Self-Diffusion in Isotopically Controlled Heterostructures of Elemental and Compound Semiconductors

1998 ◽  
Vol 527 ◽  
Author(s):  
H. Bracht ◽  
E. E. Haller ◽  
K. Eberl ◽  
M. Cardona ◽  
R. Clark-Phelps
Keyword(s):  
Temperature Dependence ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Activation Enthalpy ◽  
Exponential Factor ◽  
Self Diffusion ◽  
Diffusion Studies ◽  
Exponential Factors ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTWe report self-diffusion studies of silicon between 855 and 1388°C in highly enriched epitaxial 28Si layers. Diffusion profiles of 30Si and 29Si are determined with high resolution secondary ion mass spectrometry (SIMS). The temperature dependence of the Si self-diffusion coefficients is accurately described with an activation enthalpy of 4.76 eV and a pre-exponential factor of 560 cm2s-1. The single activation enthalpy indicates that Si self-interstitials dominate self-diffusion over the whole temperature range investigated. Self- and interdiffusion in buried Al71GaAs/Al69GaAs/71GaAs isotope heterostructures with different Al composition is measured between 800 and 1160°C. Ga self-diffusion in AlGaAs and interdiffusion of Al and Ga at the AlGaAs/GaAs interface show that Ga diffusion decreases with increasing Al composition and that the interdiffusion coefficient depends linearly on Al concentration. Furthermore Al is found to diffuse more rapidly into GaAs than Ga diffuses in GaAs. The temperature dependence of Ga and Al diffusion in GaAs and of Ga diffusion in AlGaAs is described by a single activation enthalpy in the range of 3.6±0.1 eV, but by different pre-exponential factors. Differences found for Ga and Al diffusion in GaAs and for Ga diffusion in AlGaAs with different Al concentrations are discussed.

Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon Layer

2001 ◽  
Vol 669 ◽  
Author(s):  
Yukio Nakabayashi ◽  
Hirman I. Osman ◽  
Toru Segawa ◽  
Kazunari Toyonaga ◽  
Satoru Matsumoto ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Temperature Dependence ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Intrinsic Diffusion Coefficient ◽  
Intrinsic Diffusion ◽  
Self Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTSilicon self–diffusion coefficients were measured in intrinsic and extrinsic silicon from870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si isobtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.

scholarly journals Transport and Electromechanical Properties of Ca3TaGa3Si2O14 Piezoelectric Crystals at Extreme Temperatures

MRS Advances ◽  
2019 ◽  
Vol 4 (09) ◽  
pp. 515-521
Author(s):  
Yuriy Suhak ◽  
Ward L. Johnson ◽  
Andrei Sotnikov ◽  
Hagen Schmidt ◽  
Holger Fritze
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Tone Burst ◽  
Total Conductivity ◽  
Transport Mechanisms ◽  
Electromechanical Properties ◽  
Self Diffusion ◽  
Oxygen Ion ◽  
Piezoelectric Strain ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTTransport mechanisms in structurally ordered piezoelectric Ca3TaGa3Si2O14 (CTGS) single crystals are studied in the temperature range of 1000-1300 °C by application of the isotope 18O as a tracer and subsequent analysis of diffusion profiles of this isotope using secondary ion mass spectrometry (SIMS). Determined oxygen self-diffusion coefficients enable calculation of oxygen ion contribution to the total conductivity, which is shown to be small. Since very low contributions of the cations have to be expected, the total conductivity must be dominated by electron transport. Ion and electron conductivities are governed by different mechanisms with activation energies (1.9±0.1) eV and (1.2±0.07) eV, respectively. Further, the electromechanical losses are studied as a function of temperature by means of impedance spectroscopy on samples with electrodes and a contactless tone-burst excitation technique. At temperatures above 650 °C the conductivity-related losses are dominant. Finally, the operation of CTGS resonators is demonstrated at cryogenic temperatures and materials piezoelectric strain constants are determined from 4.2 K to room temperature.

First Study of Iron Self-Diffusion in Fe2O3 Single Crystals by SIMS

2005 ◽  
Vol 237-240 ◽  
pp. 277-281 ◽  
Author(s):  
Antônio Claret Soares Sabioni ◽  
Antônio Márcio J.M. Daniel ◽  
W.A.A. Macedo ◽  
M.D. Martins ◽  
Anne Marie Huntz ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Stable Isotope ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Reliable Data ◽  
Oxygen Atmosphere ◽  
Self Diffusion ◽  
Secondary Ion

Iron bulk self-diffusion coefficients were measured in Fe2O3 single crystals using an original methodology based on the utilization of 57Fe stable isotope as iron tracer and depth profiling by secondary ion mass spectrometry (SIMS). The iron self-diffusion coefficients measured along c-axis direction, between 900 and 1100o C, in oxygen atmosphere, can be described by the following Arrhenius relationship: D(cm2/s)= 5.2x106 exp [-510 (kJ/mol)/RT], and are similar to reliable data available in the literature, obtained by means of radioactive techniques.

Diffusion of Arsenic in Single Crystalline CoSi2

1995 ◽  
Vol 402 ◽  
Author(s):  
A. Pisch ◽  
J. Cardenas ◽  
B. G. Svensson ◽  
C. S. Petersson
Keyword(s):  
Diffusion Coefficient ◽  
Secondary Ion Mass Spectrometry ◽  
Lattice Diffusion ◽  
High Dose ◽  
Exponential Factor ◽  
Self Diffusion ◽  
Different Temperatures ◽  
Secondary Ion ◽  
Self Diffusion Coefficient ◽  
Different Doses

AbstractThe lattice diffusion of arsenic in CoSi2 has been studied in the temperature range from 750°C to 950°C. Two types of bulk samples were used: single crystals prepared by a modified Czochralski pulling technique from a radio frequency levitated melt and polycrystals synthesised by quenching from the melt. The latter samples were subsequently annealed in vacuum at 900°C and displayed grain sizes in the millimetre range. Starting from an ion implanted arsenic profile with two different doses (5·1014 and 5·1015 cm−2) the concentration versus depth profiles after annealing at different temperatures and different times were measured using secondary ion mass spectrometry (SIMS). Contrary to previous studies by other authors substantial diffusion has been observed with an activation energy of 3.3 eV and a pre-exponential factor of 7.37 cm2/s for the diffusion coefficient. These values are very close to the self diffusion coefficient of Si in CoSi2 suggesting that the As atoms migrate via thermal vacancies on nearest neighbour lattice sites by a similar type of mechanism as the Si (and Co) atoms. In the high dose implanted polycrystalline samples arsenic precipitation occurred which gives an estimate for the solid solubility in the 1019 atoms/cm3 range at 800 °C.

Oxygen Self-Diffusion in Silicon Dioxide: Effect of the Si/SiO2 Interface

2006 ◽  
Vol 258-260 ◽  
pp. 554-561 ◽  
Author(s):  
Masashi Uematsu ◽  
Marika Gunji ◽  
Kohei M. Itoh
Keyword(s):  
Mass Spectrometry ◽  
Silicon Dioxide ◽  
Oxygen Isotopes ◽  
Secondary Ion Mass Spectrometry ◽  
Oxidation Time ◽  
Diffusion Region ◽  
Sio2 Surface ◽  
Self Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

The effect of the SiO2/Si interface on oxygen self-diffusion in SiO2 during thermal oxidation was investigated using oxygen isotopes. A Si18O2 layer was first grown in 18O2 and then the sample was reoxidized in 16O2 at 900 ~ 1100 °C. The O diffusion in SiO2 during the 16O2 oxidation was investigated by secondary ion mass spectrometry (SIMS) measurements. Near the SiO2/Si interface, a significant broadening of the 18O profile toward the newly grown Si16O2 was observed. This 18O diffusion became slower with oxidation time and hence with increasing distance between 18O diffusion region and the interface. This distance-dependent 18O self-diffusion was simulated taking into account the effect of SiO generated at the interface upon oxidation and diffusing into SiO2 to enhance O self-diffusion. The simulation fits the SIMS profiles and shows that the SiO diffusion is greatly retarded by the oxidation with O2 from the oxygen-containing atmosphere and that the O self-diffusion therefore becomes distance-dependent. In addition, near the SiO2 surface, 16O diffusion profiles develop with the 16O2 oxidation time from the surface into the initially grown Si18O2. The integrated surface 16O concentration increases with oxidation time and the SiO from the interface affects the O self-diffusion near the surface as well.

Bulk Diffusion of Homovalent Atomic Probes of Vanadium and Niobium in Single Crystals of Tungsten

2012 ◽  
Vol 330 ◽  
pp. 1-10 ◽  
Author(s):  
S.M. Klotsman ◽  
G.N. Tatarinova ◽  
Alexander N. Timofeev
Keyword(s):  
Single Crystals ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Volume Diffusion ◽  
Bulk Diffusion ◽  
Self Diffusion ◽  
Arrhenius Dependence ◽  
The Difference ◽  
Defect Interactions ◽  
Secondary Ion

The Volume Diffusion of Homovalent Atomic Probes (APs) from the VB Group of the Periodic Ta-Ble of Elements (PTE) – V and Nb in W Single Crystals Has Been Studied by Using the Method of Secondary Ion Mass Spectrometry (SIMS). the Parameters of the Arrhenius Dependence of the Coefficients DV of Vanadium Volume Diffusion in W Have Been Measured: (D0)V = (1.3  0.4) X 10-4 M2s-1 and QV = (564 ± 6) Kj/mol. the Parameters (D0,Q)Nb of the Bulk Diffusion of Nb Aps in W Have Been Estimated with the Help of Several Measured Coefficients Dnb and the Empirical Correlation [1,2]: (D = DWW)(Tm)W: the Diffusion Coefficients of Substitutional Non-Magnetic 5d-Aps Coincide with the Self-Diffusion Coefficients in W at its Melting Point (Tm)W. the Enthalpies Qnb,Ta of the Bulk Diffusion of Non-Magnetic (nm) Homovalent Aps from the VB Group of PTE – Nb and Ta [3] Also Coincide with the Relaxation Volumes vacVBAPs of Complexes “vacancies-VB Aps” in the W Lattice. Electron Contributions (EDN)vacVBAPs to the Energies Evacvbaps of Interaction of Point Defects in Complexes “vacancies- VB Nm- Aps” Are Lower than in Complexes “vacancies-IVB Nm- Aps” [4]. the Dependence of {EDN(n)}vacVBAPs the Electron Contributions (EDN)vacVBAPs on the Difference of N Numbers of Periods of PTE the Deviation of Contributions (EDN)vacVAPs for Vanadium Aps to En-Ergies Evacvaps of their Interaction in Complexes “vacancy-VAP” Has Been Determined. this Devi-Ation Is Conditioned by the Contribution of the Exchange Energy (Eexch)VAP of Vanadium to the En-Ergy Evacvaps of the Point-Defect Interactions in the Complex “vacancy-VAP”.

Bulk Diffusion of Homovalent Non-Magnetic Atomic Probes of Titanium and Zirconium in Tungsten Single Crystals

2011 ◽  
Vol 319-320 ◽  
pp. 1-11 ◽  
Author(s):  
S.M. Klotsman ◽  
G.N. Tatarinova ◽  
Alexander N. Timofeev
Keyword(s):  
Single Crystals ◽  
Point Defects ◽  
Diffusion Coefficients ◽  
Periodic Table ◽  
Secondary Ion Mass Spectrometry ◽  
Volume Diffusion ◽  
Bulk Diffusion ◽  
The Self ◽  
Self Diffusion ◽  
Secondary Ion

The bulk diffusion of homovalent non-magnetic atomic probes (APs) from the IVB group of the periodic table of elements (PTE) – Ti and Zr in tungsten single crystals was investigated by sec-tioning, using secondary ion mass spectrometry (SIMS). The Arrhenius dependences had the fol-lowing parameters: DWTi - (D0)WTi = (3.00.4 ) x 10-4 m2s-1, enthalpy QWTi = (576 ± 9) kJ/mole; DWZr - (D0)WZr = (2.3  0.6) x 10-4 m2s-1, QWZr = (561 9) kJ/mole. The measured parameters (D0,Q)WTi,Zr of diffusion of Ti and Zr atomic probes (APs) in W are in accord with the empirical correlation: the diffusion coefficients of the substitutional APs coincide with the self-diffusion coefficients in W at (Tm)W – its melting temperature. Enthalpies QWTi,Zr,Hf of the volume diffusion of homovalent non-magnetic APs of the IVB group of periodic table of elements (PTE) - Ti, Zr and Hf increase with the decrease of relaxation volumes of the complexes «vacancy-IVBAP» in W lattice. The energies (E)WvacIVBAP of elastic relaxation of the complexes «vacancy-IVBAP» in W lattice were estimated. Electron contributions EDN to the energies EWvacIVBAP of interaction of the point defects in complexes «vacancy-IVBAP» increase relative to value EWvacIIIBAP of interac-tion of the point defects in complexes «vacancy-IIIBAP» with the growth of d-electrons number in comparison with the complexes «vacancy-IIIBAP».

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