Alternative Group V Precursors for the Growth of Al-Based III-V Epitaxial Layers by OMVPE

1992 ◽  
Vol 282 ◽  
Author(s):  
W. S. Hobson ◽  
M. Geva
Keyword(s):  
Vapor Phase ◽  
Flow Rate ◽  
Growth Temperature ◽  
Carbon Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Group V ◽  
Oxygen Incorporation ◽  
Molar Flow Rate ◽  
Lower Oxygen ◽  
Lower Oxygen Concentration

ABSTRACTTertiarybutylarsine (TBAs), tris-dimethylaminoarsenic (DMAA), and tertiarybutylphosphine (TBP) were investigated as alternatives to arsine and phosphine for the growth of AlGaAs, AlInAs, and AlInP by organometallic vapor phase epitaxy. The use of TBAs led to a significant reduction in carbon and oxygen incorporation compared to ASH3 for AlGaAs. Increasing the TBAs molar flow rate reduced the oxygen (and carbon) concentration. Lower oxygen concentration was observed in AllnP grown with TBP compared to PH3. Increasing the PH3 molar flow rate decreased the oxygen incorporation in AllnP. The morphology of AllnP improved considerably as the growth temperature was increased from 650°C to 750°C, similar to the case of PH3. AlInAs and AlGaAs layers grown with DMAA exhibited rough morphology, presumably due to oxygen-containing impurities in the DMAA source.

Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2040-2042 ◽  
Author(s):  
Takashi Kawasaki ◽  
Atsushi Nishikawa ◽  
Naoki Furukawa ◽  
Yoshikazu Terai ◽  
Yasufumi Fujiwara
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

scholarly journals Growth Temperature Dependence of Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy

2010 ◽  
Vol 59 (9) ◽  
pp. 671-674
Author(s):  
Atsushi NISHIKAWA ◽  
Takashi KAWASAKI ◽  
Naoki FURUKAWA ◽  
Yoshikazu TERAI ◽  
Yasufumi FUJIWARA
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Temperature Dependence

Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy

1996 ◽  
Vol 449 ◽  
Author(s):  
O. H. Nam ◽  
M. D. Bremser ◽  
B. L. Ward ◽  
R. J. Nemanich ◽  
R. F. Davis
Keyword(s):  
Field Emission ◽  
Vapor Phase ◽  
Flow Rate ◽  
Selective Growth ◽  
Emission Measurement ◽  
Organometallic Vapor Phase Epitaxy ◽  
Turn On ◽  
Si Doped ◽  
Hexagonal Pyramid ◽  
Sample Distance

ABSTRACTThe selective growth of GaN and Al0.2Ga0.8N has been conducted on stripe and circular patterned GaN/A1N/6H-SiC(0001) multilayer substrates. Growth morphologies on stripe patterns changed with the widths of stripes and the flow rate of TEG. No ridge growth was observed along the edges of the stripe patterns, and the (0001) top facets were very smooth. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5μm circular patterns. Field emission measurement of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25V/μm for an emission current of 10.8nA at an anode-to-sample distance of 27μm.

EL-2 Defect Formation and Carbon Incorporation in GaAs grown by Organometallic Vapor Phase Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
R. Venkatasubramanian ◽  
J.M. Borrego ◽  
S.K. Ghandhi
Keyword(s):  
Partial Pressure ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Defect Formation ◽  
Deep Level ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Surface Species ◽  
Phase Loss

AbstractThe anti-site defect AsGa, EL-2, is used to understand the nature of arsenic surface species during the Organometallic Vapor Phase Epitaxy(OMVPE) of GaAs. The concentration of EL-2 in unintentionally doped n-GaAs, measured by Deep Level Transient Spectroscopy, is presented as a function of AsH3 partial pressure, TMGa partial pressure and the growth temperature. Based on this data, a model for EL-2 incorporation in OMVPE GaAs is developed in which all surface species As-H, are converted to As2 at around 765 ° C. Under the same set of growth conditions, relative carbon levels measured by 4K Photoluminescence, suggest that the increase in carbon levels with growth temperature is due to the gas-phase loss of H radical from the As-H species.

OMVPE of InAlAs Using Alternative Al and As Precursors

2014 ◽  
Vol 1635 ◽  
pp. 63-68
Author(s):  
Brittany L. Smith ◽  
Nichole M. Hoven ◽  
Glen Hillier ◽  
Seth M. Hubbard ◽  
David V. Forbes
Keyword(s):  
Mass Spectrometry ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Oxygen Impurity ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Quality ◽  
Secondary Ion ◽  
Aluminum Precursors

ABSTRACTAlternate aluminum and arsenic precursors were investigated for InAlAs grown by organometallic vapor phase epitaxy (OMVPE). The quality of the InAlAs growths was investigated by secondary-ion mass spectrometry (SIMS) to measure impurity concentrations. Trends are extracted from SIMS measurements for each precursor as a function of V/III ratio and growth temperature. Two arsenic precursors, arsine and tertiarybutylarsine (TBAs), were chosen to compare InAlAs growth quality. The impurity concentrations measured by SIMS decrease as the V/III ratio increases, for both arsine and TBAs growths. Impurities also decrease as growth temperature increases. Two aluminum precursors, trimethylaluminum (TMAl) and tritertiarybutylaluminum (TTBAl), were used to compare the effect of alumimum precursor on carbon and oxygen impurity levels. TMAl is widely studied in literature, though TTBAl is less common. This study represents the first report using the TTBAl precursor for InAlAs growth. Each aluminum source is used in conjunction with each aforementioned arsenic precursor in order to compare all possible precursor combinations. TMAl growths demonstrated decreasing impurities with increasing V/III ratio. TTBAl growths did not exhibit such a dependence, impurity concentrations remained virtually constant regardless of V/III ratio.

Surfactant Effects on Ordering in GaInP Grown by Omvpe

1999 ◽  
Vol 583 ◽  
Author(s):  
G. B. Stringfellow ◽  
C. M. Fetzer ◽  
R. T. Lee ◽  
S. W. Jun ◽  
J. K. Shurtleff
Keyword(s):  
Vapor Phase ◽  
Marked Change ◽  
Vapor Phase Epitaxy ◽  
Bandgap Energy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Semiconductor Alloys ◽  
Group V ◽  
Organometallic Precursors ◽  
Surfactant Effects ◽  
Degree Of Order

AbstractCuPt ordering in III/V semiconductor alloys is significant because of the dependence of bandgap energy on degree of order. This paper presents the effects of surfactants isoelectronic with P on ordering in GaInP grown by organometallic vapor phase epitaxy. Each of the three surfactants studied, As, Sb, and Bi, is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. The amount of surfactant required in the vapor phase (as the organometallic precursors TMAs, TESb, and TMBi) increases as the volatility of the group V element increases. Thus, the amount of TEAs required to produce disordered GaInP is approximately two orders of magnitude greater than for TMBi.For Sb, the disordering is shown to be caused by a replacement of [110 ] P dimers on the nominally (001) surface by Sb dimers with the same orientation. For Bi, a marked change in the step structure coincides with the loss of order. For singular (001) substrates, island formation is suppressed by Bi.

Coherent Anti-Stokes Raman Scattering Measurements of Group V Hydride and Trimethylgallium Decomposition in Organometallic Vapor Phase Epitaxy

1988 ◽  
Vol 131 ◽  
Author(s):  
R. Löckerath ◽  
H. J. Koss ◽  
P. Tommack ◽  
W. Richter ◽  
P. Balk
Keyword(s):  
Thermal Decomposition ◽  
Raman Scattering ◽  
Vapor Phase ◽  
Gaas Surface ◽  
Organometallic Vapor Phase Epitaxy ◽  
Experimental Conditions ◽  
Group V ◽  
Scattering Measurements ◽  
Trimethyl Gallium ◽  
Anti Stokes

ABSTRACTThe thermal decomposition of AsH3 and TMG is measured insitu under different experimental conditions. Simultaneously the production of H2, CH4 and C2H6 is observed. The data indicate a situation where AsH3 is only partially decomposed at the GaAs surface. The hydrogen released removes additional CH3 groups from the trimethyl-gallium (TMG) molecule, enhances the decomposition of TMG, and thereby forms methane.

Oxygen incorporation, photoluminescence, and laser performance of AlGaAs grown by organometallic vapor phase epitaxy

1995 ◽  
Vol 24 (11) ◽  
pp. 1687-1690 ◽  
Author(s):  
B. D. Schwartz ◽  
R. S. Setzko ◽  
J. S. Mott ◽  
S. H. MacOmber ◽  
J. J. Powers
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Laser Performance ◽  
Oxygen Incorporation

Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy

1991 ◽  
Vol 59 (12) ◽  
pp. 1446-1448 ◽  
Author(s):  
Z. M. Fang ◽  
K. Y. Ma ◽  
R. M. Cohen ◽  
G. B. Stringfellow
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

High-Conductance GaAs Tunnel Diodes by OMVPE

1991 ◽  
Vol 222 ◽  
Author(s):  
R. Venkatasubramanian ◽  
M. L. Timmons ◽  
T. S. Colpitts
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Atmospheric Pressure ◽  
Gaas Layer ◽  
Tunnel Diode ◽  
Organometallic Vapor Phase Epitaxy ◽  
Tunnel Diodes ◽  
Peak Current ◽  
Si Doping ◽  
High Conductance

ABSTRACTGaAs p+-n+ tunnel diodes have been grown by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE) using zinc as the dopant for the p+ regions and either Se or Si as the dopant for the n+ regions. At a growth temperature of 700° C, using a “cycled” growth for just the Zn-doped p++-GaAs layer both the conductance and the peak current of the tunnel diode has been increased by a factor of ˜65. The conductance of the tunnel diode, maximized at a growth temperature of 650 °C with the cycled growth, is comparable to the best reported values by MBE. Cycled growths for n+ Se-doped regions reduce the tunnel-diode conductance by more than two orders of magnitude. However, the cycled growth for n+-GaAs regions formed with Si doping shows no conductance degradation. A model for these observations is presented.

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