High Resolution X-Ray Reflectometry and Diffraction of CaF2/Si(111) Structures Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 484 ◽  
Author(s):  
E. Abramof ◽  
S. O. Ferreira ◽  
P. H. O Rappl ◽  
A. Y. Ueta ◽  
C. Boschetti ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface Roughness ◽  
X Ray Diffraction ◽  
Reflectivity Spectrum ◽  
X Ray ◽  
Interference Fringes ◽  
Reflectivity Spectra

AbstractCaF2 layers were grown by molecular beam epitaxy on differently prepared Si(111) substrates. X-ray reflectivity spectra were measured and fitted. From the fitting process, the thickness of the CaF2 layer was precisely (within 1 Å) determined and the CaF2/Si interface roughness was also obtained. This roughness was used as an evaluation parameter for the quality of the layers. The CaF2/Si sample from which the intentional oxide was desorpted at 800°C inside the growth chamber exhibited the most clear x-ray reflectivity spectrum with very well resolved interference fringes. The epitaxial relations of the CaF2/Si samples grown at temperatures between 250 and 700°C were determined from x-ray diffraction analysis.

Structural Perfection of in GaAs/InP Superlattices Grown by Gas Source Molecular Beam Epitaxy: A High-Resolution X-Ray Diffraction Study

1987 ◽  
Vol 103 ◽  
Author(s):  
J. M. Vandenberg ◽  
M. B. Panish ◽  
R. A. Hamm
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Parameters ◽  
Molecular Layer ◽  
X Ray Diffraction ◽  
Structural Perfection ◽  
X Ray ◽  
Gas Source ◽  
Step Model

ABSTRACTHigh-resolution X-ray diffraction (HRXRD) studies have been cardied out to determine the structural perfection and periodicity for a number of high-quality InGaAsfInP superlattices grown by gas source molecular beam epitaxy. X-ray scans were carried out with a compact four-crystal monochromator resulting in a resolution of one molecular layer (∼3,Å), which enables one to observe very small variations in the periodic structure. Sharp and strong higher-order satellite reflections in the XRD profiles were observed indicating smooth interfaces with well-defined modulated structures. Excellent computer simulated fits of the X-ray satellite pattern could be generated based on a kinematical XRD step model which assumes ideally sharp interfaces, and periodic structural parameters such as the strain in the well could be extracted. Our results3 demonstrate that HRXRD in conjunction with the kinematical step model is a very sensitive method to assess periodic structural modifications in superlattices as a result of the precise growth conditions in the gas source MBE system.

Double Periodicity Formation in EuTe/PbTe Superlattices

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.

High-resolution X-ray diffraction analysis of cubic GaN grown on (001)GaAs by RF-radical source molecular beam epitaxy

1998 ◽  
Vol 189-190 ◽  
pp. 425-429 ◽  
Author(s):  
Z.X Qin ◽  
H Nagano ◽  
Y Sugure ◽  
A.W Jia ◽  
M Kobayashi ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Diffraction Analysis ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11n)A GaAs

2000 ◽  
Vol 213 (3-4) ◽  
pp. 214-220
Author(s):  
C Villar ◽  
A Sanz-Hervás ◽  
M Aguilar ◽  
P.O Vaccaro ◽  
E.J Abril ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Diffraction Study ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

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