Tunneling Current Through MIS Structures With Ultra-Thin Insulators

1996 ◽  
Vol 428 ◽  
Author(s):  
H. Fujioka ◽  
H.-J. Wann ◽  
D.-G. Park ◽  
Y.-C. King ◽  
Y.-F. Chyan ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Tunneling Current ◽  
Silicon Oxynitride ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Minute Amount ◽  
Semiconductor Structures ◽  
Direct Tunneling ◽  
Tunneling Mechanism ◽  
Mis Structures

AbstractLeakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14–30Å) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can te also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

Characterization of Mos Structures with Ultra-Thin Tunneling Oxynitride

1995 ◽  
Vol 405 ◽  
Author(s):  
H. Fujioka ◽  
C. Wann ◽  
D. Park ◽  
C. Hu
Keyword(s):  
Silicon Oxynitride ◽  
Gate Insulator ◽  
Leakage Currents ◽  
Tunneling Mechanism ◽  
Conventional Furnace ◽  
Pure Oxide ◽  
Boron Penetration ◽  
P Type ◽  
Mos Structures

AbstractCharacteristics of ultrathin silicon oxynitride (15–25Å) and its interface with Si have been investigated. Oxynitride films with thickness down to 15Å can be grown reproducibly in a conventional furnace. The leakage currents through these films can be well explained by the direct tunneling mechanism and can be fit by the same equation as that for pure oxide. This result indicates that incorporation of nitrogen atoms does not seriously affect the basic properties of the film and its interface such as the effective mass and the barrier height. A p-type poly gate MOS structure with 22Å oxynitride has also been fabricated successfully without boron penetration even using BF2+ ion implantation and a conventional furnace. Since the leakage current thorough oxynitride with this thickness is acceptable for circuit operation, thickness of the gate insulator in the dual poly-Si process can be scaled down at least to 22Å.

scholarly journals Модуляция заряда германиевых МДП-структур с фторсодержащими диэлектриками

2018 ◽  
Vol 52 (8) ◽  
pp. 939
Author(s):  
М.Б. Шалимова
Keyword(s):  
Rare Earth ◽  
Earth Element ◽  
Negative Charge ◽  
Positive Charge ◽  
Surface States ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Semiconductor Structures ◽  
Mis Devices ◽  
Mis Structures

AbstractAn insulator layer of ErF_3, YF_3, NdF_3, and TmF_3 was formed in n -type Ge-based MIS (metal–insulator–semiconductor) structures. It is shown that no negative effective charge is observed in these Ge MIS structures, while the degradation of electric characteristics and the rise of density of surface states leads to an increase in the positive charge. The positive charge formed at the Ge–rare-earth-element fluoride interface can compensate the negative charge of dangling bonds on the surface of Ge, which is potentially promising for modulation of the charge magnitude and sign in MIS devices based on Ge.

Optical Spectroscopy of the Charge Accumulation Layer in Mis Structures with Polymeric Insulator and Semiconductor Layers

1989 ◽  
Vol 173 ◽  
Author(s):  
J. H. Burroughes ◽  
R. H. Friend
Keyword(s):  
Silicon Dioxide ◽  
Optical Measurements ◽  
Charge Storage ◽  
Electronic Excitations ◽  
Charge Accumulation ◽  
Metal Insulator ◽  
Accumulation Layer ◽  
Precursor Route ◽  
Insulator Layers ◽  
Mis Structures

ABSTRACTMetal-Insulator-Semiconductor (MIS) and MISFET structures constructed with polyacetylene prepared by the Durham precursor route provide convenient systems for the investigation of charge storage and transport in this polymer. The charge accumulation layer is particularly easy to form, and is of particular interest because charge is introduced into the polymer without compensation by chemical dopants. Charge is stored in soliton-like excitations of the chain, and we are able to characterise these from optical measurements of their electronic excitations. We find that the nature of the soliton-like states is very sensitive to the structure of the polyacetylene at the interface between the insulator and polyacetylene, and we report here the properties of devices formed with various organic polymers as the insulator layers which we contrast with those formed with silicon dioxide.

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