An Ion-Scattering Study of Oxygen Indiffusion During Pulsed Laser Annealing/Cleaning of Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J.F.M. Westendorp ◽  
Z.L. Wang ◽  
F.W. Saris
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Single Pulse ◽  
Solubility Limit ◽  
Dissolution Time ◽  
Ion Scattering ◽  
Solid Solubility Limit ◽  
Pulsed Laser Annealing ◽  
Scattering Study

ABSTRACTOxygen indiffusion during pulsed laser annealing of silicon has been studied using the 186 O(α,α) 186 O resonance at 3.045 MeV. Anneals were carried out with a Q–switched ruby laser, energy density of the pulses 1.5 J/cm2 , pulse width 20 ns. No evidence for oxygen indiffusion was found, neither for ion–implanted single pulse air–annealed silicon nor for a silicon wafer, cleaned with 8 laser shots in a UHV environment. In the latter case, the upper limit of the oxygen concentration was found to be 3.1 * 1018 at/cm3 , which is lower than the solid solubility limit of oxygen in silicon. The non–occurrence of indiffusion is consistent with the dissolution time of SiO2 in Si, which is orders of magnitude longer than the melt duration of the Si–substrate.

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

Formation of Q-carbon by adjusting sp3 content in diamond-like carbon films and laser energy density of pulsed laser annealing

Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 504-511 ◽  
Author(s):  
Hiroki Yoshinaka ◽  
Seiko Inubushi ◽  
Takanori Wakita ◽  
Takayoshi Yokoya ◽  
Yuji Muraoka
Keyword(s):  
Energy Density ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Energy Density ◽  
Diamond Like Carbon ◽  
Pulsed Laser Annealing

Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Wagner ◽  
G. Contreras ◽  
A. Compaan ◽  
M. Cardona ◽  
A. Axmann
Keyword(s):  
Ion Implantation ◽  
Diagnostic Tool ◽  
Laser Annealing ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Solubility Limit ◽  
Equilibrium Solubility ◽  
Photoluminescence Study ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

ABSTRACTIt has been shown previously that dopant concentrations far above the equilibrium solubility limit can be obtained in semiconductors by pulsed laser annealing of heavily ion implanted material. We exploit this fact to study the photoluminescence of germanium with dopant concentrations up to 1021 cm−3. From this study we obtain information on the filling of higher lying band minima and the shift of the optical band gap as a function of carrier concentration over a much wider range than accessible with bulk doped material. In addition it is shown that photoluminescence provides a diagnostic tool to characterize implanted layers.

Surface and Subsurface Morphology of Laser Bean Annealed Auge/Gaaa Ohmic Contacts

1981 ◽  
Vol 4 ◽  
Author(s):  
O. Aina ◽  
J. Norton ◽  
W. Katz ◽  
G. Smith ◽  
K. Rose
Keyword(s):  
Nd:Yag Laser ◽  
Laser Heating ◽  
Ohmic Contacts ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Surface Damage ◽  
Pulsed Laser Annealing ◽  
Heating Model

ABSTRACTA study of the pulsed laser annealing of AuGe films on GaAs using a Nd:YAG laser has revealed differences between the surface and subsurface morfhologies. At laser energy densities lower than 1.1 J/cm2 , the surface retained the smooth, “golden” appearance of deposited AuGe films, while evidence of damage was observed below the surface. At higher energy densities, surface damage was observed. SIMS profiles of Ga and As in the AuGe layer and a laser heating model have been used to explain the presence or absence of damage in terms of the outdiffusion of As and Ga through the laser created melt which leads to the presence or absence of Ga and As at the surface and below the surface.

scholarly journals Laser Induced Defects and Materials Interactions in the V-Si System

1980 ◽  
Vol 1 ◽  
Author(s):  
B. R. Appleton ◽  
B. Stritzker ◽  
C. W. White ◽  
J. Narayan ◽  
J. Fletcher ◽  
...  
Keyword(s):  
Single Crystals ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Rapid Quenching ◽  
Ion Scattering ◽  
Ion Channeling ◽  
Pulsed Laser Annealing ◽  
Composition And Structure ◽  
Induced Defects

ABSTRACTPulsed laser annealing has been evaluated as a technique for fabricating superconducting V3 Si from multilayer V-Si samples, and the nature of laser-induced defects in V3 Si single crystals has been examined. Correlated analyses by ion scattering, ion channeling, Tc measurements and TEM were used to examine the composition and structure of samples subjected to single and multiple laser pulses. It was observed that although the superconducting A15 phase could be formed by pulsed laser mixing, the associated rapid quenching effects introduced defects which were not completely removed by thermal annealing to 925 K for 1 hour. Ion channeling and TEM studies of V3 Si single crystals showed that pulsed laser irradiation caused microcracks to develop in the surface, probably from mechanical stresses induced by thermal gradients.

Pulsed Laser Annealing of Al, Ni, and MgO Containing Nickel Precipitates

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Thermal Stresses ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Dislocation Loops ◽  
Vacancy Loops ◽  
Pulsed Laser Annealing ◽  
Melting Threshold

ABSTRACTWe have investigated the generation of point defects and dislocations, and the formation of dislocation loops as a function of pulse energy density in laser annealed Al, Ni, and MgO containing nickel precipitates. In the case of Al where vacancies are mobile above 200 K, mostly vacancy loops were observed at room temperature in laser melted layers. Dislocations are formed below the laser-melted layers as well as in specimens treated with pulses below the melting threshold, due to thermal stresses. In the case of Ni (where vacancies are mobile above 373 K) the microstructure in room temperature laser annealed specimens consists of primarily dislocations and their tangles. In MgO:Ni crystals, enough laser energy was absorbed to melt nickel precipitates. The dislocation structure around the precipitates and the transformation of nickel precipitates from coherent into incoherent, provided information on melting and crystal growth of these precipitates.

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Optical and electrical correlation effects in ZnO nanostructures: Role of pulsed laser annealing

2021 ◽  
Vol 115 ◽  
pp. 111028
Author(s):  
Hayder J. Al-Asedy ◽  
Shuruq A. Al-khafaji ◽  
S.K. Ghoshal
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Zno Nanostructures ◽  
Correlation Effects ◽  
Pulsed Laser Annealing

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

scholarly journals Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ultrashort Pulsed Laser
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