Synthesis of CdSe/ZnS Quantum Dot Composites for Electroluminescent Devices

1996 ◽  
Vol 424 ◽  
Author(s):  
J. Rodriguez-Viejo ◽  
B. O. Dabbousi ◽  
M. G. Bawendi ◽  
K. F. Jensen
Keyword(s):  
Quantum Dot ◽  
Composite Films ◽  
Chemical Vapor ◽  
Visible Spectral Region ◽  
Solution Chemistry ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Electroluminescent Devices ◽  
Large Enhancement ◽  
Combined Solution

Quantum dot composite films, consisting of II-VI nanocrystals imbedded in a ZnS matrix, are candidate phosphor materials for electroluminescent flat panel displays. The optical properties of such composites can be tailored across the visible spectral region by selecting the composition and size of the nanocrystals. We present combined solution chemistry and electrospray organometallic chemical vapor deposition (ES-OMCVD) methods for realizing such composites. Size selected, CdSe quantum dots with an overlayer of ZnS are synthesized in solution. This surface derivatization produces a large enhancement of the photoluminescence efficiency. The quantum dot composites are subsequently formed by introducing the quantum dot solution by electrospray into an OMCVD ZnS thin film process. Photoluminescence and cathodoluminescence properties of the quantum dot composites are reported.

High Performance Thin Film Transistors for Scanner Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Silicon Film

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

Chemical Vapor Deposition and Properties of Amorphous Aluminum Oxide Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Roy G. Gordon ◽  
Keith Kramer ◽  
Xinye Liu
Keyword(s):  
Aluminum Oxide ◽  
Low Cost ◽  
Oxide Films ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Hard Coatings ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
High Electrical Resistivity ◽  
Low Viscosity

AbstractFilms of amorphous aluminum oxide were deposited from vaporized alkylaluminum alkoxide compounds and oxygen. For example, a gaseous mixture of triethyldialuminum tri-sec-butoxide vapor and dry air deposits amorphous aluminum oxide films on substrates heated to temperatures around 400 °C. Transparent, smooth, adherent films of aluminum oxide were formed on silicon, glass and metal substrates. The new precursors display a number of advantages over previously used sources for aluminum oxide. They are non-pyrophoric, low-viscosity, low-cost liquids. High deposition rates, over 0.2 μm/min, were observed. The coatings have high purity, high electrical resistivity and high transparency to light. They are excellent barriers to diffusion of water and of ions, such as sodium. These films are useful in optical coatings, as wear-resistant hard coatings, and as diffusion barriers that protect flat panel displays, computer microcircuits, solar cells and metals from corrosion and degradation by impurities.

Evaluating Alternate Visualization Methods for Microsurgery: 2D and 3D Optical Microscopes and Flat-Panel Displays

2012 ◽  
Author(s):  
Michael Sackllah ◽  
Denny Yu ◽  
Charles Woolley ◽  
Steven Kasten ◽  
Thomas J. Armstrong
Keyword(s):  
Flat Panel Displays ◽  
Flat Panel ◽  
2D And 3D

Two mask step polysilicon TFT technology for flat panel displays

1988 ◽  
Vol 24 (3) ◽  
pp. 156 ◽  
Author(s):  
B. Loisel ◽  
L. Haji ◽  
P. Sangouard ◽  
M. Sarret
Keyword(s):  
Flat Panel Displays ◽  
Flat Panel ◽  
Polysilicon Tft

Efficient organic manganese (II) bromide green-light-emitting diodes enabled by manipulating hole and electron transport layer

2021 ◽  
Author(s):  
Hyunsik Im ◽  
Atanu Jana ◽  
Vijaya Gopalan Sree ◽  
QIANKAI BA ◽  
Seong Chan Cho ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices

Lead-free, non-toxic transition metal-based phosphorescent organic–inorganic hybrid (OIH) compounds are promising for next-generation flat-panel displays and solid-state light-emitting devices. In the present study, we fabricate highly efficient phosphorescent green-light-emitting diodes...

Flexible Piezoelectric Nanogenerators Based on P(VDF-TrFE)/CsPbBr3 Quantum Dot Composite Films

2021 ◽  
Author(s):  
Jiajia Nie ◽  
Laipan Zhu ◽  
Wenchao Zhai ◽  
Andy Berbille ◽  
Linlin Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Composite Films ◽  
Piezoelectric Nanogenerators

scholarly journals Development of IGZO TFTs and their applications to next‐generation flat‐panel displays

2010 ◽  
Vol 11 (4) ◽  
pp. 160-164 ◽  
Author(s):  
Hsing‐Hung Hsieh ◽  
Hsiung‐Hsing Lu ◽  
Hung‐Che Ting ◽  
Ching‐Sang Chuang ◽  
Chia‐Yu Chen ◽  
...  
Keyword(s):  
Flat Panel Displays ◽  
Next Generation ◽  
Flat Panel

Ultra barrier flexible substrates for flat panel displays

Displays ◽  
2001 ◽  
Vol 22 (2) ◽  
pp. 65-69 ◽  
Author(s):  
P.E Burrows ◽  
G.L Graff ◽  
M.E Gross ◽  
P.M Martin ◽  
M.K Shi ◽  
...  
Keyword(s):  
Flexible Substrates ◽  
Flat Panel Displays ◽  
Flat Panel
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