On the Effects of the Thermal Treatment on the Structural, Mechanical and Tribological Properties of Amorphous Carbon-Nitrogen Films Deposited by Magnetron Sputtering

1997 ◽  
Vol 498 ◽  
Author(s):  
M. M. Lacerda ◽  
F. L. Freire
Keyword(s):  
Surface Roughness ◽  
Friction Coefficient ◽  
Magnetron Sputtering ◽  
Internal Stress ◽  
Amorphous Carbon ◽  
Rutherford Backscattering Spectrometry ◽  
Rf Magnetron Sputtering ◽  
Progressive Increase ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil

ABSTRACTAmorphous carbon-nitrogen films, a-CNx, deposited by rf-magnetron sputtering in N2 atmosphere were annealed in vacuum at temperatures between 300 and 700 °C. The annealing time was 30 minutes. The modifications on the film microstructure were monitored by infrared spectroscopy (IR), while the composition and the atomic density were determined by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA). The internal stress was determined by measuring the film-induced bending of the substrate and the hardness was measured by nanoindentation. Atomic force microscopy (AFM) provided the friction coefficient and the surface roughness. The ratio between nitrogen and carbon atomic concentration decreases for temperatures higher than 500 °C, whereas the film density increases with the annealing temperature: 40 % in the temperature range here studied. The behavior of the D and G Raman bands, IR active due to the nitrogen incorporation in the carbon network, suggests a progressive increase of the size of the graphite-like domains. The hardness of the as-deposited a-CNx film is around 2 GPa. However, both hardness and internal stress increase by a factor of three in samples annealed at 700 °C, while the surface roughness and the friction coefficient decrease by a factor of about two.

Mechanical and Tribological Properties of a-GeCx Films Deposited by DC-Magnetron Sputtering

1997 ◽  
Vol 505 ◽  
Author(s):  
L. G. Jacobsohn ◽  
D. C. Reigada ◽  
F. L. Freire ◽  
R. Prioli ◽  
S. I. Zanette ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Internal Stress ◽  
Rutherford Backscattering Spectrometry ◽  
Argon Plasma ◽  
Carbon Films ◽  
Elastic Recoil ◽  
Dc Magnetron Sputtering ◽  
Elastic Recoil Detection ◽  
Mechanical And Tribological Properties ◽  
Film Hardness

ABSTRACTAmorphous carbon-germanium films were grown by dc-magnetron sputtering at different argon plasma pressures ranging from 0.17 and 1.4 Pa. The water-cooled sample holder was grounded. The film thickness were typically 0.5 μm. The ratio between germanium and carbon atomic concentration ranges up to 2.8, as measured by Rutherford backscattering spectrometry (RBS). Elastic recoil detection technique was used to measure hydrogen contamination. The film hardness was measured by nanoindentation techniques and the internal stress was determined by the bending of the substrate. The incorporation of Ge reduces both the film hardness and the internal stress. Hardness and internal stress increases when the films are deposited in lower pressures. Atomic Force Microscopy (AFM) was used to measure the surface roughness, which was found to be insensitive to the pressure and to the Ge content. A possible influence of the thickness on the morphology of pure carbon films is discussed. The friction coefficient measured by AFM is independent on the film composition within experimental errors.

Correlation Between In Situ Optical Emission Spectroscopy in a Reactive O2 / AR RF Magnetron Sputtering Discharge and PZT Thin Film Composition

1997 ◽  
Vol 493 ◽  
Author(s):  
F. Ayguavives ◽  
P. Aubert ◽  
B. Ea-Kim ◽  
B. Agius
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Rf Magnetron Sputtering ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Film Composition

ABSTRACTLead zirconate titanate (PZT) thin films have been grown by rf magnetron sputtering on Si substrates from a metallic target of nominal composition Pb1.1(Zr0.4 Ti0.6 in a reactive argon / oxygen gas mixture. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements show clearly a correlation between the evolution of characteristic atomic emission line intensities (Zr - 386.4 nm, Ti - 399.9 nm, Pb - 405.8 nm and O - 777.2 nm) and the thin-film composition determined by a simultaneous use of Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA).

Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method

2006 ◽  
Vol 321-323 ◽  
pp. 1336-1339
Author(s):  
Won Seok Choi ◽  
Young Park ◽  
Jin Hyo Boo ◽  
Junsin Yi ◽  
Byung You Hong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Ceramic Capacitor ◽  
Diffraction Patterns ◽  
Lower Temperature

We investigated the structural and electrical properties of the 0.5% Ce-doped Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm for the MLCC (Multilayer Ceramic Capacitor) application. Ce-doped BZT films were prepared on Pt/Ti/SiO2/Si substrates by a RF magnetron sputtering system as a function of Ar/O2 ratio and substrate temperature. X-ray diffraction patterns were recorded for the samples deposited with three different substrate temperatures. The thickness and the surface roughness of the films deposited with different Ar/O2 ratios were measured. The oxygen gas, which was introduced during the film deposition, had an influence on the growth rate and the roughness of the film. The surface roughness and dielectric constant of the Ce-doped BZT film varied with Ar to O2 ratios (5:1, 2:1, and 1:1) from 1.21 nm to 2.33 nm and 84 to 149, respectively. The Ce-doped BZT film deposited at lower temperature has small leakage current and higher breakdown voltage.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Effect of Sputtering Pressure on Optimization of Titanium Dioxide Nanostructures Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 667 ◽  
pp. 452-457 ◽  
Author(s):  
N.A.M. Asib ◽  
Mohamed Zahidi Musa ◽  
Saifollah Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Surface Roughness ◽  
Titanium Dioxide ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Transmission Spectra ◽  
Cross Sectional ◽  
Vis Spectroscopy ◽  
Sputtering Pressure ◽  
Tio2 Nanostructures

Titanium dioxide (TiO2) nanostructures were deposited on glass substrate by Radio Frequency (RF) magnetron sputtering. The samples deposited at various sputtering pressures and annealed at 723 K, were characterized using Atomic Force Microscope (AFM) to observe the surface morphology and topology, roughness properties and cross-sectional of TiO2 nanostructures, Field Emission Scanning Electrons Microscope (FESEM) to observe the particle sizes of TiO2 nanostructures and UV-vis spectroscopy to record the UV-vis transmission spectra. The aim of this paper is to determine which parameter of sputtering pressures influence the optimization of TiO2 nanostructures. AFM images show that the surface roughness of the samples decreases as the working pressures of sputtering increases. From FESEM images, it can be deduced that the higher the sputtering pressure, the smaller the particle size is. All the samples are highly transmittance with an average transmittance higher than 80% in the visible region as recorded by UV-vis transmission spectra. The relatively high transmittance of the sample indicates its low surface roughness and good homogeneity. For optimum TiO2 nanostructures deposited at various RF pressures it has the lowest surface roughness and the smallest TiO2 size particles with the indirect optical band gap of 3.41 eV.

Characteristics of Palladium Doped Amorphous Carbon Films Fabricated by Unbalanced Magnetron Sputtering System

2021 ◽  
Vol 16 (6) ◽  
pp. 905-910
Author(s):  
Yong Seob Park ◽  
Young-Baek Kim ◽  
Sung Hwan Hwang ◽  
Jaehyeong Lee
Keyword(s):  
Friction Coefficient ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Amorphous Carbon ◽  
Closed Field ◽  
Hydrogenated Amorphous Carbon ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Dc Bias ◽  
Hydrogenated Amorphous

Generally, hydrogenated amorphous carbon (a-C:H) has been shown to have a low friction coefficient, high hardness, and low abrasive wear rate. In this study, Pd doped hydrogenated amorphous carbon (a-C:H:Pd) fabricated by the closed-field unbalanced magnetron sputtering (CFUBMS) system with two targets of carbon and palladium in Ar/C2H2 plasma. The tribological and lubricant characteristics for a-C:H:Pd fabricated with various DC bias voltage from 0 to −200 V were investigated. We obtained a hardness up to 27.5 GPa and friction coefficient lower than 0.1. The atomic percentage of Pd related to the lubricant properties increased up to 22% at −200 V. In the results, the Pd doping in the a-C:H films improved the tribological and lubricant properties. The friction coefficient value of a-C:H:Pd films was decreased, the hardness and elastic modulus were increased, and also the adhesion properties was improved with the increase of negative DC bias voltage.

A Study of the In Situ Epitaxial Growth of the 123 Ybco Films from a Stoichiometric Target by Rf Magnetron Sputtering

1989 ◽  
Vol 169 ◽  
Author(s):  
R. L. Meng ◽  
Y. Q. Wang ◽  
Y. Y. Sun ◽  
Li Gao ◽  
P. H. Hor ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Transition Width ◽  
Ybco Films ◽  
Synthesis Parameters ◽  
Better Than

AbstractThe synthesis parameters have been systematically examined for the in situ growth of high temperature superconducting Y‐Ba‐Cu‐0 thin films from a stoichiometric target by rf magnetron sputtering. By properly adjusting the deposition temperature, the total sputtering (O2+Ar)‐pressure and the O2‐partial pressure, we have reproducibly obtained 123 YBCO films with a zero resistivity temperature Tcz = 84 K and a transition width of 3 K°. The films so obtained have excellent surface morphology and a surface roughness better than ∼ 5 nm.

Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Magnetron Sputter Deposition ◽  
Ar Gas

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

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