The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation

2007 ◽  
Vol 556-557 ◽  
pp. 961-964 ◽  
Author(s):  
Alexander M. Ivanov ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski
Keyword(s):  
Experimental Data ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Carrier Localization ◽  
Charge Collection Efficiency ◽  
Radiation Induced ◽  
Nuclear Detectors ◽  
Two Parameter ◽  
Mev Protons ◽  
Α Particles

The charge collection efficiency (ССЕ) of SiC-detectors preliminarily irradiated with 8 MeV protons at a fluence of 1014 cm-2 has been studied. Nuclear spectrometric techniques with 5.4 MeV α-particles were employed to test the detectors. The concentration of primarily created defects was estimated to be 4×1016 cm-3. A strong compensation of SiC was observed, which allowed connection of the structure in the forward mode. The experimental data obtained were processed using a simple two-parameter model of signal formation. The model makes it possible to separate the contributions of electrons and holes to the ССЕ. An additional irradiation at a fluence of 2×1014 cm-2 reduced the ССЕ value by a factor of 2 and gave rise to polarization. The latter indicates that radiation-induced centers are not only actively involved in carrier localization (with a decrease in the lifetime), but also in transformation of the electric field within the detector.

Semi-Insulating InP Particle Detectors For X- And γ-Ray Detection

1997 ◽  
Vol 487 ◽  
Author(s):  
P. G. Pelfer ◽  
F. Dubecký ◽  
R. Fomari ◽  
M. Pikna ◽  
M. Krempaský ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Energy Resolution ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Back Contact ◽  
X Rays ◽  
Particle Detectors ◽  
Charge Collection Efficiency ◽  
Γ Ray ◽  
Α Particles

AbstractA study of electrical properties and detection performances of the semi-insulating (SI) InP based detectors is presented. Detectors with a top P+ layer and a Schottky back contact give the charge collection efficiency about 90 % and an energy resolution 3.7% (FWHM) for 5.48MeV α-particles at 250 K. Detection of X-rays (122 keV and 60 keV) photons in temperature region 220–250 K is demonstrated. Multiple peaking observed during detection of photons is discussed.

Study of Ion Induced Damage in 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 389-392 ◽  
Author(s):  
A. Lo Giudice ◽  
P. Oliveira ◽  
F. Fizzotti ◽  
Claudio Manfredotti ◽  
E. Vittone ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Collection Efficiency ◽  
Radiation Hardness ◽  
Experimental Results ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Fitting Procedure ◽  
Mev Protons

The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.

Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C

2009 ◽  
Vol 615-617 ◽  
pp. 853-856
Author(s):  
Alexander M. Ivanov ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski
Keyword(s):  
Collection Efficiency ◽  
Amplitude Spectrum ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Charge Collection Efficiency ◽  
Radiation Induced ◽  
Two Stages ◽  
Nuclear Detectors ◽  
Nuclear Radiation Detectors ◽  
Induced Defects

The effect of a cycle "introduction of defects – annealing – introduction of defects" on the SiC properties has been studied to know the degradation of characteristics of p-n- nuclear radiation detectors. The irradiation with 8 МeV protons at fluences of about 3×1014 сm-2 was used. The annealing was carried out in two stages one-hour at temperatures of 600 and 700 °С. Nuclear spectrometric techniques with 5.8 MeV -particles were employed to test the detectors. The charge collection efficiency and features of the amplitude spectrum were determined to study the capture of charge carriers by radiation-induced defects. Measurements were made in the temperature range of 20–250 °С. It is shown that at 250 °С there is a decrease in the carriers capture. The form of the amplitude spectrum essentially improves. The first irradiation and the subsequent annealing do not change significantly the radiation hardness of SiC. During the second irradiation the effective concentration of the introduced centers is 1.3 times higher. This result may be due to the high total fluence of protons, 6×1014 cm-2.

Barrier Effect of Retrograde Well Against Ion-Induced-Charge Carriers

1993 ◽  
Vol 316 ◽  
Author(s):  
Hirokazu Sayama ◽  
Takehisa Kishimoto ◽  
Mikio Takai ◽  
Hiroshi Kimura ◽  
Yoshikazu Ohno ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Charge Carriers ◽  
Charge Collection ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Charge Collection Efficiency ◽  
Mev Protons ◽  
Good Agreement

ABSTRACTThe charge collection efficiency of a diode with a retrograde well was estimated using focused ion beam irradiation at 400 keV and 2 MeV. The retrograde well was found to effectively suppress a collection of charge carriers created by energetic particles. The charge collection efficiency of the diode with the retrograde well was ~ 25 % lower than that with the conventional well when 400 keV ~ 2 MeV protons were irradiated normal to diodes. This result was in good agreement with device simulation.

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  
Keyword(s):  
Radiation Damage ◽  
3D Imaging ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Spatial Mapping ◽  
Charge Collection Efficiency ◽  
Silicon Sensor
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