Reparation and Characterization of BST Thin Films with Hybrid Bottom Electrodes

1997 ◽  
Vol 493 ◽  
Author(s):  
Joon-Hyung Ahn ◽  
Jeong-Ho Park ◽  
Won-Jae Lee ◽  
Ho-Gi Kim

ABSTRACTThin platinum layer was used for the modification of the interface state between (Ba,Sr)TiO3 (BST) thin films and RuO2 bottom electrodes. Pt/RuO2 hybrid bottom electrodes were fabricated with various platinum deposition temperatures by a conventional dc magnetron sputtering method. Although the surface morphology and XRD patterns of BST thin films were not changed, the electrical properties of BST films deposited on Pt/RuO2 hybrid electrodes were improved compared to the films on RuO2 electrodes. Dielectric constant (εr) and leakage current density of BST thin films on Pt/RuO2 hybrid electrodes prepared at the platinum deposition temperature of 400°C were 498 and 8.6 × 10−8 A/cm2 at 1.5V, respectively.

1999 ◽  
Vol 603 ◽  
Author(s):  
P.K. Baumann ◽  
D.Y. Kaufman ◽  
S.K. Streiffer ◽  
J. IM ◽  
O. Auciello ◽  
...  

AbstractWe have investigated the structural and electrical characteristics of (BaxSr1−x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.


Vacuum ◽  
2021 ◽  
Vol 188 ◽  
pp. 110200
Author(s):  
Sihui Wang ◽  
Wei Wei ◽  
Yonghao Gao ◽  
Haibin Pan ◽  
Yong Wang

2003 ◽  
Vol 433-436 ◽  
pp. 987-990 ◽  
Author(s):  
T. Seppänen ◽  
György Z. Radnóczi ◽  
Sukkaneste Tungasmita ◽  
L. Hultman ◽  
J. Birch

1996 ◽  
Vol 31 (23) ◽  
pp. 6137-6144 ◽  
Author(s):  
Yupu Li ◽  
J. A. Kilner ◽  
J. Thomas ◽  
D. Lacey ◽  
L. F. Cohen ◽  
...  

2003 ◽  
Vol 55 (1) ◽  
pp. 939-946 ◽  
Author(s):  
Y. L. Cheng ◽  
N. Chong ◽  
Y. Wang ◽  
J. Z. Liu ◽  
H. L. W. Chan ◽  
...  

Author(s):  
Abderrazek Khalfallaoui ◽  
Gabriel Velu ◽  
Ludovic Burgnies ◽  
Jean-Claude Carru

JOM ◽  
2013 ◽  
Vol 65 (4) ◽  
pp. 562-566 ◽  
Author(s):  
Tolga Tavsanoglu ◽  
Ceren Begum ◽  
Murat Alkan ◽  
Onuralp Yucel

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