Epitaxy and Magnetotransport Properties of La0.8Sr0.2MnO3 Films Synthesized by Both Pulsed Laser Deposition and Novel Chemical Routes

1995 ◽  
Vol 401 ◽  
Author(s):  
A. R. Modak ◽  
Kannan M. Krishnan

AbstractLa0.8Sr0.2 MnO3 thin films with different microstructural characteristics were prepared by both pulsed laser deposition and a novel polymeric sol-gel process. For both techniques, polycrystalline films were obtained on Si(100) with a native oxide surface but epitaxial and highly oriented growth could be induced on lattice-matched LaAlO3(100) substrates. Whilst the overall magnetization and magnetoresistance behavior as a function of temperature and applied field were consistent with recent results, i.e. a semiconductor-to-metal transition accompanied by an antiferromagnetic-to-ferromagnetic transformation and large magnetoresistance at the resistance peak temperature, the properties of the films were significantly different depending on the microstructure, epitaxy and polycrystallinity. Detailed microstructural characterization of the films are presented and correlated with their magnetic/magnetotransport properties.

2010 ◽  
Vol 1256 ◽  
Author(s):  
John E Mathis ◽  
Gyula Eres ◽  
Claudia Cantoni ◽  
Kyunghoon Kim ◽  
Hans Christen

AbstractNanorods composed of complex oxides have been synthesized using hydrothermal and sol-gel methods, but pulsed-laser deposition (PLD) provides precise, layer-by-layer control of growth, and is the method of choice for synthesizing complex structures. However, producing complex-oxide nanorods by PLD has proved elusive.Here we report on our efforts to produce nanorods composed of the best-understood complex oxide, strontium titanate (STO). The results suggest it is indeed possible to produce STO nanorods via PLD by using a template of MgO nanorods.


2000 ◽  
Vol 87-89 ◽  
pp. 1087-1089 ◽  
Author(s):  
A Pillonnet ◽  
C Garapon ◽  
C Champeaux ◽  
C Bovier ◽  
H Jaffrezic ◽  
...  

2013 ◽  
Vol 107 ◽  
pp. 299-302 ◽  
Author(s):  
F. Jean ◽  
J.-R. Duclère ◽  
F. Rémondière ◽  
A. Boulle ◽  
S. Députier ◽  
...  

2014 ◽  
Vol 17 (4) ◽  
pp. 257-263
Author(s):  
Saša Zeljković ◽  
Toni Ivas ◽  
Anna Infortuna ◽  
Ludwig J. Gauckler

Ba0.5Sr0.5Co0.8Fe0.2O3 − δ thin films were grown by pulsed laser deposition (PLD) in the temperature range from room temperature (RT) to 1073 K and at oxygen pressures from 6.66 to 39.99 Pa in order to produce dense defect-free thin films. Si with a native oxide layer and MgO were used as the substrate materials. The structure of the thin films was highly dependent on substrate temperature, material and oxygen partial pressure, leading to formation of different microstructures – pores, cracks, columnar and fibrous grains. Cracks and delamination of the thin films were observed in dense layers at higher temperatures, while this was not the case with the columnar thin films. Differences in thermal expansion coefficient, phase transformation and oxygen non-stoichiometry of BSCF are possible explanations for the cracking of the dense thin films. Thin films with a columnar structure are positively influenced by annealing inducing grain growth and densification.


Author(s):  
Mary Ann Calleja ◽  
◽  
Annaliza Amo ◽  
Jessa Jayne Miranda ◽  
Floyd Willis Patricio ◽  
...  

We deposited graphite on silicon (111) and copper foil substrate through femtosecond pulsed laser deposition (fs-PLD). A high purity graphite target was placed inside a vacuum chamber at a base pressure of 10-2mbar. The deposition time was varied for 3 hours, 4 hours and 5 hours. XRD spectra showed a (110) peak indicating an oriented growth for samples deposited on silicon (111) and copper foil substrates. AFM topographical images of the samples deposited on silicon (111) showed flake-like structures. However, samples deposited on copper foil showed the presence of defects and lack of deposited particles.


1996 ◽  
Vol 6 (7) ◽  
pp. 1141 ◽  
Author(s):  
Jan L. Allen ◽  
Maryvonne Hervieu ◽  
Bernard Mercey ◽  
Jean-Fran�ois Harnet ◽  
Bernard Raveau

2014 ◽  
Vol 32 (4) ◽  
pp. 541-546 ◽  
Author(s):  
P. Nagaraju ◽  
Y. Vijayakumar ◽  
D. Phase ◽  
V. Reddy ◽  
M. Ramana Reddy

AbstractMicrostructural properties of Ce1-x GdxO2-δ (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser with energy of 220 mJ. The prepared thin films were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. X-ray diffraction analysis confirmed the polycrystalline nature of the thin films. Crystallite size, strain and dislocation density were calculated. The Raman studies revealed the formation of Ce-O with the systematic variation of peak intensity and full width half maxima depending on concentration of gadolinium dopant. The thickness of the films was estimated using Talystep profiler. The surface roughness was estiamted based on AFM.


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