Properties and Fracture Resistance of Thin Polycrystalline Aluminum Films on Sapphire Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
N. R. Moody ◽  
D. Medlin ◽  
S. Guthrie ◽  
R. Q. Hwang ◽  
K. F. McCarty
Keyword(s):  
Polycrystalline Aluminum ◽  
Plastic Properties ◽  
Aluminum Films ◽  
Sapphire Substrates ◽  
Nominal Thickness ◽  
High Resolution Tem ◽  
Interface Hardness ◽  
Thin Polycrystalline ◽  
Film Substrate ◽  
Single Crystal Sapphire

AbstractWe employed nanoindentation, continuous microscratch testing, and high resolution TEM to determine the effect of structure on the properties and resistance to fracture of thin polycrystalline aluminum films deposited onto single crystal sapphire substrates at 25°C and 250°C. These films had a nominal thickness of 90 nm and a grain size of 160 nm. The elastic and plastic properties were similar for both films. The elastic moduli superimposed, increasing from bulk aluminum values at the surface to sapphire values at the interface. Hardness values also superimposed, but were constant through the film thickness at a value between aluminum and sapphire. In contrast, susceptibility to fracture varied markedly between the films with the 25°C film exhibiting abrupt failure along the film-substrate interface while the 250'C film gave no indication of fracture in the film, along the interface, or in the substrate under the conditions tested.

Electromigration Damage Studied by 1/f Noise

1996 ◽  
Vol 428 ◽  
Author(s):  
K. Dagge
Keyword(s):  
High Resolution ◽  
Spectral Density ◽  
Nucleation And Growth ◽  
Polycrystalline Aluminum ◽  
Noise Component ◽  
Aluminum Films ◽  
Before And After ◽  
Noise Measurements ◽  
Thin Polycrystalline ◽  
Dc Stress

AbstractThin polycrystalline aluminum films were investigated by high-resolution ac noisemeasurements before and after damaging by high direct current. Immediately after the interruption of the dc-stress a transient noise component was observed that was inversely proportional to the square of the frequency f (1/f2 -noise). It was caused by discrete jumps in the resistance presumably due to the relaxation of mechanical stress. The second component of noise was stable and in all cases approximately proportional to 1/f. The spectral density of 1/f-noise showed characteristic discrete steps as a function of damaging time, in contrast to the resistance which increased almost continuously up to the failure of the film. This indicates that nucleation-and-growth processes of mobile defects were observed in the noise measurements. Thus noise measurements might help to understand the microscopic process of electromigration.

Transient creep in free-standing thin polycrystalline aluminum films

2002 ◽  
Vol 92 (9) ◽  
pp. 4968-4975 ◽  
Author(s):  
A. J. Kalkman ◽  
A. H. Verbruggen ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Transient Creep ◽  
Free Standing ◽  
Polycrystalline Aluminum ◽  
Aluminum Films ◽  
Thin Polycrystalline

Elastic wave amplitudes in shock-compressed thin polycrystalline aluminum samples

2009 ◽  
Vol 106 (7) ◽  
pp. 073508 ◽  
Author(s):  
J. M. Winey ◽  
B. M. LaLone ◽  
P. B. Trivedi ◽  
Y. M. Gupta
Keyword(s):  
Elastic Wave ◽  
Polycrystalline Aluminum ◽  
Thin Polycrystalline

Mechanical Behavior of Contact Aluminum Alloy

2001 ◽  
Vol 695 ◽  
Author(s):  
David T. Read ◽  
Yi-Wen Cheng ◽  
J. David McColskey ◽  
Robert R. Keller
Keyword(s):  
Room Temperature ◽  
Tensile Tests ◽  
Polycrystalline Aluminum ◽  
Aluminum Films ◽  
High Temperature Heat Treatment ◽  
Transmission Electron ◽  
Silicon Transistors ◽  
Temperature Heat ◽  
Temperature Heat Treatment ◽  
Contact Metal

ABSTRACTWe report the results of tensile tests of thin films of Al-0.5 % Cu deposited on bare silicon. This material was subjected to the complete CMOS fabrication process, including a high-temperature heat treatment. Contact metal makes the electrical connection between the metal wiring and the silicon transistors in a chip. Room-temperature values of yield strength, ultimate tensile strength, and elongation were all lower than the corresponding values found previously for pure electron-beam-evaporated aluminum films. The strengths and elongation decreased slightly as the specimen temperature was raised from 25 to 150°C. The slopes of the stress-strain curves from unloading-reloading runs were lower than the accepted Young's modulus of bulk polycrystalline aluminum. The results are interpreted with the help of scanning and transmission electron microscopy.

Antiphase inversion domains in lithium cobaltite thin films deposited on single-crystal sapphire substrates

2013 ◽  
Vol 61 (20) ◽  
pp. 7671-7678 ◽  
Author(s):  
S.J. Zheng ◽  
C.A.J. Fisher ◽  
T. Hitosugi ◽  
A. Kumatani ◽  
S. Shiraki ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Sapphire Substrates ◽  
Lithium Cobaltite ◽  
Single Crystal Sapphire

Comparison of the Microstructure of AlN Films Grown by MOCVD and by PLD on Sapphire Substrates

1996 ◽  
Vol 449 ◽  
Author(s):  
Yun-Xin Li ◽  
Lourdes Salamanca-Riba ◽  
V. Talyan ◽  
T. Venkatesan ◽  
C. Wongchigul ◽  
...  
Keyword(s):  
Low Density ◽  
Full Width ◽  
High Crystalline Quality ◽  
Rocking Curve ◽  
X Ray ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Film Substrate ◽  
Microscopy Images

ABSTRACT(0001) aluminium nitride thin films were grown epitaxially on (0001) Sapphire substrates by MOCVD at 1200° C and PLD at 800° C. Both films have the same epitaxial growth relationship: (0001)AlN//(0001)Sap, and the same in-plane relationship which shows a 30° rotation between A1N and Sapphire: [ 12 10]AlN//[0 110]Sap and [10 10]AlN //[ 2110]Sap. The full width at half maximum (FWHM) of x-ray rocking curve of the MOCVD A1N film was 0.16° and PLD A1N film was 0.2°. Films grown by both MOCVD and PLD showed high crystalline quality. HRTEM images showed that these films are single crystalline with very low density of defects.Dislocations in the film parallel to the film / substrate interface were observed in both A1N films. Atomic force microscopy images showed that the MOCVD films have flatter and larger terraces than the PLD films. The PLD technique for A1N growth needs to be improved further. But both films have a surface roughness of approximately 100nm.

Growth of Ni layers on single crystal sapphire substrates

2013 ◽  
Vol 539 ◽  
pp. 96-101 ◽  
Author(s):  
Zsolt Fogarassy ◽  
Gergely Dobrik ◽  
Lajos Károly Varga ◽  
László Péter Biró ◽  
János L. Lábár
Keyword(s):  
Single Crystal ◽  
Sapphire Substrates ◽  
Single Crystal Sapphire

scholarly journals Impurity effects on the adhesion of aluminum films on sapphire substrates

1998 ◽  
Author(s):  
J.A. Schneider ◽  
S.E. Guthrie ◽  
W.M. Clift ◽  
N.R. Moody ◽  
M.D. Kriese
Keyword(s):  
Impurity Effects ◽  
Aluminum Films ◽  
Sapphire Substrates

Equilibrium Shapes of Pb Inclusions at 90° Tilt Grain Boundaries in Al

1996 ◽  
Vol 54 ◽  
pp. 364-365
Author(s):  
E. Johnson ◽  
U. Dahmen ◽  
S.-Q. Xiao ◽  
A. Johansen
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Nearest Neighbor ◽  
Lattice Mismatch ◽  
Equilibrium Shape ◽  
Minimum Energy ◽  
Aluminum Matrix ◽  
Spherical Cap ◽  
Polycrystalline Aluminum ◽  
Aluminum Films

Ion implantation of lead in aluminum leads to spontaneous phase separation and formation of dense distributions of nanosized lead inclusions[1]. The inclusions have fee structure, and despite the large lattice mismatch (aA1 = 0.4048 nm and aPb = 0.495 nm) they grow in parallel-cube topotaxy with the matrix. Their shape is cuboctahedral with larger {111} facets and smaller {100} facets which is the minimum- energy shape for an fee crystal in equilibrium with its vapor, as calculated by considering only nearest neighbor bonds. Implantation of polycrystalline aluminum films is accompanied by preferential nucle- ation and enhanced growth of inclusions in the grain boundaries. In adapting their equilibrium shape, grain boundary inclusions will be subject to a larger number of constraints than inclusions in the bulk matrix. This may result in a variety of morphologies characteristic for different types of grain boundaries.In the present study we have used a well-defined bicrystal geometry to study the morphology and structure of lead grain boundary inclusions in mazed bicrystal aluminum films containing mainly 90°<110> tilt boundaries with fixed misorientation but variable inclination[2]. It was found that the shape, size and orientation of the inclusions in the grain boundaries depend on the inclination, i.e. the orientation of the grain boundary plane. Inclusions were all single crystalline and invariably faceted toward one aluminum grain and more rounded toward the other grain (fig.l). Independent of grain boundary inclination, the faceted side was a section of the cuboctahedral equilibrium shape of inclusions in parallel topotaxy with the bulk aluminum matrix. The rounded side, where the inclusions were rotated by 90° with respect to the aluminum lattice, approximated a spherical cap consisting partly of somewhat flatter segments with complex faceting, illustrating the lack of distinctly flat low-energy facets.

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