Characterization of Transparent Conductors in Indium Zinc Oxide and Their Application to Thin-Film Transistor Liquid-Crystal Displays

1998 ◽  
Vol 508 ◽  
Author(s):  
H. Takatsuji ◽  
T. Hiromori ◽  
K. Tsujimoto ◽  
S. Tsuji ◽  
K. Kurodac ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Indium Tin Oxide ◽  
Amorphous Material ◽  
Thin Film Transistor ◽  
Amorphous Region ◽  
Transparent Conductors ◽  
Plan View ◽  
Indium Zinc Oxide ◽  
Transmission Electron ◽  
Sputter Deposited

AbstractInvestigation of the properties of indium zinc oxide (IZO) thin films sputter-deposited on LCD-grade glass substrate showed that the resistivity of an IZO film decreases markedly as the substrate temperature is increased from room-temperature to 120°C. This phenomenon can be attributed to the growth of In-Zn intermetallic compounds in the amorphous region as a result of annealing. The compound growth was observed by plan-view transmission electron microscopy.Although the transmittance and resistivity of IZO are inferior to those of indium-tin oxide, these disadvantages do not present any difficulties in the practical use of IZO for designing TFT-LCDs. Since IZO is an amorphous material, we propose a five-mask process with this characteristic.

Structural Investigation of Photoluminescent Porous Si by Transmission Electron Microscopy

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Shih ◽  
K. H. Jung ◽  
D. L. Kwong
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Structural Investigation ◽  
Amorphous Material ◽  
Porous Si ◽  
Plan View ◽  
Mesh Structure ◽  
Transmission Electron ◽  
Minimal Damage

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.

Capillary-Force-Pattern Formation of Indium-Zinc-Oxide Thin-Film Transistor

2019 ◽  
Vol 19 (4) ◽  
pp. 2179-2182
Author(s):  
Hyunji Shin ◽  
Dongwook Kim ◽  
Jaehoon Park ◽  
Seong-Ho Song ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Pattern Formation ◽  
Capillary Force ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

2008 ◽  
Vol 29 (12) ◽  
pp. 1309-1311 ◽  
Author(s):  
Jang Yeon Kwon ◽  
Kyoung Seok Son ◽  
Ji Sim Jung ◽  
Tae Sang Kim ◽  
Myung Kwan Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Resolution ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Bottom Gate

P-67: Wet Etching of Gallium Indium Zinc Oxide (GIZO) Semiconductor for Thin Film Transistor Application

2008 ◽  
Vol 39 (1) ◽  
pp. 1439 ◽  
Author(s):  
Jong Hyun Seo ◽  
Sang-Hyuk Lee ◽  
Bo-Hyun Seo ◽  
Jae-Hong Jeon ◽  
HeeHwan Choe ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Wet Etching ◽  
Indium Zinc Oxide

Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor

2010 ◽  
Vol 87 (10) ◽  
pp. 2019-2023 ◽  
Author(s):  
Ai Hua Chen ◽  
Hong Tao Cao ◽  
Hai Zhong Zhang ◽  
Ling Yan Liang ◽  
Zhi Min Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Layer Thickness ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Channel Layer ◽  
Indium Zinc Oxide

Enhanced performance of indium zinc oxide thin film transistor by yttrium doping

2013 ◽  
Vol 284 ◽  
pp. 397-404 ◽  
Author(s):  
Chu-Chi Ting ◽  
Shiep-Ping Chang ◽  
Wei-Yang Li ◽  
Ching-Hua Wang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Yttrium Doping
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