A Model for the Etching of Ti and Tin in SC-1 Solutions

1997 ◽  
Vol 477 ◽  
Author(s):  
Steven Verhaverbeke ◽  
Jennifer W. Parker

ABSTRACTThe Standard Clean 1 (SC-1), developed by W. Kern and D. Puotinen in 1965 and disclosed in 1970 [1], consists of a mixture of ammonium-hydroxide, hydrogen-peroxide, and water. (SC-1 is also called the Airfmonium-Hydroxide Peroxide Mixture or APM). Originally, this chemical mixture was developed for cleaning silicon wafers and it has proven to be the most efficient particle removing agent found to date. SC-1 can, however, also be used for etching. SC-1 will etch the following materials: SiO2, Si3N4, Si, Ti and TiN. On top of this, SC-1 will grow an oxide on several materials (i.e., bare silicon).In this paper, a quantitative model for the SC-1 solution is presented. The etching of Ti and TiN is shown to be fundamentally different from the etching of SiO2. The mixture of Ammonium-hydroxide and Hydrogen Peroxide must be optimized differently for Ti and TiN etching than for the particle removal from Silicon wafers.

1997 ◽  
Vol 477 ◽  
Author(s):  
Steven Verhaverbeke ◽  
Jennifer W. Parker ◽  
Chris F. McConnell

The RCA Standard Clean, developed by W. Kern and D. Puotinen in 1965 and disclosed in 1970 [1] is extremely effective at removing contamination from silicon surfaces and is the defacto industry standard.[2]. The RCA clean consists of two sequential steps: the Standard Clean 1 (SC-1) followed by the Standard Clean 2 (SC-2). The SC-1 solution, consisting of a mixture of ammonium-hydroxide, hydrogen-peroxide, and water, is the most efficient particle removing agent found to date. This mixture is also referred to as the Ammonium- Hydroxide/Hydrogen-Peroxide Mixture (APM). In the past, SC-1 solutions had the tendency to deposit metals on the surface of the wafers, and consequently treatment with the SC-2 mixture was necessary to remove metals. Ultra-clean chemicals minimize the need for SC-2 processing. SC-I solutions facilitate particle removal by etching the wafer underneath the particles; thereby loosening the particles, so that mechanical forces can readily remove the particles from the wafer surface. The ammonium hydroxide in the solution steadily etches silicon dioxide at the boundary between the oxide and the aqueous solution (i.e., the wafer surface). The hydrogen peroxide in SC-I serves to protect the surface from attack by OH" by re-growing a protective oxide directly on the silicon surface (i.e., at the silicon/oxide interface). If sufficient hydrogen peroxide is not present in the solution, the silicon will be aniostropically etched and surface roughening will quickly occur. On the other hand, hydrogen peroxide readily dissociates and forms water and oxygen. If the concentration of the resulting oxygen is too high, bubbles will appear in the solution. The gas liquid interfaces that result from the bubble formation act as a “getter” for particles that can re-deposit on the wafer surface if a bubble comes in contact with the wafer.


2007 ◽  
Vol 70 (3) ◽  
pp. 681-684 ◽  
Author(s):  
YNES R. ORTEGA ◽  
MARIA P. TORRES ◽  
SIARA VAN EXEL ◽  
LAUREN MOSS ◽  
VITALIANO CAMA

The order Microsporidia contains a number of ubiquitous pathogens that can infect various animals, including humans. Enterocytozoon bieneusi and Encephalitozoon intestinalis have been associated with gastrointestinal illness in humans. The effect of four disinfectants—ammonium hydroxide, hydrogen peroxide, and two commercial disinfectants containing peroxyacetic acid (Tsunami) and N-alkyl dimethyl benzyl ammonium chloride (Timsen)—on E. intestinalis spores was examined using exposure times of 1, 5, and 15 min. Spore viability was determined in vitro with RK-13 cells. Hydrogen peroxide was most efficient at inactivating microsporidial spores at all tested concentrations and treatment times, whereas ammonium hydroxide was effective only at the highest concentration at all exposure times. Tsunami (40 μg/ml) and Timsen (200 and 400 ppm) could inactivate spores when incubated for 5 and 15 min.


1989 ◽  
pp. 297-306 ◽  
Author(s):  
V. B. Menon ◽  
L. D. Michaels ◽  
R. P. Donovan ◽  
D. S. Ensor

2009 ◽  
Vol 23 (12) ◽  
pp. 1709-1721 ◽  
Author(s):  
Francesca Barbagini ◽  
Sandip Halder ◽  
Tom Janssens ◽  
Karine Kenis ◽  
Kurt Wostyn ◽  
...  

2012 ◽  
Vol 195 ◽  
pp. 181-184 ◽  
Author(s):  
Ji Hyun Jeong ◽  
Bong Kyun Kang ◽  
Min Su Kim ◽  
Hong Seong Sohn ◽  
Ahmed A. Busnaina ◽  
...  

In the semiconductor wafer cleaning, ammonium hydroxide based APM (ammonium peroxide mixture) has been widely used to remove particles and organic contaminants [. However as the film thickness and line width of semiconductor structure scales down rapidly, the material losses by etching reaction of alkaline chemicals can cause serious problem in yield loss due to electric failure. The presence of H2O2 could enhance the material loss on silicon wafer. Very dilute alkaline chemicals might be of interest since it could minimize any possible ionic contamination or chemical residues from chemicals as long as we control the surface roughness and particle removal efficiency. Also the characterization of these very dilute alkaline chemicals will be very useful for particle removal in gas dissolved DI water.


1979 ◽  
Vol 25 (8) ◽  
pp. 911-914 ◽  
Author(s):  
E. B. Lillehoj ◽  
A. Lagoda ◽  
W. F. Maisch

Corn naturally contaminated with aflatoxin was used as a substrate in the ethanol fermentation. Distribution of toxin in several process and recovery fractions was identified. Although little degradation of the mycotoxin occurred during fermentation, no toxin appeared in the distilled alcohol. As accumulation of toxin in spent grains represents a potential problem in use of the material as animal feed, several decontamination procedures were tested. Sodium hydroxide, ammonium hydroxide, sodium hypochlorite, and hydrogen peroxide were identified as efficient agents of toxin degradation.


2002 ◽  
Vol 68 (5) ◽  
pp. 2576-2579 ◽  
Author(s):  
Susan C. Weir ◽  
Nicholas J. Pokorny ◽  
Ramon A. Carreno ◽  
Jack T. Trevors ◽  
Hung Lee

ABSTRACT Nine liquid disinfectants were tested for their ability to reduce infectivity of Cryptosporidium parvum oocysts in cell culture. A 4-min exposure to 6% hydrogen peroxide and a 13-min exposure to ammonium hydroxide-amended windshield washer fluid reduced infectivity 1,000-fold. Other disinfectants tested (70% ethanol, 37% methanol, 6% sodium hypochlorite, 70% isopropanol, and three commercial disinfectants) did not reduce the infectivity after a 33-min exposure. The results indicate that hydrogen peroxide and windshield washer fluid or ammonium hydroxide disinfectant may be suitable laboratory disinfectants against C. parvum oocysts.


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