Electrical Properties of Schottky Contacts of TiW on RTCVD Si1-x-yGexCy Films

1997 ◽  
Vol 470 ◽  
Author(s):  
Jian Mi ◽  
Yilu Zhang ◽  
Patricia Warren ◽  
Cary Y. Yang
Keyword(s):  
Electrical Properties ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Schottky Contacts ◽  
Crystal Defects ◽  
Recombination Centers ◽  
High Series

ABSTRACTHigh-quality epitaxial Si1-x-yGexCy layers were grown on Si by rapid thermal chemical vapor deposition. Schottky diodes of TiW/SiGeC were fabricated using conventional Si processes. I-V and C-V measurements were performed to assess effects of crystal defects in the alloy on the electrical properties. For defective SiGeC films due to non-substitutional carbon, high series resistance and additional tunneling current were measured under forward bias, as well as leakage current under reverse bias. A transport mechanism of deep generation/recombination centers formed by carbon complexes is proposed to explain the I-V characteristics.

The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect

1996 ◽  
Vol 53 (1) ◽  
pp. 118-122 ◽  
Author(s):  
A Türüt ◽  
B Bati ◽  
A Kökçe ◽  
M Sağlam ◽  
N Yalçin
Keyword(s):  
Barrier Height ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias

A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 911-914 ◽  
Author(s):  
D.J. Ewing ◽  
Qamar-ul Wahab ◽  
Sergey P. Tumakha ◽  
Leonard J. Brillson ◽  
X.Y. Ma ◽  
...  
Keyword(s):  
Low Voltage ◽  
Deep Level ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Polarized Light ◽  
Thermionic Emission ◽  
Chemical Vapor ◽  
Double Barrier ◽  
X Ray ◽  
Sic Wafer

In this study, we performed a statistical analysis of 500 Ni Schottky diodes distributed across a 2-inch, n-type 4H-SiC wafer with an epilayer grown by chemical vapor deposition. A majority of the diodes displayed ideal thermionic emission when under forward bias, whereas some diodes showed ‘double-barrier’ characteristics with a ‘knee’ in the low-voltage log I vs. V plot. X-ray topography (XRT) and polarized light microscopy (PLM) revealed no correlations between screw dislocations and micropipes and the presence of double-barrier diodes. Depth resolved cathodoluminescence (DRCLS) indicated that certain deep-level states are associated with the observed electrical variations.

Electroluminescence Studies Of Si Bulk Materials Using Al-Si Schottky Diodes

1997 ◽  
Vol 486 ◽  
Author(s):  
Chun-Xia Du ◽  
Wei-Xin Ni ◽  
Kenneth B. Joelsson ◽  
Guang-Di Shen ◽  
Göran V. Hansson
Keyword(s):  
Radiative Decay ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Schottky Contacts ◽  
Injection Current ◽  
Bulk Materials ◽  
Temperature Dependent ◽  
Intense Light

AbstractElectroluminescence (EL) of Si bulk materials has been studied using lowly doped substrate with two Al-Si Schottky contacts. By applying a forward bias on the structure, the intense light emissions at 1.094 eV due to the TO-phonon assisted recombination was obtained at 40 K while other TA- and 2TO-associated transitions were also observed. The Si-TO EL peak persists up to RT with a radiative decay of ∼ 5 μs. EL emission mechanisms of these Si Schottky diodes are discussed based on temperature dependent- and injection current-dependent EL measurements.

Effect of Mechanical Stress on Polycrystalline Diamond Schottky Diode I-V Characteristics

1992 ◽  
Vol 270 ◽  
Author(s):  
G. Zhao ◽  
E. M. Charlson ◽  
E. J. Charlson ◽  
T. Stacy ◽  
J. Meese ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Deposition Process ◽  
Stress Sensitivity ◽  
Stress Effect ◽  
Mechanical Sensors ◽  
Hot Filament

ABSTRACTSchottky diodes to be used for mechanical stress effect studies were fabricated using aluminum contacts to polycrystalline diamond thin films grown by a hot-filament assisted chemical vapor deposition process. Compressive stress was found to have a large effect on the forward biased current-voltage characteristics of the diode. At selected values of constant forward biased current, a linear relationship between voltage and stress, for stress less than 10 N was observed. The stress sensitivity of the diode was as high as 0.74 V/N at 1 mA forward bias. This study shows that polycrystalline diamond Schottky diodes are stress sensitive devices and have potential as mechanical sensors.

scholarly journals Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
B. Prasanna Lakshmi ◽  
R. Padma
Keyword(s):  
Barrier Height ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface State ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Current Voltage ◽  
State Densities ◽  
Optimum Annealing Temperature

The effect of annealing temperature on electrical characteristics of iridium (Ir) and iridium/gold (Ir/Au) Schottky contacts to n-type InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) techniques. It is observed that the barrier height of Ir/n-InGaN and Au/Ir/n-InGaN Schottky diodes increases after annealing at 300∘C for 1 min in N2 ambient compared to the as-deposited. However, the barrier heights are found to be decreased somewhat after annealing at 500∘C for the both Ir and Ir/Au Schottky contacts. From the above observations, it is clear that the optimum annealing temperature for both Ir and Ir/Au Schottky contacts is 300∘C. Moreover, the barrier height (ϕb), ideality factor (n) and series resistance (RS) are determined using Cheung’s and Norde methods. Besides, the energy distribution of interface state densities are determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. Based on the above results, it is clear that both Ir and Ir/Au Schottky contacts exhibit a kind of thermal stability during annealing.

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

scholarly journals Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5909
Author(s):  
Hicham Helal ◽  
Zineb Benamara ◽  
Mouhamed Amine Wederni ◽  
Sabrine Mourad ◽  
Kamel Khirouni ◽  
...  
Keyword(s):  
Barrier Height ◽  
Wide Temperature Range ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Schottky Contacts ◽  
Temperature Range ◽  
Tunnel Mechanism ◽  
Nitridation Process

Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current Iinv increments from 1 × 10−7 A at 80 K to about 1 × 10−5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01 at 420 K. The barrier height qϕb grows abnormally from 0.46 eV at 80 K to 0.83 eV at 420 K. The tunnel mechanism TFE effect is the responsible for the qϕb behavior. The series resistance Rs is very low, decreasing from 13.80 Ω at 80 K to 4.26 Ω at 420 K. These good results are due to the good quality of the interface treated by the nitridation process. However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.

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