bang ◽  
Naomi Fujita ◽  
Tomoyuki Shiraiwa ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Scanning Tunneling Microscopy ◽  
Formation Process ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Carbon Networks ◽  
Thermally Treated

AbstractFormation process of nanosized cap structures on a thermally treated 6H-SiC(000-1) substrate was investigated using atomic-resolution ultrahigh-vacuum scanning tunneling microscopy (UHV-STM). After formation of clusters of carobon particles 1-2 nanometer in diameter at 1150°C, these nanoparticles merged, forming nanosized cap structures. Hexagonal carbon networks, partly composed of pentagons, were clearly observed on the surface of the cap structures for a sample annealed above 1200°C. A model for the formation of carbon nanocaps on 6H-SiC(000-1) was proposed.

In Situ Cross-Sectional Scanning Tunneling Microscopy Sample Preparation Technique

1995 ◽  
Vol 399 ◽  
Author(s):  
Y.-C. Kim ◽  
M. J. Nowakowski ◽  
D. N. Seidman
Keyword(s):  
Sample Preparation ◽  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Preparation Technique ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Sample Preparation Technique

ABSTRACTA novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy (XSTM) applications. This technique can be easily adapted to any ultrahigh vacuum (UHV) STM that has a coarse motion capability. A conducting diamond STM tip is used to create micron long scratches on Ge/GaAs or GaAs {001 }-type surfaces. These {001} surfaces are imaged with STM to observe scratch characteristics, and GaAs samples are cleaved to reveal {110}-type faces. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

Quantitative Scanning Tunneling Microscopy at Atomic Resolution: Influence of Forces and Tip Configuration

1996 ◽  
Vol 76 (8) ◽  
pp. 1276-1279 ◽  
Author(s):  
A. R. H. Clarke ◽  
J. B. Pethica ◽  
J. A. Nieminen ◽  
F. Besenbacher ◽  
E. Lægsgaard ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

scholarly journals Layer-by-Layer Pyramid Formation from Low-Energy Ar+ Bombardment and Annealing of Ge (110)

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2521
Author(s):  
Marshall van Zijll ◽  
Samantha S. Spangler ◽  
Andrew R. Kim ◽  
Hazel R. Betz ◽  
Shirley Chiang
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Surface Damage ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
Sample Holder ◽  
Tunneling Microscopy ◽  
Ion Energies ◽  
20 Nm

Isolated pyramids, 30–80 nm wide and 3–20 nm tall, form during sputter-annealing cycles on the Ge (110) surface. Pyramids have four walls with {19 13 1} faceting and a steep mound at the apex. We used scanning tunneling microscopy (STM) under ultrahigh vacuum conditions to periodically image the surface at ion energies between 100 eV and 500 eV and incremental total flux. Pyramids are seen using Ar+ between 200 eV and 400 eV, and require Ag to be present on the sample or sample holder. We suspect that the pyramids are initiated by Ag co-sputtered onto the surface. Growth of pyramids is due to the gathering of step edges with (16 × 2) reconstruction around the pyramid base during layer-by-layer removal of the substrate, and conversion to {19 13 1} faceting. The absence of pyramids using Ar+ energies above 400 eV is likely due to surface damage that is insufficiently annealed.

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