Microstructure and Surface Structure Evolution in AlCu Polycrystalline Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Adriana E. Lita ◽  
John E. Sanchez
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Fiber Orientation ◽  
Film Formation ◽  
Deposition Process ◽  
Structure Evolution ◽  
Average Roughness ◽  
Deposition Rates ◽  
Cu Films ◽  
Polycrystalline Thin Films

ABSTRACTThe evolution of crystallographic texture, grain size and surface morphology in magnetron sputter deposited Al-0.5wt.% Cu polycrystalline thin films is reported as a function of film thickness for SiO2 and SiO2/Ti underlayers for several deposition rates. Regardless of the underlayer type, the initial ≈ 10 nm of the Al-Cu films is nearly randomly oriented, with the films developing a (111) out-of-plane texture which increases in strength with thickness during deposition. The AlCu films on sputtered Ti underlayers developed an exact (111) fiber orientation while Al-Cu films on oxide substrates were offset ≈ 5° from exact fiber orientation. Higher deposition rates were found to result in slightly better (111) textured 20 nm AlCu films. The surface morphology of films, determined by Atomic Force Microscopy (AFM), revealed two regimes of average roughness (Rrms) evolution during deposition. Rrms decreased early in the deposition process, followed by a roughening regime where Rrms increased with thickness. These results are discussed in terms of mechanisms such as grain growth, which help to determine microstructure development during film formation from the vapor.

Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
L. H. Walsh ◽  
G. O. Ramseyer ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
K. P. MacWilliams
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Copper Diffusion ◽  
Cu Films ◽  
Polycrystalline Thin Films ◽  
Sample Depth ◽  
Versus Sample ◽  
Sputter Deposited

AbstractAl and AI-1%Si 900 nanometer thin films were deposited on 100 nanometer Cu films on thermally oxidized (100 nanometer) Si wafers. The Al and Cu films were deposited using evaporation techniques, and the Al-1%Si film was sputter deposited. Different thin film samples were heated in vacuum to 175, 250, 330 and 400°C for 1 hour. The various annealed and original samples were compared using surface morphology, as well as composition versus sample depth. Differences between the Al and Al-1%Si samples are discussed.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

scholarly journals Morphology Evolution Of ZnO Thin Films Deposited By Nitrogen Mediated Crystallization Method

2018 ◽  
Vol 159 ◽  
pp. 02031 ◽  
Author(s):  
Iping Suhariadi ◽  
Masaharu Shiratani ◽  
Naho Itagaki
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Nitrogen Flow ◽  
Force Microscopy ◽  
Crystallization Method ◽  
Power Spectral ◽  
Density Analysis ◽  
Skewness And Kurtosis

We study the surface morphology of ZnO thin films deposited by nitrogen mediated crystallization method utilizing atomic force microscopy as a function of nitrogen flow rates. Initially, the surface morphology of ZnO thin film deposited without nitrogen exhibits a bumpy surface with spiky grains where the skewness and kurtosis values were found to be 0.48 and 4.80, respectively. By addition of small amount of nitrogen, the skewness and kurtosis values of the films significantly decrease associated with a flatter topography. Further increase in nitrogen flow rate to 16 sccm has roughened the surface shown mainly by the increase in kurtosis value to be 3.30. These results indicate that the addition of small amount of nitrogen during deposition process has enhanced the adatoms migration on the surface resulting in a superior film with a larger grain size. Two-dimensional power spectral density analysis reveals that all the films have self-affine fractal geometry with total fractal values in the range of 2.14 to above 3.00.

Impact of Deposition Rate on the Structural and Magnetic Properties of Sputtered Ni/Cu Multilayer Thin Films

2017 ◽  
Vol 73 (1) ◽  
pp. 85-90 ◽  
Author(s):  
Ali Karpuz ◽  
Salih Colmekci ◽  
Hakan Kockar ◽  
Hilal Kuru ◽  
Mehmet Uckun
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Deposition Rate ◽  
High Rate ◽  
Cubic Phase ◽  
High Deposition Rate ◽  
Multilayer Thin Films ◽  
Face Centered Cubic ◽  
Deposition Rates ◽  
Cu Films

AbstractThe structural and corresponding magnetic properties of Ni/Cu films sputtered at low and high deposition rates were investigated as there is a limited number of related studies in this field. 5[Ni(10 nm)/Cu(30 nm)] multilayer thin films were deposited using two DC sputtering sources at low (0.02 nm/s) and high (0.10 nm/s) deposition rates of Ni layers. A face centered cubic phase was detected for both films. The surface of the film sputtered at the low deposition rate has a lot of micro-grains distributed uniformly and with sizes from 0.1 to 0.4 μm. Also, it has a vertical acicular morphology. At high deposition rate, the number of micro-grains considerably decreased, and some of their sizes increased up to 1 μm. The surface of the Ni/Cu multilayer deposited at the low rate has a relatively more grainy and rugged structure, whereas the surface of the film deposited at the high rate has a relatively larger lateral size of surface grains with a relatively fine morphology. Saturation magnetisation, Ms, values were 90 and 138 emu/cm3 for deposition rates of 0.02 and 0.10 nm/s, respectively. Remanence, Mr, values were also found to be 48 and 71 emu/cm3 for the low and high deposition rates, respectively. The coercivity, Hc, values were 46 and 65 Oe for the low and high Ni deposition rates, respectively. The changes in the film surfaces provoked the changes in the Hc values. The Ms, Mr, and Hc values of the 5[Ni(10 nm)/Cu(30 nm)] films can be adjusted considering the surface morphologies and film contents caused by the different Ni deposition rates.

Electrical Properties of Pulsed Laser Deposited ZnO Thin Films

2009 ◽  
Vol 67 ◽  
pp. 121-125
Author(s):  
Chattopadhyay Sourav ◽  
Kumar Nath Tapan
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Hall Mobility ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Zno Films ◽  
Visible Absorption ◽  
Substrate Temperatures

Epitaxial Single-crystal ZnO thin films have been grown on c-plane (0001) sapphire by Pulsed Laser Deposition process at different substrate temperatures (300 – 800 °C) with 10-1 mbar oxygen pressure. The thicknesses of the films have been varied by varying number of pulses with a repetition rate of 10 pulse/sec. It is found that the sheet resistivity of ZnO thin films grown on c-plane sapphires are in the order of 10-2 Ω-cm and it increases with increasing substrate temperatures and film thickness. The carrier concentrations and Hall mobility are found to be in the order of 1017 cm-3 and ~195 cm2/V-s, respectively. The Hall mobility slightly decreases with increase of substrate temperature and thickness of the films. It is also found that the ZnO films are structurally uniform and well oriented with perfect wurtzite structure with c/a ratio 5.1. We have also deposited non-epitaxial ZnO films on (100) p-Silicon substrates at the same conditions. From HR FE-SEM micrographs, surface morphology of ZnO films grown at lower substrate temperature are found to be uniform compared to the films grown at higher temperatures showing non-uniformity and misoriented wurtzite structures. However, the surface morphology of ZnO flims grown epitaxially on (0001) sapphire are found to be more uniform and it does not change much with growth temperature. The resistivity of the films grown on p-Silicon at higher temperatures is in the order of 103 Ω-cm whereas films grown at lower substrate temperatures show comparatively lower resistivities (~ 102 Ω-cm). From the recorded UV-Visible absorption spectrum the band gap of the film has been estimated to be 3.38 eV.

Surface morphology and microstructure of zirconia thin films prepared at different deposition rates

2004 ◽  
Author(s):  
Dongping Zhang ◽  
Jianda Shao ◽  
Meiqiong Zhan ◽  
Ming Fang ◽  
Jianbing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Deposition Rates

Structure and Kinetics Study of MOCVD Lead Oxide (PbO) from Lead BIS-Tetramethylheptadionate (Pb(thd)2)

1993 ◽  
Vol 335 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Ching Yi Tsai
Keyword(s):  
Thin Films ◽  
Computer Model ◽  
Rate Constants ◽  
Lead Titanate ◽  
Lead Oxide ◽  
Deposition Process ◽  
Reactive Species ◽  
Kinetics Study ◽  
Deposition Rates ◽  
The Individual

AbstractLead bis-tetramethylheptadionate (Pb(thd)2) is an extremely useful precursor for the preparation of lead-based thin films such as PZT, lead titanate, etc. In this paper, lead oxide was deposited from Pb(thd)2 in a hot-walled CVD reactor using oxygen as a reactive species and diluent gas. XRD and SEM were used to determine the structure of the material deposited by the CVD process. The CVD process consistently produced the monoxide of lead which was found to consist of a mixture of orthorhombic PbO with small tetragonal PbO platelets. TEM was used to determine the orientation of the individual platelets which was found to be consistently normal to the <201> family of zone axes. Deposition rates were determined and simulated using an FEM computer model to determine the rate constants for the overall deposition process.

Comparison of Structural, Electrical and Thermoelectric Properties of Vacuum Evaporated SnTe Films of Varied Thickness

2020 ◽  
Vol 20 (6) ◽  
pp. 3879-3887
Author(s):  
Praveen Tanwar ◽  
A. K. Panwar ◽  
Sukhvir Singh ◽  
A. K. Srivastava
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Surface Morphology ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Electrical Measurements ◽  
Average Roughness ◽  
Thermoelectric Measurements ◽  
Tin Telluride ◽  
Te Material

As a key type of promising thermoelectric (TE) material p-type Tin Telluride (SnTe) vacuum evaporated thin films synthesized at room temperature (RT) on a glass substrate, report a significant enhancement in the figure of merit (ZT) value. The thicknesses of the nanostructured thin films were kept about 145 nm and 275 nm. High-resolution X-ray diffraction (HRXRD) outlines the polycrystalline nature in both thin films. Surface morphology of these films is composed of grains of variable sizes as elucidated by scanning electron microscopy (SEM). This observation is further confirmed by atomic force microscopy (AFM) wherein the average roughness, surface skewness, and surface kurtosis parameters are used to analyze the surface morphology. Local microstructural features and crystalline structure have been confirmed from High-resolution transmission electron microscope (HRTEM) and the selected area electron diffraction (SAED) pattern, respectively. Four probes method was used to determine electrical measurements which confirm that the thin films have semi-metallic nature. Thermoelectric measurements carried out on these films resulted that the figure of merit increases as the thickness of the film increases. The maximum ZT value of ˜1.02 is obtained at room temperature for the thin film of thickness 275 nm.

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