Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy

1996 ◽  
Vol 449 ◽  
Author(s):  
S. A. Safvi ◽  
N. R. Perkins ◽  
M. N. Horton ◽  
T. F. Kuech
Keyword(s):  
Gas Phase ◽  
Vapor Phase ◽  
Growth Parameters ◽  
Ammonia Concentration ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Group V ◽  
Group Iii

ABSTRACTThe effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated in a horizontal Gallium Nitride vapor phase epitaxy reactor. To better understand the effects of these parameters, numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and may be responsible for inferior crystal quality. A low ammonia concentration is correlated with the deposition of polycrystalline films. A low V/III ratio and an ammonia concentration lead to poor crystalline quality and increased yellow luminescence. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize these parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.

Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
S. A. Safvi ◽  
N. R. Perkins ◽  
M. N. Horton ◽  
A. Thon ◽  
D. Zhi ◽  
...  
Keyword(s):  
Numerical Model ◽  
Vapor Phase ◽  
Growth Rates ◽  
Ammonia Concentration ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Crystal Quality ◽  
Group V ◽  
Reactor Geometry

AbstractA numerical model of an experimental gallium nitride horizontal vapor phase epitaxy reactor is presented. The model predicts the flow, concentration profiles, and growth rates. The effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated. Numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and inferior crystal quality. A low ammonia concentration is correlated to deposition of polycrystalline films. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.

Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

2015 ◽  
Vol 66 (6) ◽  
pp. 994-1000
Author(s):  
Ju-Hyung Ha ◽  
Juan Wang ◽  
Won-Jae Lee ◽  
Young-Jun Choi ◽  
Hae-Yong Lee ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Group V

Optimal Design of Reactors for Metalorganic Vapor Phase Epitaxy of Group III Nitrides

2000 ◽  
Vol 616 ◽  
Author(s):  
R. P. Pawlowski ◽  
C. Theodoropoulos ◽  
T.J. Mountziaris ◽  
H.K. Moffat ◽  
J. Han ◽  
...  
Keyword(s):  
Optimal Design ◽  
Vapor Phase ◽  
Rotating Disk ◽  
Group Iii Nitrides ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Industrial Scale ◽  
Stagnation Flow ◽  
Group Iii

AbstractMetalorganic Vapor Phase Epitaxy (MOVPE) has emerged as the technique of choice for growing thin films and structures of group III-nitrides. The objective of this work is to address the optimal design of vertical rotating disk and stagnation flow MOVPE reactors in order to achieve film thickness uniformity over large area substrates. Gas inlets that preserve the axial symmetry and enable alternating feeding of the precursors through coaxial rings were studied. The growth of GaN films from trimethyl-gallium and ammonia was used as a typical example. A fundamental reaction-transport model of the MOVPE process including gas-phase reactions and gas-surface interactions has been developed. The model was validated through comparison with growth rate data obtained from both research-scale and industrial-scale reactors. Performance diagrams for industrial-scale stagnation flow and rotating disk reactors were developed by varying the reactor geometry and operating conditions to identify regions of uniform film growth.

MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization

1996 ◽  
Vol 449 ◽  
Author(s):  
S. A. Safvi ◽  
J. M. Redwing ◽  
A. Thon ◽  
J. S. Flynn ◽  
M. A. Tischler ◽  
...  
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Growth Rates ◽  
Operating Conditions ◽  
Gas Phase Reactions ◽  
Group V ◽  
Group Iii ◽  
Design And Optimization ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

ABSTRACTThe results of gas phase decomposition studies are used to construct a chemistry model which is compared to data obtained from an experimental MOVPE reactor. A flow tube reactor is used to study gas phase reactions between trimethylgallium (TMG) and ammonia at high temperatures, characteristic to the metalorganic vapor phase epitaxy (MOVPE) of GaN. Experiments were performed to determine the effect of the mixing of the Group III precursors and Group V precursors on the growth rate, growth uniformity and film properties. Growth rates are predicted for simple reaction mechanisms and compared to those obtained experimentally. Quantification of the loss of reacting species due to oligmerization is made based on experimentally observed growth rates. The model is used to obtain trends in growth rate and uniformity with the purpose of moving towards better operating conditions.

HYDRIDE VAPOR PHASE EPITAXY OF GROUP III NITRIDE MATERIALS

2006 ◽  
pp. 1-40 ◽  
Author(s):  
Vladimir Dmitriev ◽  
Alexander Usikov
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Group Iii ◽  
Group Iii Nitride

Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy

2001 ◽  
Vol 230 (3-4) ◽  
pp. 377-380 ◽  
Author(s):  
Chengxin Wang ◽  
Hinyiu Anthony Chung ◽  
Matthias Seyboth ◽  
Markus Kamp ◽  
Karl Joachim Ebeling ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Parameters ◽  
Crack Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

2014 ◽  
Vol 573 ◽  
pp. 140-147 ◽  
Author(s):  
A. Claudel ◽  
V. Fellmann ◽  
I. Gélard ◽  
N. Coudurier ◽  
D. Sauvage ◽  
...  
Keyword(s):  
High Temperature ◽  
Gas Phase ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Effect of reactor geometry and growth parameters on the uniformity and material properties of grown by hydride vapor-phase epitaxy

1997 ◽  
Vol 182 (3-4) ◽  
pp. 233-240 ◽  
Author(s):  
S.A. Safvi ◽  
N.R. Perkins ◽  
M.N. Horton ◽  
R. Matyi ◽  
T.F. Kuech
Keyword(s):  
Vapor Phase ◽  
Material Properties ◽  
Growth Parameters ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Reactor Geometry
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