Characterization of Mos Structures with Ultra-Thin Tunneling Oxynitride

1995 ◽  
Vol 405 ◽  
Author(s):  
H. Fujioka ◽  
C. Wann ◽  
D. Park ◽  
C. Hu
Keyword(s):  
Silicon Oxynitride ◽  
Gate Insulator ◽  
Leakage Currents ◽  
Tunneling Mechanism ◽  
Conventional Furnace ◽  
Pure Oxide ◽  
Boron Penetration ◽  
P Type ◽  
Mos Structures

AbstractCharacteristics of ultrathin silicon oxynitride (15–25Å) and its interface with Si have been investigated. Oxynitride films with thickness down to 15Å can be grown reproducibly in a conventional furnace. The leakage currents through these films can be well explained by the direct tunneling mechanism and can be fit by the same equation as that for pure oxide. This result indicates that incorporation of nitrogen atoms does not seriously affect the basic properties of the film and its interface such as the effective mass and the barrier height. A p-type poly gate MOS structure with 22Å oxynitride has also been fabricated successfully without boron penetration even using BF2+ ion implantation and a conventional furnace. Since the leakage current thorough oxynitride with this thickness is acceptable for circuit operation, thickness of the gate insulator in the dual poly-Si process can be scaled down at least to 22Å.

Electrical Characterization of Al2O3 - SiO2 Mos Structures

1999 ◽  
Vol 567 ◽  
Author(s):  
L-Å Ragnarsson ◽  
E. Aderstedt ◽  
P. Lundgren
Keyword(s):  
Electrical Characterization ◽  
Thickness Reduction ◽  
Initial Thickness ◽  
Equivalent Thickness ◽  
Conventional Furnace ◽  
Capacitance Voltage ◽  
Layered Dielectric ◽  
The Impact ◽  
Mos Structures

ABSTRACTA comparative capacitance voltage method is used to investigate the equivalent thickness reduction during post metallization annealing of thermally grown ultrathin (∼15-27 Å) oxides. It is found that a double layered dielectric consisting of a thin Al2O3—SiO2 sandwich is appropriate to describe both the increased capacitance and the nearly unaltered current after anneal. It is further shown that the impact of initial thickness and method of growth — in a conventional furnace or by rapid thermal oxidation — on the equivalent thickness reduction is negligible.

Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric

2005 ◽  
Vol 483-485 ◽  
pp. 709-712 ◽  
Author(s):  
A. Paskaleva ◽  
R.R Ciechonski ◽  
Mikael Syväjärvi ◽  
E. Atanassova ◽  
Rositza Yakimova
Keyword(s):  
Electrical Properties ◽  
Energy Distribution ◽  
Gate Dielectric ◽  
Sublimation Method ◽  
P Type ◽  
Mos Structures

The electrical properties of Al2O3 as a gate dielectric in MOS structures based on n- and p-type 4H-SiC grown by sublimation method have been investigated and compared to the properties of similar structures utilizing SiO2. The electrically active defects in the structures are studied by CV method. The results show that the type as well as spatial and energy distribution of defects in Al2O3/SiC and SiO2/SiC samples are different. The structures with Al2O3 on p-type 4H-SiC demonstrate much better C-V characteristics than the p-type 4H-SiC/SiO2 structures.

Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 685-688 ◽  
Author(s):  
Emanuela Schilirò ◽  
Salvatore di Franco ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Hassan Gargouri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Capacitance Voltage ◽  
Mos Structures ◽  
Thermally Grown

This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films, both with and without the presence of a thin SiO2 layer, thermally grown on the 4H-SiC before ALD. Capacitance-voltage measurements on MOS structures resulted in a higher dielectric constant (ε~8.4) for the Al2O3/SiO2/SiC stack, with respect to that of the Al2O3/SiC sample (ε~ 6.7). Moreover, C<em>urrent density-Electric Field</em> measurements demonstrated a reduction of the leakage current and an improvement of the breakdown behaviour in the presence of the interfacial thermally grown SiO2. Basing on these preliminary results, possible applications of ALD-Al2O3 as gate insulator in 4H-SiC MOSFETs can be envisaged.

scholarly journals Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 699 ◽  
Author(s):  
Thi Tran Anh Tuan ◽  
Dong-Hau Kuo ◽  
Phuong Thao Cao ◽  
Van Sau Nguyen ◽  
Quoc-Phong Pham ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Forward Bias ◽  
Electrical Characterization ◽  
Leakage Currents ◽  
Te Mode ◽  
Current Densities ◽  
P Type ◽  
Gan Film ◽  
Mg Doped

The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

TEM characterization of phosphorus-implanted silicon

1991 ◽  
Vol 49 ◽  
pp. 890-891
Author(s):  
N. David Theodore ◽  
Lynnita Knoch ◽  
Jim Christiansen
Keyword(s):  
Cross Section ◽  
Extended Defects ◽  
Leakage Currents ◽  
Tem Analysis ◽  
Transmission Electron ◽  
P Type ◽  
Primary Ions ◽  
Induced Defects ◽  
Made In

Implantation of dopant-species into silicon can result in the formation of amorphous regions, interfaces and extended defects (in the silicon). The presence of these defects can cause modification of dopant distributions, and the rise of leakage currents in p-n junctions. An understanding of the behavior of implant-induced defects and their effect on dopant-distributions is therefore relevant. Such understanding could lead to better defect and dopant control and therefore to more reliable device performance. In this study, a correlation between dopant distributions and damage in implanted silicon, is investigated.The samples investigated were p-type (14-20 Ω-cm) silicon (100) wafers implanted with phosphorous at 180 kev to a dose of 1x1016 cm-2. The implants were performed at room temperature. Post-implant annealing was performed (by rapid-thermal annealing “RTA“) at 800°C for 15 seconds. SIMS (secondaryion mass-spectrometry) and XTEM (cross-section TEM) analysis were performed on as-implanted and annealed samples. Cross-section TEM specimens were made in the 110 geometry. TEM investigation was performed using a JEOL JEM 200CX transmission electron microscope operating at 200 kV. SIMS analysis was performed using an Atomika A-DIDA quadropole instrument with 8 keV O2+ primary ions.

Tunneling Current Through MIS Structures With Ultra-Thin Insulators

1996 ◽  
Vol 428 ◽  
Author(s):  
H. Fujioka ◽  
H.-J. Wann ◽  
D.-G. Park ◽  
Y.-C. King ◽  
Y.-F. Chyan ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Tunneling Current ◽  
Silicon Oxynitride ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Minute Amount ◽  
Semiconductor Structures ◽  
Direct Tunneling ◽  
Tunneling Mechanism ◽  
Mis Structures

AbstractLeakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14–30Å) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can te also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

scholarly journals Physical modeling of electrical and dielectric properties of high-k ta2o5 based MOS capacitors on silicon

2014 ◽  
Vol 27 (2) ◽  
pp. 259-273 ◽  
Author(s):  
Nenad Novkovski
Keyword(s):  
Dielectric Properties ◽  
Silicon Oxynitride ◽  
Silicon Substrates ◽  
Leakage Currents ◽  
Mos Capacitors ◽  
Metal Gates ◽  
High K ◽  
Electrical And Dielectric Properties ◽  
High K Dielectric ◽  
Mos Structures

In this paper we present an integral physical model for describing electrical and dielectric properties of MOS structures containing dielectric stack composed of a high-k dielectric (with emphasize on pure and doped Ta2O5) and an interfacial silicon dioxide or silicon oxynitride layer. Based on the model, an equivalent circuit of the structure is proposed. Validity of the model was demonstrated for structures containing different metal gates (Al, Au, Pt, W, TiN, Mo) and different Ta2O5 based high-k dielectrics, grown of bare or nitrided silicon substrates. The model describes very well the I-V characteristics of the considered structures, as well as frequency dependence of the capacitance in accumulation. Stress-induced leakage currents are also effectively analyzed by the use of the model.

Sign in / Sign up

Export Citation Format

Share Document