scholarly journals Модуляция заряда германиевых МДП-структур с фторсодержащими диэлектриками

2018 ◽  
Vol 52 (8) ◽  
pp. 939
Author(s):  
М.Б. Шалимова
Keyword(s):  
Rare Earth ◽  
Earth Element ◽  
Negative Charge ◽  
Positive Charge ◽  
Surface States ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Semiconductor Structures ◽  
Mis Devices ◽  
Mis Structures

AbstractAn insulator layer of ErF_3, YF_3, NdF_3, and TmF_3 was formed in n -type Ge-based MIS (metal–insulator–semiconductor) structures. It is shown that no negative effective charge is observed in these Ge MIS structures, while the degradation of electric characteristics and the rise of density of surface states leads to an increase in the positive charge. The positive charge formed at the Ge–rare-earth-element fluoride interface can compensate the negative charge of dangling bonds on the surface of Ge, which is potentially promising for modulation of the charge magnitude and sign in MIS devices based on Ge.

scholarly journals Electrophysical characteristics of germanium MIS structures with rare-earth element fluorides

2021 ◽  
Vol 24 (2) ◽  
pp. 68-72
Author(s):  
Natalia V. Sachuk ◽  
Margarita B. Shalimova
Keyword(s):  
Rare Earth ◽  
Electric Fields ◽  
Rare Earth Element ◽  
Earth Element ◽  
Surface States ◽  
Film Structure ◽  
Point Of View ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Mis Structures

The electrical properties of MIS structures with rare-earth element fluorides on germanium substrates were studied to analyze the possibility of using these materials as gate dielectrics of devices. The structures are also studied from the point of view of assessing the degradation of their electrophysical properties under the action of electric fields of ~108 V/m, which act on the dielectric during electroforming, since the MIS structures with rare-earth element fluorides have the property of bistable switching. Studies of the I-V and C-V characteristics show that all structures have approximately the same value of the density of surface states at the rare-earth element / Ge fluoride interface. The leakage currents in the MIS structures with TmF3 and SmF3 film are less than in the MIS structures with NdF3 film of greater thickness. There is also no effect of reducing the current density when using the double film structure CeF3/DyF3. The most promising material with a low leakage current at a fairly high value of the dielectric constant in germanium MIS structures is thin-film samarium fluoride.

Electrical Characterization of Metal Insulator Semiconductor Using ZnO Low Deposition Temperature as Semiconductor Layer

2013 ◽  
Vol 832 ◽  
pp. 270-275 ◽  
Author(s):  
Lyly Nyl Ismail ◽  
Saifullah Ali Harun ◽  
Habibah Zulkefle ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Deposition Temperature ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Semiconductor Layer ◽  
Zno Films ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Low Deposition Temperature ◽  
Mis Structures

We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120°C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

1996 ◽  
Vol 448 ◽  
Author(s):  
D.G. Park ◽  
D. M. Diatezua ◽  
Z. Chen ◽  
S. N. Mohammad ◽  
H. Morkoç
Keyword(s):  
Molecular Beam ◽  
Surface States ◽  
Chemical Vapor ◽  
Conduction Band Edge ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Field Excursion

AbstractWe present characteristics of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques . The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575°C and 625°C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625°C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

Rectifying Behavior and Light Emission from Nickel Oxide MIS Structures

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3341-3347 ◽  
Author(s):  
Kamruzzaman Khan ◽  
Srikanth Itapu ◽  
Daniel G. Georgiev
Keyword(s):  
Carrier Transport ◽  
Reverse Bias ◽  
Light Emission ◽  
Mis Structure ◽  
Metal Insulator ◽  
Turn On ◽  
Current Voltage ◽  
Critical Turn ◽  
Mis Devices ◽  
Mis Structures

ABSTRACTWe have demonstrated the NiO/ZnO based rectifying diode for LED application for substituting GaN for optoelectronics applications. We have systematically studied the current-voltage (I-V) characteristics of NiO based Metal-Insulator-Semiconductor (MIS) devices under forward and reverse bias for its use in LED applications. The results obtained show that the current increases exponentially with the voltage after a critical turn-on-voltage. The mechanism of carrier transport responsible for the rectifying behavior of the MIS structure as well as the light emission is discussed in relation to the experimental results.

scholarly journals Ground-state oxygen holes and the metal–insulator transition in the negative charge-transfer rare-earth nickelates

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Valentina Bisogni ◽  
Sara Catalano ◽  
Robert J. Green ◽  
Marta Gibert ◽  
Raoul Scherwitzl ◽  
...  
Keyword(s):  
Rare Earth ◽  
Charge Transfer ◽  
Ground State ◽  
Negative Charge ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes

2015 ◽  
Vol 1118 ◽  
pp. 270-275 ◽  
Author(s):  
Xian Gao ◽  
Ji Long Tang ◽  
Dan Fang ◽  
Fang Chen ◽  
Shuang Peng Wang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Interface Layer ◽  
Experimental Result ◽  
Electrical Characteristics ◽  
Semiconductor Interface ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

Tunneling Current Through MIS Structures With Ultra-Thin Insulators

1996 ◽  
Vol 428 ◽  
Author(s):  
H. Fujioka ◽  
H.-J. Wann ◽  
D.-G. Park ◽  
Y.-C. King ◽  
Y.-F. Chyan ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Tunneling Current ◽  
Silicon Oxynitride ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Minute Amount ◽  
Semiconductor Structures ◽  
Direct Tunneling ◽  
Tunneling Mechanism ◽  
Mis Structures

AbstractLeakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14–30Å) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can te also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

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