The Investigations of Dielectric Properties of BaTiO3 Thin Films on Polycrystalline Pt Substrates by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
Jin Wook Jang ◽  
Woon Jo Cho ◽  
Taek Sang Hahn ◽  
Sang Sam Choi ◽  
Su Jin Chung
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Room Temperature ◽  
Strong Dependence ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Thickness Dependence ◽  
Grain Sizes

AbstractThickness dependence of ferroelectric and structural properties of BaTiO3 thin films were investigated. Stoichiometric BaTiO3 thin films were prepared by off-axis rf magnetron sputtering on polycrystalline Pt substrates at 700°C. Film thickness range was 2,100–20,000Å. Room temperature permittivity, frequency dependence of permittivity, and D-E hysteresis loops were measured and lattice parameters were determined as a function of the film thickness. It has been found that these properties had the strong dependence on film thickness, which was mainly due to grain sizes of BaTiO3 thin films. The main cause of thickness dependence of dielectric properties was thought to be crystallinity and stresses of thin films which is resulted from changes in grain sizes.

Low Temperature Deposition of Ferromagnetic Ni-Mn-Ga Thin Films From Two Different Targets via rf Magnetron Sputtering

2010 ◽  
Vol 1250 ◽  
Author(s):  
A. C. Lourenço ◽  
F. Figueiras ◽  
S. Das ◽  
J. S. Amaral ◽  
G. N. Kakazei ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Device Fabrication ◽  
Degree Of Crystallinity ◽  
Crystallographic Structure ◽  
Austenitic Phase

AbstractLow temperature (400°C) deposition of ferromagnetic Ni-Mn-Ga thin films is successfully performed via rf magnetron sputtering technique using co-deposition of two targets Ni50Mn50 and Ni50Ga50 on sapphire (0001) and Si (100) substrates. The films are in part amorphous with significant degree of crystallinity. The obtained crystallographic structure is shown to be substrate-dependent. Films on both substrates are ferromagnetic at room temperature (Curie temperature ∼ 332.5K) with well-defined hysteresis loops, low coercivity (∼ 100 Oe) and a saturation magnetization of ∼ 200 emu/cc. At low temperature (5 K), both films show increased magnetization value with wider hysteresis loops having higher coercivity and remanent magnetization. The process is therefore effective in achieving the appropriate thermodynamic conditions to deposit thin films of the Ni-Mn-Ga austenitic phase (highly magnetic at room temperature) at relatively low substrate temperature without the need for post-deposition annealing or further thermal treatment, which is prerequisite for the device fabrication.

Thickness Dependence of Induced Ferroelectricity in Epitaxially Grown Ba0.44Sr0.56TiO3 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Kazuhide Abe ◽  
Shuichi Komatsu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering ◽  
Thickness Dependence ◽  
Thickness Direction ◽  
Deposition Technique ◽  
Bst Films

ABSTRACTBa0.44Sr0.56TiO3 (BST) thin films with various thicknesses were epitaxially grown on Pt/MgO(100) substrates with rf magnetron sputtering. The thickness dependence of lattice constant, D-E hysteresis and dielectric constant were evaluated for the BST films. The lattice constant in the thickness direction is elongated through the thickness range (33 to 221 nm), whereas the ferroelectric and the dielectric properties had strong thickness dependencies. The mechanism of the induced ferroelectricity is discussed in terms of the thickness dependence and deposition technique.

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

Dielectric Properties of Nanocrystalline Barium Titanate Thin Films Deposited by RF Magnetron Sputtering

2003 ◽  
Vol 42 (Part 1, No. 2A) ◽  
pp. 544-548 ◽  
Author(s):  
Chi-Shiung Hsi ◽  
Fu-Yuan Hsiao ◽  
Nan-Chung Wu ◽  
Moo-Chin Wang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Barium Titanate ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering
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