Properties of Amorphous Silicon Thin Film Transistors with Phosphorous-Doped Hydrogenated Microcrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
J. H. Choi ◽  
C. W. Kim ◽  
H. G. Yang ◽  
J. H. Souk
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Rf Power ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Threshold Voltages

AbstractPhosphorous (P) doped hydrogenated microcrystallme silicon (n+μ c-Si:H) films have been prepared by using the hydrogen-diluted plasma enhanced chemical vapor deposition (PECVD) method. The crystallinity of films deposited over the range of SiH4/H2 flow ratios and RF-power is studied by Raman spectroscopy. For a 900 Å thick film deposited at 250°C, a conductivity of 71Ω−1cm−1 and an average crystallinity of 49% is obtained. n+ μ c-Si:H films as well as n+ a-Si:H films are used for both etch stopper and back channel etch type TFTs and the I4-V8 characteristics are compared. For the etch stopper type TFT, the field effect mobility of 0.85 cm2/V.sec, threshold voltages of 2 – 3 V and Ion/Ioff ratio of ∼107 are obtained.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Thin Film Transistors Made From Hydrogenated Microcrystalline Silicon

1993 ◽  
Vol 321 ◽  
Author(s):  
K. C. Wang ◽  
B. Y. Chen ◽  
K. C. Hsu ◽  
T. R. Yew ◽  
H. L. Hwang
Keyword(s):  
Thin Film ◽  
Nuclear Magnetic Resonance ◽  
Hydrogen Atom ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Resonance Raman Spectroscopy ◽  
Chemical Vapor ◽  
Treatment Method ◽  
Microcrystalline Silicon ◽  
Microcrystalline Materials

ABSTRACTMicrocrystalline silicon films were deposited by diluted-hydrogen method and hydrogen-atom-treatment method at 250°C in a plasma enhanced chemical vapor deposition system and they were characterized by nuclear magnetic resonance, Raman spectroscopy, and optical bandgap Measurements. One-Mask a-Si:H thin film transistors (TFT's) were fabricated with those microcrystalline materials as the channel layer. The highest electron mobilities of the TFT's fabricated by diluted-hydrogen method and hydrogen-atom-treatment method were 1.23 and 1.04 cm2/V•s, respectively without any thermal treatment steps.

Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

2015 ◽  
Vol 36 (8) ◽  
pp. 793-795 ◽  
Author(s):  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Sol Kyu Lee ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
High Field ◽  
Field Effect Mobility ◽  
Silicon Thin Film

scholarly journals A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

10.30544/128 ◽  
2015 ◽  
Vol 21 (1) ◽  
pp. 7-14
Author(s):  
Meysam Zarchi ◽  
Shahrokh Ahangarani
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Intrinsic Stress ◽  
Hot Wire ◽  
Microcrystalline Silicon

The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature.

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