Microscopic Examination of EL2 Associated with Single Dislocations in GaAs
Keyword(s):
Abstract2" diameter wafers cut from indium doped, liquid encapsulated Czochralski (LEC) grown GaAs ingots have been examined by two different methods. Dislocations were revealed by etching, and isolated regions of enhanced [EL2], the concentration of the deep donor level EL2, weredetected by infrared transmission microscopy. In regions of low dislocation density (∼5 × 102 cm−2) single isolated dislocations were identified and at the identical sites infra-red micrographs showed increased absorption. The results demonstrate that enhancement of [EL2]occurs at single dislocations, and that the enhancement can be detected by suitable etching techniques.
2002 ◽
Vol 21
(1-2)
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pp. 303-305
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Keyword(s):
2015 ◽
Vol 621
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pp. 170-178
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1969 ◽
Vol 116
(1)
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pp. 109
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