Deposition and Characterization of Carbon Nitride Films by Laser Processed Methods

1998 ◽  
Vol 526 ◽  
Author(s):  
Ashok Kumar ◽  
R. Alexandrescu ◽  
Michael A. George

AbstractLaser assisted methods such as laser physical vapor deposition (LPVD) and laser induced chemical vapor deposition (LCVD) have been utilized to grow carbon nitride (CNx) films on various substrates. It has been shown that the both techniques produce good quality thin films of CNx. In LPVD, a laser beam (λ= 248 nm) has been used to ablate the pyrolytic graphite target in nitrogen atmosphere, where as CO2 laser was to irradiate carbon-nitrogen containing mixtures such as C2H2/N2O/NH3 in LCVD method. A comparative analysis will be presented in terms of structural properties of CNx films prepared by both techniques.

1998 ◽  
Vol 555 ◽  
Author(s):  
Ashok Kumar ◽  
R. Alexandrescu

AbstractWe have investigated the growth of carbon nitride (CNx) coatings on various substrates using laser assisted methods such as pulsed laser deposition (PLD) and laser chemical vapor deposition (LCVD). It has been shown that the both techniques produce good quality thin films of CNx. In PLD, a laser beam (λ= 248 nm) has been used to ablate the pyrolytic graphite target in nitrogen atmosphere, where as CO2 laser was used to irradiate carbon-nitrogen containing mixtures such as C2H2/N20/NH3 in LCVD method. A comparative analysis will be presented in terms of structural properties of CNx films prepared by both techniques.


2000 ◽  
Vol 9 (7) ◽  
pp. 545-549
Author(s):  
Zhang Yong-ping ◽  
Gu You-song ◽  
Chang Xiang-rong ◽  
Tian Zhong-zhuo ◽  
Shi Dong-xia ◽  
...  

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.


RSC Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 4867-4871 ◽  
Author(s):  
Mingxian Wang ◽  
Weiguang Wang ◽  
Zhao Li ◽  
Xuejian Du ◽  
Xianjin Feng ◽  
...  

TiO2 thin films with anatase structure have been prepared on [LaAlO3]0.3[SrAl0.5Ta0.5O3]0.7 (LSAT) (001) substrates by metalorganic chemical vapor deposition (MOCVD) in the substrate temperature range of 500–650 °C.


Sign in / Sign up

Export Citation Format

Share Document