Electromigration Damage Studied by 1/f Noise

MRS Proceedings ◽

10.1557/proc-428-147 ◽

1996 ◽

Vol 428 ◽

Cited By ~ 1

Author(s):

K. Dagge

Keyword(s):

High Resolution ◽

Spectral Density ◽

Nucleation And Growth ◽

Polycrystalline Aluminum ◽

Noise Component ◽

Aluminum Films ◽

Before And After ◽

Noise Measurements ◽

Thin Polycrystalline ◽

Dc Stress

AbstractThin polycrystalline aluminum films were investigated by high-resolution ac noisemeasurements before and after damaging by high direct current. Immediately after the interruption of the dc-stress a transient noise component was observed that was inversely proportional to the square of the frequency f (1/f2 -noise). It was caused by discrete jumps in the resistance presumably due to the relaxation of mechanical stress. The second component of noise was stable and in all cases approximately proportional to 1/f. The spectral density of 1/f-noise showed characteristic discrete steps as a function of damaging time, in contrast to the resistance which increased almost continuously up to the failure of the film. This indicates that nucleation-and-growth processes of mobile defects were observed in the noise measurements. Thus noise measurements might help to understand the microscopic process of electromigration.

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Properties and Fracture Resistance of Thin Polycrystalline Aluminum Films on Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-403-145 ◽

1995 ◽

Vol 403 ◽

Cited By ~ 2

Author(s):

N. R. Moody ◽

D. Medlin ◽

S. Guthrie ◽

R. Q. Hwang ◽

K. F. McCarty

Keyword(s):

Polycrystalline Aluminum ◽

Plastic Properties ◽

Aluminum Films ◽

Sapphire Substrates ◽

Nominal Thickness ◽

High Resolution Tem ◽

Interface Hardness ◽

Thin Polycrystalline ◽

Film Substrate ◽

Single Crystal Sapphire

AbstractWe employed nanoindentation, continuous microscratch testing, and high resolution TEM to determine the effect of structure on the properties and resistance to fracture of thin polycrystalline aluminum films deposited onto single crystal sapphire substrates at 25°C and 250°C. These films had a nominal thickness of 90 nm and a grain size of 160 nm. The elastic and plastic properties were similar for both films. The elastic moduli superimposed, increasing from bulk aluminum values at the surface to sapphire values at the interface. Hardness values also superimposed, but were constant through the film thickness at a value between aluminum and sapphire. In contrast, susceptibility to fracture varied markedly between the films with the 25°C film exhibiting abrupt failure along the film-substrate interface while the 250'C film gave no indication of fracture in the film, along the interface, or in the substrate under the conditions tested.

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Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

Journal of Physics Conference Series ◽

10.1088/1742-6596/2119/1/012121 ◽

2021 ◽

Vol 2119 (1) ◽

pp. 012121

Author(s):

I E Merkulova

Keyword(s):

Grain Size ◽

Thermal Annealing ◽

Xrd Analysis ◽

Synthesis Temperature ◽

Sem Images ◽

Polycrystalline Aluminum ◽

Plasma Sputtering ◽

Average Grain Size ◽

Before And After ◽

Thin Polycrystalline

Abstract The thin polycrystalline aluminium films were synthesized on monocrystalline silicon substrates by ion-plasma sputtering. The synthesis was carried out at temperatures of 80 and 160°C and deposition rate of 10 and 110 nm/min. As-deposited films were annealed for 15 h at 550°C. The morphology of aluminium films before and after annealing was obtained using SEM images. The surfaces of as-deposited Al thin films, synthesized at high temperature, were uneven, while for low temperature films they were smooth enough with Al hillocks on the top of the film. After thermal annealing, morphology of the films was changed slightly. XRD patterns were obtained to calculate the average Al grain size of as-deposited and annealed films. The XRD analysis showed that an increase in the synthesis temperature leads to an increase in the average grain size from 50 to 84 nm and that increase in the rate of Al film synthesis leads to an increase in the average grain size from 50 to 63 nm. As the result of annealing, the average grain size increased for all samples and the final meaning was from 78 to 140 nm.

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Transient creep in free-standing thin polycrystalline aluminum films

Journal of Applied Physics ◽

10.1063/1.1509099 ◽

2002 ◽

Vol 92 (9) ◽

pp. 4968-4975 ◽

Cited By ~ 16

Author(s):

A. J. Kalkman ◽

A. H. Verbruggen ◽

G. C. A. M. Janssen ◽

S. Radelaar

Keyword(s):

Transient Creep ◽

Free Standing ◽

Polycrystalline Aluminum ◽

Aluminum Films ◽

Thin Polycrystalline

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Transmission Electron Microscopy Studies of Aluminum Oxidation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118254 ◽

1985 ◽

Vol 43 ◽

pp. 268-269

Author(s):

J.Y. Lee

Keyword(s):

Nucleation And Growth ◽

Ion Milling ◽

Cross Sectional ◽

Polycrystalline Aluminum ◽

Axis Orientation ◽

Temperature Oxidation ◽

Aluminum Oxidation ◽

Transmission Electron ◽

High Resolution Images ◽

Argon Ion

In the oxidation of metals and alloys, microstructural features at the atomic level play an important role in the nucleation and growth of the oxide, but little is known about the atomic mechanisms of high temperature oxidation. The present paper describes current progress on crystallographic aspects of aluminum oxidation. The 99.999% pure, polycrystalline aluminum was chemically polished and oxidized in 1 atm air at either 550°C or 600°C for times from 0.5 hr to 4 weeks. Cross-sectional specimens were prepared by forming a sandwich with epoxy, followed by mechanical polishing and then argon ion milling. High resolution images were recorded in a <110>oxide zone-axis orientation with a JE0L JEM 200CX microscope operated at 200 keV.

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Synchrony of Digestion of SV40 DNA by Exonuclease III Determined by EM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100116991 ◽

1975 ◽

Vol 33 ◽

pp. 674-675

Author(s):

Ray Wu ◽

G. Ruben ◽

B. Siegel ◽

P. Spielman ◽

E. Jay

Keyword(s):

Dark Field ◽

Uranyl Acetate ◽

Enzyme Digestion ◽

Dna Molecules ◽

Exonuclease Iii ◽

Aluminum Films ◽

Double Stranded Dna ◽

Before And After ◽

Exo Iii ◽

Sv40 Dna

A method for determining long nucleotide sequences of double-stranded DNA is being developed. It involves (a) the synchronous digestion of the DNA from the 3' ends with EL coli exonuclease III (Exo III) followed by (b) resynthesis with labeled nucleotides and DNA polymerase. A crucial factor in the success of this method is the degree to which the enzyme digestion proceeds synchronously under proper conditions of incubation (step a). Dark field EM is used to obtain accurate measurements on the lengths and distribution of the DNA molecules before and after digestion with Exo III, while gel electrophoresis is used in parallel to obtain a mean length for these molecules. It is the measurements on a large enough sample of individual molecules by EM that provides the information on how synchronously the digestion proceeds. For length measurements, the DNA molecules were picked up on 20-30 Å thick carbon-aluminum films, using the aqueous Kleinschmidt technique and stained with 7.5 x 10-5M uranyl acetate in 90% ethanol for 3 minutes.

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High-resolution performance tests of nucleation and growth suppression by two kinetic hydrate inhibitors

Chemical Engineering Science ◽

10.1016/j.ces.2021.116776 ◽

2021 ◽

pp. 116776

Author(s):

Mark T.J. Barwood ◽

Peter J. Metaxas ◽

Vincent W.S. Lim ◽

Michael L. Johns ◽

Zachary M. Aman ◽

...

Keyword(s):

High Resolution ◽

Nucleation And Growth ◽

Growth Suppression ◽

Performance Tests

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PTU-151 High Resolution Manometry Profile of Hiatal Hernia in Patients before and after Fundoplication: Abstract PTU-151 Table

Gut ◽

10.1136/gutjnl-2013-304907.241 ◽

2013 ◽

Vol 62 (Suppl 1) ◽

pp. A109.2-A110 ◽

Cited By ~ 1

Author(s):

K Bilnik ◽

E Klimacka-Nawrot ◽

J Kurek ◽

B Blonska-Fajfrowska ◽

A Stadnicki

Keyword(s):

High Resolution ◽

Hiatal Hernia ◽

High Resolution Manometry ◽

Before And After

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Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-160-215 ◽

1989 ◽

Vol 160 ◽

Author(s):

Y.H. Lee ◽

R.P. Burns ◽

J.B. Posthill ◽

K.J. Bachmann

Keyword(s):

Thin Films ◽

High Temperature ◽

High Resolution ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam ◽

Nucleation And Growth ◽

Multilayer Heterostructures ◽

Annealing Experiments ◽

Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

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