Ion Implantation At Elevated Temperatures
Keyword(s):
ABSTRACTA kinetic model has been developed to investigate the synergistic effects of radiation-enhanced diffusion, radiation-induced segregation and preferential sputtering on the spatial redistribution of implanted solutes during implantation at elevated temperatures. Sample calculations were performed for Al+ and Si+ ions implanted into Ni. With the present model, the influence of various implantation parameters on the evolution of implant concentration profiles could be examined in detail.
1986 ◽
Vol 1
(2)
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pp. 251-267
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1979 ◽
Vol 85-86
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pp. 1085-1089
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1985 ◽
Vol 43
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pp. 338-339
1975 ◽
Vol 56
(2)
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pp. 125-135
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