MOCVD Growth and Characterization of (BaxSr1−x)Ti1+yO3+z Thin Films for High Frequency Devices

1999 ◽  
Vol 603 ◽  
Author(s):  
P.K. Baumann ◽  
D.Y. Kaufman ◽  
S.K. Streiffer ◽  
J. IM ◽  
O. Auciello ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Substantial Reduction ◽  
Chemical Vapor ◽  
Electron Beam Evaporation ◽  
Large Area ◽  
Bst Thin Films ◽  
Mocvd Growth ◽  
Bst Films

AbstractWe have investigated the structural and electrical characteristics of (BaxSr1−x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

Epitaxial Growth of Ba1−xSrxTiO3 Thin Films on YBa2Cu3O7−x Electrode by PE-MOCVD

1993 ◽  
Vol 335 ◽  
Author(s):  
C.S. Chern ◽  
S. Liang ◽  
Z.Q. Shi ◽  
S. Yoon ◽  
A. Safari ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrode Materials ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Pyroelectric Coefficient ◽  
Zero Bias ◽  
Bst Thin Films ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Bst Films

AbstractPlasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) has been successfully employed for the deposition of (100) oriented barium strontium titanate (BST) thin films on a variety of substrate and electrode materials. The incorporation of O2 plasma, which was used as oxidation reactant, has helped to reduce the required temperature for deposition of high-quality STO and BST thin films. This low temperature processing may make it possible to integrate BST on Si and GaAs. BST films with low leakage current densities of about 10−7 A/cm2 at 2-volt (about 105 V/cm) operation were obtained from PE-MOCVD processing. Moreover, the BST results of capacitance-temperature (C-T) measurements show that most of the PE-MOCVD BST films have Curie temperatures of about 30–35°C and a peak dielectric constant of 600–800 at zero bias voltage, The sharp transition in the C-T data indicates that the BST films may have a high induced pyroelectric coefficient at room temperature, which is highly desirable for uncooled IR imaging arrays. The x-ray diffraction and Rutherford backscattering spectrometry results show that the BST film composition reproducibility was well controlled at around Ba0.75Sr0.25TiO3 with a 4% variation. Device quality BST thin films with the thickness of 1000–2000 Å were produced. These results indicate that PE-MOCVD has high potential to be further developed and promoted as a production deposition technique providing high permittivity dielectric thin films for microelectronics and IR sensor industries.

Reparation and Characterization of BST Thin Films with Hybrid Bottom Electrodes

1997 ◽  
Vol 493 ◽  
Author(s):  
Joon-Hyung Ahn ◽  
Jeong-Ho Park ◽  
Won-Jae Lee ◽  
Ho-Gi Kim
Keyword(s):  
Thin Films ◽  
Interface State ◽  
Dc Magnetron Sputtering ◽  
Bst Thin Films ◽  
Platinum Deposition ◽  
Bst Films ◽  
Xrd Patterns ◽  
Platinum Layer ◽  
Thin Platinum

ABSTRACTThin platinum layer was used for the modification of the interface state between (Ba,Sr)TiO3 (BST) thin films and RuO2 bottom electrodes. Pt/RuO2 hybrid bottom electrodes were fabricated with various platinum deposition temperatures by a conventional dc magnetron sputtering method. Although the surface morphology and XRD patterns of BST thin films were not changed, the electrical properties of BST films deposited on Pt/RuO2 hybrid electrodes were improved compared to the films on RuO2 electrodes. Dielectric constant (εr) and leakage current density of BST thin films on Pt/RuO2 hybrid electrodes prepared at the platinum deposition temperature of 400°C were 498 and 8.6 × 10−8 A/cm2 at 1.5V, respectively.

Structural characterization of deuterated titanium thin films

1999 ◽  
Vol 14 (5) ◽  
pp. 1969-1976 ◽  
Author(s):  
R. Checchetto ◽  
P. Scardi
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Rutherford Backscattering Spectrometry ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Deuterium Content ◽  
Elastic Recoil ◽  
Titanium Thin Films ◽  
Substrate Temperatures

Pure and deuterated titanium thin films 140 nm thick were deposited on 〈100〉 Si wafers by electron beam evaporation, keeping the substrate temperature at 150, 300, and 450 °C. Pure Ti samples were deposited in a high-vacuum condition, while for deuterated samples, deuterium high-purity gas was introduced in the deposition chamber during the process. Film composition was studied by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA), whereas structural characterization of the deposited layers was carried out by x-ray diffraction (XRD) using both the traditional Bragg–Brentano geometry and a parallel beam setup for pole figure measurements. Titanium films deposited in a high vacuum showed the hexagonal Ti structure (α−Ti) and grew with a double orientation at each of the examined substrate temperatures. Deuterated titanium films deposited at 150 °C had a compositional ratio Ti: D = 1: 0.35 and grew with a [111] oriented fcc structure, suggesting the formation at low temperature of a substoichiometric δ hydride phase. Deuterated films deposited at higher substrate temperatures revealed a lower deuterium content and XRD reflections corresponding to the hexagonal Ti phase. The present results were interpreted according to a temperaturedependent D2 adsorption mechanism at the surface of the continuously growing Ti film.

Properties of Zr-Substituted (Ba,Sr)TiO3 Thin Films for Integrated Capacitors

1999 ◽  
Vol 603 ◽  
Author(s):  
G. T. Stauf ◽  
P. S. Chen ◽  
W. Paw ◽  
J. F. Roeder ◽  
T. Ayguavives ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Bst Thin Films ◽  
Density Values ◽  
Bst Films ◽  
The Impact

AbstractThere has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20% to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/µm2were also obtained.

Deposition and Characterization of High Dielectric Thin Films for Memory Device Application

2003 ◽  
Vol 10 (04) ◽  
pp. 591-604 ◽  
Author(s):  
Hyeong Joon Kim ◽  
Ju Cheol Shin ◽  
Cheol Seong Hwang ◽  
Sang Yong No
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Memory Device ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Bst Thin Films ◽  
Metal Organic ◽  
Sputter Deposited ◽  
High Dielectric

(Pb,La)TiO 3 (PLT) and Pb(Zr,Ti)O 3 (PZT) thin films were deposited on Pt/SiO2/Si substrate by metal-organic chemical vapor deposition (MOCVD) using a solid delivery system. The domain configurations of the deposited PLT thin films were investigated, and the film with a columnar structure exhibited a very stable write/read operation for the domain memory application. Electrical properties of PLT, PZT and rf-sputter-deposited (Ba,Sr)TiO 3 (BST) thin films were measured, and their conduction mechanisms were analyzed. The composition and thickness uniformity of BST thin films deposited by the low temperature MOCVD method on a patterned wafer with 0.15 μm-diameter contact holes were investigated, and complete thickness and composition uniformity were obtained especially for the case of a dome-wall-type chamber with a wall temperature of 450°C.

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible

Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Thermal Behavior ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicon Compounds ◽  
Carrier Gas

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

Preparation and characterization of single crystalline anatase TiO2 films on LSAT (001) by MOCVD

RSC Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 4867-4871 ◽  
Author(s):  
Mingxian Wang ◽  
Weiguang Wang ◽  
Zhao Li ◽  
Xuejian Du ◽  
Xianjin Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Anatase Tio2 ◽  
Tio2 Films ◽  
Anatase Structure ◽  
Metalorganic Chemical

TiO2 thin films with anatase structure have been prepared on [LaAlO3]0.3[SrAl0.5Ta0.5O3]0.7 (LSAT) (001) substrates by metalorganic chemical vapor deposition (MOCVD) in the substrate temperature range of 500–650 °C.

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