Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy

ABSTRACTThe selective growth of GaN and Al0.2Ga0.8N has been conducted on stripe and circular patterned GaN/A1N/6H-SiC(0001) multilayer substrates. Growth morphologies on stripe patterns changed with the widths of stripes and the flow rate of TEG. No ridge growth was observed along the edges of the stripe patterns, and the (0001) top facets were very smooth. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5μm circular patterns. Field emission measurement of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25V/μm for an emission current of 10.8nA at an anode-to-sample distance of 27μm.

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Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

Journal of Electronic Materials ◽

10.1007/bf02673347 ◽

1990 ◽

Vol 19 (11) ◽

pp. 1313-1317 ◽

Cited By ~ 18

Author(s):

Rong -Ting Huang ◽

Ching -Long Jiang ◽

Ami Appelbaum ◽

Daniel Renner ◽

Stanley W. Zehr

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Selective Growth ◽

Organometallic Vapor Phase Epitaxy ◽

Inp Substrates

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Field Emission of Aluminum Nitride Nanocones Deposited on Titanium Substrate

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.129-131.476 ◽

2010 ◽

Vol 129-131 ◽

pp. 476-481 ◽

Cited By ~ 1

Author(s):

Ye Min Hu ◽

Zheng Hu ◽

Fan Zhang ◽

Ying Li ◽

Ming Yuan Zhu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Aluminum Nitride ◽

Silicon Wafer ◽

Field Emission ◽

Electron Emission ◽

Vapor Deposition ◽

Titanium Substrate ◽

Chemical Vapor ◽

Emission Measurement ◽

Turn On

We report the preparation of quasi-arrays of aluminum nitride nanocones via chemical vapor deposition on nitriding treated titanium substrate at 800 °C through the reaction between AlCl3 vapor and NH3/N2 gas. The field emission measurement exhibits a fine electron emission with the turn-on field of 10.7 V/mm, which is quite smaller than the turn-on field of 41.3 V/μm for aluminum nitride nanocones deposited on silicon wafer in our previous works. The reduction of turn-on field is attributed to the formation of a layer of conductive tiannium nitride on titanium substrate during the nitriding treatment.

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Lateral diffusion of sources during selective growth of Si‐doped GaAs layers by metalorganic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.354912 ◽

1993 ◽

Vol 74 (2) ◽

pp. 1327-1330 ◽

Cited By ~ 6

Author(s):

Naoki Hara ◽

Kazushige Shiina ◽

Tatsuya Ohori ◽

Kazumi Kasai ◽

Junji Komeno

Keyword(s):

Vapor Phase ◽

Lateral Diffusion ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Growth ◽

Si Doped

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Low turn-on voltage field emission triodes with selective growth of carbon nanotubes

IEEE Electron Device Letters ◽

10.1109/55.962648 ◽

2001 ◽

Vol 22 (11) ◽

pp. 516-518 ◽

Cited By ~ 25

Author(s):

K.J. Chen ◽

W.K. Hong ◽

C.P. Lin ◽

K.H. Chen ◽

L.C. Chen ◽

...

Keyword(s):

Carbon Nanotubes ◽

Field Emission ◽

Selective Growth ◽

Turn On

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Field emission enhancement of DLC films using triple-junction type emission structure

MRS Proceedings ◽

10.1557/proc-692-h6.38.1 ◽

2001 ◽

Vol 692 ◽

Author(s):

Namwoong Paik ◽

Michael Martin ◽

Daeil Kim ◽

Sungjin Kim ◽

Steven Kim ◽

...

Keyword(s):

Field Emission ◽

Triple Junction ◽

Ion Beam ◽

Metal Substrate ◽

Negative Ion ◽

Emission Characteristics ◽

Emission Measurement ◽

Turn On ◽

Emission Enhancement ◽

Junction Type

AbstractNegative Electron Affinity (NEA) of Diamond-like-Carbon (DLC) films has made DLC films a favorable candidate for field emission display (FED). It was suggested that triple-junction type structure could enhance the field emission characteristics. A triple junction is defined as the intersection of a semiconductor surface with a metal substrate in vacuum. In this study, field emission enhancement in triple junction type structures was investigated. As a metal substrate 5000 of Mo films were deposited. Then, 3000–4000 of DLC film was deposited as a semiconductor material. Thin film layers were made using a negative ion beam source. After the deposition, using an excimer laser, we removed the DLC layer and made circular shaped triple junction trenches with a diameter of 25–250 μm. The field emission characteristics such as I–V characteristics turn on voltage and emission lifetime data were obtained for a diode type field emission measurement system. Overall results show significantly enhanced performance of field emission characteristics such as uniform emission over patterned area, reduced turn on voltages and longer lifetimes can be achieved.

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Electron Field Emission from Aluminum Nitride

MRS Proceedings ◽

10.1557/proc-468-437 ◽

1997 ◽

Vol 468 ◽

Cited By ~ 6

Author(s):

D. P. Malta ◽

G. G. Fountain ◽

J. B. Posthill ◽

T. P. Humphreys ◽

C. Pettenkofer ◽

...

Keyword(s):

Field Emission ◽

Electron Affinity ◽

High Vacuum ◽

Processing System ◽

Electron Field Emission ◽

Emission Measurement ◽

Air Exposure ◽

Turn On ◽

Aln Film ◽

Electron Field

ABSTRACTAlN has been identified as a candidate material for cold cathode field emitters due to its purported negative electron affinity (NEA) surface. Recent studies by our group on AlN(0001) using angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and scanning electron microscopy (SEM) have indicated that AlN(0001) is a positive electron affinity surface. We have also investigated electron field emission behavior of AlN and pure Al films grown on Si. AlN and Al films were grown by molecular beam epitaxy (MBE) and transported via an ultra-high vacuum (UHV) integrated processing system (IPS) to an electron emission measurement system (EEMS). The reference Al film on Si showed characteristic Fowler-Nordheim behavior with a turn-on field of 120V/μm (defined at 10μA-cm-2) and ∼100μA-cm-2 emission at 140V/μm. The AlN film also showed Fowler-Nordheim behavior with a turn-on field of 60V/μm and ∼10mA-cm-2 at 100V/μm. Air exposure of the AlN film caused a shift in turn-on to 90V/μm and ∼0.1mA-cm-2 at 100V/μm. The I-V behavior of the AlN film is consistent with the ARUPS results on a different AlN sample - both indicating a positive electron affinity AlN surface.

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Alternative Group V Precursors for the Growth of Al-Based III-V Epitaxial Layers by OMVPE

MRS Proceedings ◽

10.1557/proc-282-93 ◽

1992 ◽

Vol 282 ◽

Cited By ~ 2

Author(s):

W. S. Hobson ◽

M. Geva

Keyword(s):

Vapor Phase ◽

Flow Rate ◽

Growth Temperature ◽

Carbon Concentration ◽

Organometallic Vapor Phase Epitaxy ◽

Group V ◽

Oxygen Incorporation ◽

Molar Flow Rate ◽

Lower Oxygen ◽

Lower Oxygen Concentration

ABSTRACTTertiarybutylarsine (TBAs), tris-dimethylaminoarsenic (DMAA), and tertiarybutylphosphine (TBP) were investigated as alternatives to arsine and phosphine for the growth of AlGaAs, AlInAs, and AlInP by organometallic vapor phase epitaxy. The use of TBAs led to a significant reduction in carbon and oxygen incorporation compared to ASH3 for AlGaAs. Increasing the TBAs molar flow rate reduced the oxygen (and carbon) concentration. Lower oxygen concentration was observed in AllnP grown with TBP compared to PH3. Increasing the PH3 molar flow rate decreased the oxygen incorporation in AllnP. The morphology of AllnP improved considerably as the growth temperature was increased from 650°C to 750°C, similar to the case of PH3. AlInAs and AlGaAs layers grown with DMAA exhibited rough morphology, presumably due to oxygen-containing impurities in the DMAA source.

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