Ion Implantation and Annealing in III-V Multilayer Heterojunctions

1985 ◽  
Vol 45 ◽  
Author(s):  
C. W. Farley ◽  
B. G. Streetman
Keyword(s):  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Rapid Annealing ◽  
The Status ◽  
Device Applications ◽  
Heterojunction Device

ABSTRACTThis paper reviews the status of implantation and annealing in III-V multilayer heterojunctions. The limitations on diffusion doping of multilayers are noted. Current heterojunction device applications for implantation are summarized. Issues relevant to the annealing of multilayers are discussed, including Si migration in modulation doped structures, the effectiveness of rapid annealing in reducing SI diffusion, and impurity enhanced diffusion in superlattices. The formation of damage in multilayers and the unique properties of strained multilayers are also discussed. Finally, implant activation studies are summarized.

Synthesis of MoS 2 Layers on GaN Using Ammonium Tetrathiomolybdate for Heterojunction Device Applications

2021 ◽  
pp. 2000198
Author(s):  
Pradeep Desai ◽  
Bhagyashri Todankar ◽  
Ajinkya K. Ranade ◽  
Masaharu Kondo ◽  
Takehisa Dewa ◽  
...  
Keyword(s):  
Ammonium Tetrathiomolybdate ◽  
Device Applications ◽  
Heterojunction Device

scholarly journals Measurements of the Diffusion of Iron and Carbon in Single Crystal NiAl using Ion Implantation and Secondary Ion Mass Spectrometry

1998 ◽  
Vol 527 ◽  
Author(s):  
R. J. Hanrahan ◽  
S. P. Withrow ◽  
M. Puga-Lambers
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Single Crystal ◽  
Secondary Ion Mass Spectrometry ◽  
Tracer Diffusion ◽  
Dynamic Strain ◽  
Enhanced Diffusion ◽  
Ion Mass Spectrometry ◽  
Impurity Elements ◽  
Secondary Ion

ABSTRACTClassical diffusion measurements in intermetallic compounds are often complicated by low diffusivities or low solubilities of the elements of interest. Using secondary ion mass spectrometry for measurements over a relatively shallow spatial range may be used to solve the problem of low diffusivity. In order to simultaneously obtain measurements on important impurity elements with low solubilities we have used ion implantation to supersaturate a narrow layer near the surface. Single crystal NiAl was implanted with either 12C or both 56Fe and 12C in order to investigate the measurement of substitutional (Fe) versus interstitial (C) tracer diffusion and the cross effect of both substitutional and interstitial diffusion. When C alone was implanted negligible diffusion was observed over the range of times and temperatures investigated. When both Fe and C were implanted together significantly enhanced diffusion of the C was observed, which is apparently associated with the movement of Fe. This supports one theory of dynamic strain aging in Fe alloyed NiAl.

Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation

1995 ◽  
Vol 67 (15) ◽  
pp. 2158-2160 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
G. A. Rozgonyi ◽  
C. W. White
Keyword(s):  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

The physical state of ion implanted solids

1969 ◽  
Vol 311 (1504) ◽  
pp. 53-61 ◽  
Keyword(s):  
Ion Implantation ◽  
Physical State ◽  
Crystalline Lattice ◽  
Enhanced Diffusion ◽  
Post Irradiation ◽  
Impurity Atoms ◽  
Thermally Activated ◽  
General Terms ◽  
The Creation ◽  
Ion Implanted

The destruction of the crystalline lattice during ion implantation is discussed in general terms together with its post-irradiation annealing. It is shown that the creation of mobile defects during implantation can give rise to an irradiation enhanced diffusion which can in some cases dominate thermally activated diffusion. The expected state of implanted impurity atoms is discussed in some detail with special attention to the formation and stability of precipitate phases in an irradiation environment.

scholarly journals Ion Implantation Doping in SiC and its Device Applications

1998 ◽  
Vol 264-268 ◽  
pp. 717-720 ◽  
Author(s):  
Mulpuri V. Rao ◽  
J. Gardner ◽  
Arthur H. Edwards ◽  
N. Papanicolaou ◽  
G. Kelner ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Device Applications

Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation

1999 ◽  
Vol 86 (11) ◽  
pp. 6039-6042 ◽  
Author(s):  
I. O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Doped Polymers as Third-Order Nonlinear-Optical Materials

1990 ◽  
Vol 214 ◽  
Author(s):  
Mark. G. Kuzyk ◽  
U. C. Paek ◽  
Carl W. Dirk ◽  
Mark P. Andrews
Keyword(s):  
Optical Materials ◽  
Nonlinear Optical ◽  
Polymeric Materials ◽  
Optical Nonlinearity ◽  
Third Order ◽  
Optical Device ◽  
Optical Fiber Devices ◽  
The Status ◽  
Device Applications ◽  
Doped Polymers

ABSTRACTRecently, there has been much interest in doped polymeric materials owing to their suitability for optical device applications.[1] While most of this effort has been centered on poled polymers and their applications to electrooptics, doped polymers are beginning to emerge as a promising material class for all-optical device applications. In this contribution, we discuss the status of doped polymers as third-order optical materials. Particular attention is focused on those properties that make doped polymers attractive as device materials such as optical nonlinearity and loss and their suitability for nonlinear-optical fiber devices.

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