Phase Transition and Pyroelectric Properties of La-Modified PbTiO3 Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Kenji Iijima ◽  
Koichi Niihara
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Curie Temperature ◽  
Electric Properties ◽  
Rich Region ◽  
Pyroelectric Properties

ABSTRACTPhase transition and related electric properties of La-modified PbTiO3 (PLT) thin films were investigated. Curie temperature of the films decreased and the diffuseness of the phase transition increased with increasing La content. Simultaneously, it was losing a ferroelectricity and pyroelectric properties degraded in La-rich region. This is considered to be due to the increase of a defect in the film by exchanging Pb2+ ions to La3+ ions. Compensation of the defect by the addition of Mn ion improve the ferroelectricity of the PLT and the films showed an extremely large pyroelectric properties.

INTERPLAY BETWEEN TRANSPORT, MAGNETIC-, AND STRUCTURAL PROPERTIES OF MN-PEROVSKITES WITH VARIOUS DOPING LEVEL

2000 ◽  
Vol 14 (29n31) ◽  
pp. 3735-3740 ◽  
Author(s):  
P. WAGNER ◽  
I. GORDON ◽  
A. DAS ◽  
J. VANACKEN ◽  
V. V. MOSHCHALKOV ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Curie Temperature ◽  
Charge Carrier ◽  
Hall Effect ◽  
Charge Carriers ◽  
Magnetic Interactions ◽  
Thermally Activated ◽  
Underdoped Sample ◽  
Type Contribution

We performed a comparative study on the colossal negative magnetoresistivity and the Hall effect in thin films of the manganese perovskite La 1-x Ca x MnO 3 with x =0.3 and x =0.67. The underdoped sample ( x =0.3) undergoes a phase transition from a paramagnetic semiconductor to a ferromagnetic quasimetal at the Curie temperature T C =280 K , while the overdoped compound ( x =0.67) stays a paramagnetic semiconductor at all temperatures. Both materials show colossal negative magneto-resistivity, albeit on considerably different temperature- and field scales, depending on the magnetic interactions between neighbouring Mn ions. According to the Hall data, the charge carriers in the underdoped material are hole-type, partially compensated by an electron-type contribution. The overdoped system shows electronic carriers with a thermally activated concentration. The ordinary Hall effect is in both compounds superimposed by an anomalous Hall contribution with a sign opposite to the intrinsic charge-carrier type.

Epitaxial La2/3Sr1/3MnO3 thin films with unconventional magnetic and electric properties near the Curie temperature

2006 ◽  
Vol 515 (2) ◽  
pp. 496-499 ◽  
Author(s):  
L. Signorini ◽  
M. Riva ◽  
M. Cantoni ◽  
R. Bertacco ◽  
F. Ciccacci
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Electric Properties ◽  
Magnetic And Electric Properties

scholarly journals Modulating the phase transition temperature of giant magnetocaloric thin films by ion irradiation

2017 ◽  
Vol 1 (6) ◽  
Author(s):  
S. Cervera ◽  
M. Trassinelli ◽  
M. Marangolo ◽  
C. Carrétéro ◽  
V. Garcia ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Phase Transition Temperature ◽  
Ion Irradiation

Strain Control of Phase Transition and Exchange Bias in Flexible Heusler Alloy Thin Films

2021 ◽  
Author(s):  
Yechao Ling ◽  
Yong Hu ◽  
Haobo Wang ◽  
Ben Niu ◽  
Jiawei Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Exchange Bias ◽  
Heusler Alloy ◽  
Strain Control

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Amorphous-to-crystalline phase transition of (InTe)x(GeTe) thin films

2010 ◽  
Vol 108 (2) ◽  
pp. 024506 ◽  
Author(s):  
Ki-Ho Song ◽  
Seung-Cheol Beak ◽  
Hyun-Yong Lee
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Crystalline Phase ◽  
Crystalline Phase Transition

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

2021 ◽  
pp. 111114
Author(s):  
Hei Man Yau ◽  
Xinxin Chen ◽  
Chi Man Wong ◽  
Deyang Chen ◽  
Jiyan Dai
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Orientation Control

Cr doping-induced structural phase transition, optical tuning and magnetic enhancement in BiFeO3 thin films

2017 ◽  
Vol 186 ◽  
pp. 198-201 ◽  
Author(s):  
Benlong Guo ◽  
Hongmei Deng ◽  
Xuezhen Zhai ◽  
Wenliang Zhou ◽  
Xiankuan Meng ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Structural Phase Transition ◽  
Structural Phase ◽  
Bifeo3 Thin Films ◽  
Magnetic Enhancement ◽  
Cr Doping
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