Mechanical and Tribological Properties of a-GeCx Films Deposited by DC-Magnetron Sputtering

1997 ◽  
Vol 505 ◽  
Author(s):  
L. G. Jacobsohn ◽  
D. C. Reigada ◽  
F. L. Freire ◽  
R. Prioli ◽  
S. I. Zanette ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Internal Stress ◽  
Rutherford Backscattering Spectrometry ◽  
Argon Plasma ◽  
Carbon Films ◽  
Elastic Recoil ◽  
Dc Magnetron Sputtering ◽  
Elastic Recoil Detection ◽  
Mechanical And Tribological Properties ◽  
Film Hardness

ABSTRACTAmorphous carbon-germanium films were grown by dc-magnetron sputtering at different argon plasma pressures ranging from 0.17 and 1.4 Pa. The water-cooled sample holder was grounded. The film thickness were typically 0.5 μm. The ratio between germanium and carbon atomic concentration ranges up to 2.8, as measured by Rutherford backscattering spectrometry (RBS). Elastic recoil detection technique was used to measure hydrogen contamination. The film hardness was measured by nanoindentation techniques and the internal stress was determined by the bending of the substrate. The incorporation of Ge reduces both the film hardness and the internal stress. Hardness and internal stress increases when the films are deposited in lower pressures. Atomic Force Microscopy (AFM) was used to measure the surface roughness, which was found to be insensitive to the pressure and to the Ge content. A possible influence of the thickness on the morphology of pure carbon films is discussed. The friction coefficient measured by AFM is independent on the film composition within experimental errors.

On the Effects of the Thermal Treatment on the Structural, Mechanical and Tribological Properties of Amorphous Carbon-Nitrogen Films Deposited by Magnetron Sputtering

1997 ◽  
Vol 498 ◽  
Author(s):  
M. M. Lacerda ◽  
F. L. Freire
Keyword(s):  
Surface Roughness ◽  
Friction Coefficient ◽  
Magnetron Sputtering ◽  
Internal Stress ◽  
Amorphous Carbon ◽  
Rutherford Backscattering Spectrometry ◽  
Rf Magnetron Sputtering ◽  
Progressive Increase ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil

ABSTRACTAmorphous carbon-nitrogen films, a-CNx, deposited by rf-magnetron sputtering in N2 atmosphere were annealed in vacuum at temperatures between 300 and 700 °C. The annealing time was 30 minutes. The modifications on the film microstructure were monitored by infrared spectroscopy (IR), while the composition and the atomic density were determined by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA). The internal stress was determined by measuring the film-induced bending of the substrate and the hardness was measured by nanoindentation. Atomic force microscopy (AFM) provided the friction coefficient and the surface roughness. The ratio between nitrogen and carbon atomic concentration decreases for temperatures higher than 500 °C, whereas the film density increases with the annealing temperature: 40 % in the temperature range here studied. The behavior of the D and G Raman bands, IR active due to the nitrogen incorporation in the carbon network, suggests a progressive increase of the size of the graphite-like domains. The hardness of the as-deposited a-CNx film is around 2 GPa. However, both hardness and internal stress increase by a factor of three in samples annealed at 700 °C, while the surface roughness and the friction coefficient decrease by a factor of about two.

Internal Stress in Nitrogen Doped Diamond-Like a-C:H Films

1992 ◽  
Vol 270 ◽  
Author(s):  
D. Franceschini ◽  
C. Achete ◽  
F. Freire ◽  
G. Mariotto
Keyword(s):  
Infrared Spectroscopy ◽  
Internal Stress ◽  
Carbon Films ◽  
Elastic Recoil ◽  
Hard Carbon ◽  
Rutherford Back Scattering ◽  
Elastic Recoil Detection ◽  
Nitrogen Doped ◽  
Back Scattering ◽  
Ir And Raman

ABSTRACTResults of a study on internal stress, hardness and structure of nitrogen doped amorphous hydrogenated hard carbon films deposited by r.f. glow discharge on silicon are presented. Films obtained for different bias voltage (Vb), N2 partial pressure and total gas pressure were characterized by Nuclear Reaction (NR), Elastic Recoil Detection (ERD), Rutherford Back-Scattering (RBS), Infrared Spectroscopy (IR) and Raman Scattering. The elemental composition, density and structure are correlated with Vickers hardness, and internal stress values obtained by the substrate bending method. It has been observed that internal stress considerably decreases with increasing nitrogen content, contrary to the behavior shown by hardness, structure and hydrogen concentration, which remain unchanged.

ERRATA: PHOTOLUMINESCENCE PROPERTIES AND LOCAL STRUCTURE OF POLYMER-LIKE a-C:H FILMS

2000 ◽  
Vol 14 (16) ◽  
pp. 1701-1717 ◽  
Author(s):  
C. GODET ◽  
T. HEITZ ◽  
B. DRAVILLON ◽  
J. E. BOURÉE
Keyword(s):  
Local Structure ◽  
Carbon Films ◽  
Dissociation Rate ◽  
Photoluminescence Properties ◽  
Elastic Recoil ◽  
Electron Hole ◽  
Elastic Recoil Detection ◽  
Bonded Materials ◽  
Infrared Ellipsometry

In order to understand better the electronic properties of π-bonded materials, some optical and photoluminescence properties of amorphous carbon films have been investigated as a function of film density (0.9 to 1.7 g·cm-3). This study gives an overview of the radiative recombination properties in relation with local structure characterizations (in situ infrared ellipsometry and Raman spectroscopies) for a series of dual-plasma deposited polymer-like a-C:H films. Medium range topology has consequences in the hyperconjugation effects seen on infrared bands, as well as in optical and resonant Raman characteristics. Photoluminescence (PL) excitation spectroscopy reveals resonance features which are attributed to exciton-like electron-hole pairs in close Coulomb interaction. The PL efficiency shows a sharp quenching for densities above 1.3 g·cm-3 where a clear transition also occurs in the Raman "fingerprint". In addition, quantitative analysis of IR ellipsometry and Elastic Recoil Detection give evidence of a strong decrease of both the effective dynamical charge e*(C-H) and the bandwidth of sp3 C-H vibrations; this is interpreted as being a result of the increase of local strains in the carbon skeleton, meaning that matrix distortions already appear at H content values as high as 46 H at.% due to film densification. An expected consequence is the mixing between π and σ molecular orbitals and the enhancement of the dissociation rate of confined electron-hole pairs. PL quenching would thus result from both a decrease of exciton confinement and an increase of the density of accessible nonradiative centers.

PHOTOLUMINESCENE PROPERTIES AND LOCAL STRUCTURE OF POLYMER-LIKE A-C:H FILMS

2000 ◽  
Vol 14 (02n03) ◽  
pp. 274-287
Author(s):  
C. GODET ◽  
T. HEITZ ◽  
J. E. BOURÉE
Keyword(s):  
Local Structure ◽  
Carbon Films ◽  
Dissociation Rate ◽  
Elastic Recoil ◽  
Electron Hole ◽  
Elastic Recoil Detection ◽  
Bonded Materials ◽  
Infrared Ellipsometry ◽  
Quantiative Analysis

In order to understand better the electronic properties of π-bonded materials, some optical and photoluminescence properties of amorphous carbon films have been investigated as a function of film density (0.9 to 1.7 g.cm-3). This study gives an overview of the radiative recombination properties in relation with local structure characterizations (in situ infrared ellipsometry and Raman spectroscopies) for a series of dual-plasma deposited polymer-like a-C:H films. Medium range topology has consequences in the hyperconjugation effects seen on infrared bands, as well as in optical and resonant Raman characteristics. Photoluminescence (PL) excitation spectroscopy reveals resonance features which are attributed to exciton-like electron-hole pairs in close Coulomb interaction. The PL efficiency shows a sharp quenching for densities above 1.3 g.cm -3 where a clear transition also occurs in the Raman "fingerprint". In addition, quantiative analysis of IR ellipsometry and Elastic Recoil Detection give evidence of a strong decrease of both the effective dynamical charge e*(C-H) and the bandwidth of sp 3 C-H vibrations; this is interpreted as being a result of the increase of local strains in the carbon skeleton, meaning that matrix distortions already appear at H content values as high as 46 H at .% due to film densification. An expected consequence is the mixing between π and σ molecular orbitals and the enhancement of the dissociation rate of confined electron-hole pairs. PL quenching would thus result form both a decrease of exciton confinement and an increase of the density of accessible nonradiative centers.

EXPERIMENTAL OBSERVATIONS OF DISK-SHAPED PATTERNS IN Fe FILMS SPUTTERING DEPOSITED ON SILICONE OIL SURFACES

2009 ◽  
Vol 23 (14) ◽  
pp. 3147-3157 ◽  
Author(s):  
YONG-JU ZHANG ◽  
SEN-JIANG YU
Keyword(s):  
Magnetron Sputtering ◽  
Internal Stress ◽  
Silicone Oil ◽  
Atomic Clusters ◽  
Vacuum Condition ◽  
Growth Time ◽  
Film System ◽  
Dc Magnetron Sputtering ◽  
Power Deposition ◽  
Sputtering Power

We report the experimental observations of large spatially disk-shaped patterns in an iron (Fe) film system deposited on silicone oil surfaces by a DC-magnetron sputtering method. These disk patterns form spontaneously during deposition and grow successively in vacuum condition after deposition. Their nucleation, growth and evolution are strongly dependent on the sputtering power, deposition period and growth time. The experiment indicates that they may result from the spontaneous organization and gathering of the Fe atoms and atomic clusters driven by the internal stress.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Voids Investigation of Amorphous Carbon Films Deposited by DC-Magnetron Sputtering: A Small Angle x-ray Scattering and Gas Thermal Effusion Study

1999 ◽  
Vol 593 ◽  
Author(s):  
F.L. Freire ◽  
L.G. Jacobsohn ◽  
D.F. Franceschini ◽  
S.S. Camargo
Keyword(s):  
Magnetron Sputtering ◽  
Amorphous Carbon ◽  
Small Angle ◽  
Ion Beam ◽  
Carbon Films ◽  
Dc Magnetron Sputtering ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

ABSTRACTAmorphous carbon films were deposited onto (100) Si crystals and onto ultra-pure Al foils by dc-magnetron sputtering with different Ar plasma pressures, from 0.17 to 1.4 Pa. We investigate the voids structure and the voids density in these films by means of small angle x-ray scattering (SAXS) and mass spectrometry of effused gases. The analysis of the effusion spectra provided clear evidence that films deposited at lower pressures are compact, while the films deposited at higher pressure present a more open structural arrangement, confirming density results obtained by using ion beam techniques. SAXS results reveal that the fraction of open volumes increases with the plasma pressure: a direct correlation between film density and open volume fraction is found. These different film microstructures could be explained by the existence of different bombarding regimes during film growth

Nano-Structured Amorphous Carbon Films Synthesised Using Decr Plasma

2001 ◽  
Vol 675 ◽  
Author(s):  
André Golanski ◽  
Dieter Grambole ◽  
Jean Hommet ◽  
Folker Herrmann ◽  
Philippe Kern ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Argon Plasma ◽  
Carbon Films ◽  
Plasma Pressure ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Si Substrates ◽  
Detection Analysis

ABSTRACTA Distributed Electron Cyclotron Resonance plasma reactor powered by a microwave generator operating at 2.45 GHz was used to deposit ta-C:H (Diamond-Like Carbon, DLC) thin films at RT. A graphite sputtering target immersed in an argon plasma was used as carbon source. The Ar plasma density was about 5×1010 cm-3. Single crystal <100> Si substrates were RF biased to a negative voltage of -80 V. Atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), nuclear reaction analysis (NRA) using the resonance at 6.385 MeV of the reaction: 15N + 1H-→ 12C + 4He + γ, elastic recoil detection analysis (ERDA) and Rutherford backscattering (RBS) were used to investigate the early phase of the growth. The morphology of the films grown at low pressure (0.3 mTorr) is shown to be dominated by stress-mediated nucleation leading to formation of basket-like clusters of circular hillocks 20 nm high surrounded by a planar, mostly sp2 bonded film ∼8 nm thick. With increasing plasma pressure the spatial frequency of the hillocks becomes random and the growth is dominated by the Stranski-Krastanov mode. The XPS data taken at decreasing emergence angles show that the structure of the hillocks is dominated by sp3 bonded carbon. The XPS argon signal disappears at 10° emergence angle indicating that integration of argon occurs mainly within the sp bonded regions. The NRA and ERDA analysis show that the amount of integrated hydrogen decreases with increasing substrate current density. RBS data indicate that increasing bias enhances argon integration.

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