Gas Cluster Ion Beam Processing for ULSI Fabrication

1996 ◽  
Vol 427 ◽  
Author(s):  
I. Yamada ◽  
J. Matsuo
Keyword(s):  
Film Formation ◽  
Ion Beam ◽  
Surface Cleaning ◽  
Cluster Ions ◽  
High Yield ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Substrate Surfaces ◽  
The Impact ◽  
Ulsi Fabrication

AbstractUnique characteristics of gas cluster ion beam bombardment are discussed in terms of ULSI fabrication processes. Cluster ion beams consisting of a few hundreds to thousands of atoms have been generated from various kinds of gas materials. Multi-collisions during the impact of accelerated cluster ions upon the substrate surfaces produce fundamentally low energy bombarding effects in a range of a few eV to hundreds of eV per atom at very high density. These bombarding characteristics can be applied to shallow ion implantation, high yield sputtering and smoothing, surface cleaning and low temperature thin film formation.

Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

2004 ◽  
Vol 829 ◽  
Author(s):  
K. Krishnaswami ◽  
D. B. Fenner ◽  
S. R. Vangala ◽  
C. Santeufemio ◽  
M. Grzesik ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Statistical Analysis ◽  
Ion Beam ◽  
Molecular Beam Epitaxial ◽  
Power Spectral ◽  
Sharp Point ◽  
Roughness Analysis ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Substrate Surfaces

ABSTRACTHigh-quality GaSb substrates with minimal surface roughness and thin, uniform oxide layers are critical for developing low-power, epitaxy-based, electronic and optoelectronic devices. Ion-beam processing techniques of gas-cluster ion beam (GCIB) and bromine ion-beam assisted etching (Br-IBAE) were investigated as to their potential for improving the suitability of substrate surfaces for molecular beam epitaxial (MBE) growth. Statistical analysis of the residual surface roughness provides insight into ion-beam processing and its impact on epitaxial growth. Images of episurfaces grown on chemical mechanical polished (CMP), Br-IBAE, and GCIB finished substrates were obtained using atomic force microscopy (AFM) and these were statistically analyzed to characterize their surface roughness properties. Autocorrelation analysis of the first two types of episurfaces showed a quick loss of correlation within ∼100 nm. The episurface with Br-IBAE also showed isotropic mound roughness with sharp point-like protrusions. The GCIB prepared episurfaces exhibited the formation of uniform step-terrace patterns with monatomic steps and wide terraces as indicated by the strong, long range (>0.5 μm) correlations. Statistical analysis of the GCIB episurfaces showed self-similar random fractal behavior over eight orders of magnitude in the power spectral density (PSD) with a fractal dimension of ∼2.5.

Gas Cluster Ion Beam Technology for Nano-Fabrication

2012 ◽  
Vol 82 ◽  
pp. 1-8
Author(s):  
Noriaki Toyoda ◽  
Isao Yamada
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Local Area ◽  
Industrial Applications ◽  
Ion Beams ◽  
Low Energy ◽  
Cluster Ions ◽  
Nano Fabrication ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

A gas cluster is an aggregate of a few to several thousands of gaseous atoms or molecules, and it can be accelerated to a desired energy after ionization. Since the kinetic energy of an atom in a cluster is equal to the total energy divided by the cluster size, a quite-low-energy ion beam can be realized. Although it is difficult to obtain low-energy monomer ion beams due to the space charge effect, equivalently low-energy ion beams can be realized by using cluster ion beams at relatively high acceleration voltages. Not only the low-energy feature but also the dense energy depositions at a local area are important characteristics of the irradiation by gas cluster ions. All of the impinging energy of a gas cluster ion is deposited at the surface region, and this dense energy deposition is the origin of enhanced sputtering yields, crater formation, shockwave generation, and other non-linear effects. GCIBs are being used for industrial applications where a nano-fabrication process is required. Surface smoothing, shallow doping, low-damage etching, trimming, and thin-film formations are promising applications of GCIBs. In this paper, fundamental irradiation effects of GCIB are discussed from the viewpoint of low-energy irradiation, sputtering, and dense energy depositions. Also, various applications of GCIB for nano-fabrications are explained.

Optical thin film formation by gas-cluster ion beam assisted deposition

1999 ◽  
Author(s):  
H. Katsumata ◽  
J. Matsuo ◽  
T. Nishihara ◽  
T. Tachibana ◽  
K. Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Ion Beam ◽  
Optical Thin Film ◽  
Ion Beam Assisted Deposition ◽  
Cluster Ion ◽  
Thin Film Formation ◽  
Gas Cluster Ion Beam

SiO2 film formation at room temperature by gas cluster ion beam oxidation

1996 ◽  
pp. 83-85
Author(s):  
M. Akizuki ◽  
J. Matsuo ◽  
I. Yamada ◽  
M. Harada ◽  
S. Ogasawara ◽  
...  
Keyword(s):  
Room Temperature ◽  
Film Formation ◽  
Ion Beam ◽  
Sio2 Film ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

Size Dependence of Bombardment Characteristics Produced by Cluster Ion Beams

1997 ◽  
Vol 504 ◽  
Author(s):  
T. Seki ◽  
M. Tanomura ◽  
T. Aoki ◽  
J. Matsuo ◽  
I. Yamada
Keyword(s):  
Ion Beam ◽  
Local Area ◽  
Carbon Cluster ◽  
High Rate ◽  
Cluster Ions ◽  
Scanning Tunneling ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Ion Impact ◽  
The Impact

ABSTRACTCluster ion beam processes provide new surface modification techniques, such as surface smoothing, high rate sputtering and very shallow implantation, because of the unique interactions between cluster and surface atoms. To understand interactions with cluster and surface, Scanning Tunneling Microscope (STM) observations have been done for single impact traces.Highly Oriented Pyrolitic Graphite (HOPG) surfaces were bombarded by carbon cluster ions (Va≤300kV), and large ridges and craters have been observed as a result of single cluster ion impact. The impact site diameters are proportional to the cluster size up to 10 atoms, and increase drastically for cluster sizes above 10. This indicates that non-linear multiple collisions occur only when a local area is bombarded by more than 10 atoms at the same time.

Ultra Shallow Junction Formation by Cluster Ion Implantation

1998 ◽  
Vol 532 ◽  
Author(s):  
Jiro Matsuo ◽  
Takaaki Aoki ◽  
Ken-ichi Goto ◽  
Toshihiro Sugii ◽  
Isao Yamada
Keyword(s):  
Depth Distribution ◽  
Ion Beam ◽  
Beam Current ◽  
Cluster Ions ◽  
Junction Depth ◽  
Junction Formation ◽  
Order Of Magnitude ◽  
Cluster Ion ◽  
Ion Impact ◽  
The Impact

ABSTRACTImplantation of B cluster ions into Si using decaborane (B10H14) has been demonstrated. SIMS measurements show that the depth distribution of boron atoms implanted with a monomer ion is exactly matched by that of boron atoms implanted from decaborane ions, if the cluster ion has an order of magnitude larger acceleration energy. According to the Langmuir-Child equation, two orders of magnitude larger space-charge limited ion beam current is possible when decaborane ions are used. Implanted boron atoms from decaborane ions are electrically activated after annealing. Junction depth of the implanted layer with 3 keV decaborane ions is approximately 20nm after annealing at 900°C. Molecular dynamic caluculations show that implantation efficency of boron monomer ions and decaborane ions are the same. However, the number of displaced silicon atoms per implanted boron atom from a decaborane ion impact is 4 times larger than that by boron monomer impact so that a heavily damaged region is created near the impact zone by decaborane ion penetration.

Hard DLC film formation by gas cluster ion beam assisted deposition

2003 ◽  
Vol 201 (2) ◽  
pp. 405-412 ◽  
Author(s):  
Teruyuki Kitagawa ◽  
Isao Yamada ◽  
Noriaki Toyoda ◽  
Harushige Tsubakino ◽  
Jiro Matsuo ◽  
...  
Keyword(s):  
Film Formation ◽  
Ion Beam ◽  
Dlc Film ◽  
Ion Beam Assisted Deposition ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam
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