Multiscale Post-Seismic Deformation Based on cGNSS Time Series Following the 2015 Lefkas (W. Greece) Mw6.5 Earthquake

In the present work, a multiscale post-seismic relaxation mechanism, based on the existence of a distribution in relaxation time, is presented. Assuming an Arrhenius dependence of the relaxation time with uniform distributed activation energy in a mesoscopic scale, a generic logarithmic-type relaxation in a macroscopic scale results. The model was applied in the case of the strong 2015 Lefkas Mw6.5 (W. Greece) earthquake, where continuous GNSS (cGNSS) time series were recorded in a station located in the near vicinity of the epicentral area. The application of the present approach to the Lefkas event fits the observed displacements implied by a distribution of relaxation times in the range τmin ≈3.5 days to τmax ≈350 days.

Hysteresis of grain boundary mobility due to grain boundary phase transitions.

The paper presents experimental results of studying the motion of individual special tilt grain boundaries in the form of a half-loop with a facet. There is a deviation of temperature dependence of grain boundary mobility from Arrhenius dependence. This behavior is interpreted as a manifestation of grain boundary mobility hysteresis due to the faceting-defaceting phase transition. The values of the temperature of the faceting - defaceting phase transitions and the hysteresis parameters of grain boundary mobility were determined experimentally for the studied individual boundaries.

Does the single-walled carbon nanotube affect the rate constant of binding of biotin to streptavidin? Molecular dynamics simulation perspective

The interaction of biotin and streptavidin in the presence and absence of a carbon nanotube was studied by molecular dynamics simulation. With respect to the Arrhenius dependence of the rate constants with temperature, those of streptavidin–biotin complex formation ([Formula: see text]) and streptavidin–biotin complex dissociation ([Formula: see text]) were calculated from molecular dynamics simulation trajectories. Nanotube has reduced the amount of and k1and k1. However, the biotin position in streptavidin does not change much. The results obtained from MMPBSA calculations show that the contribution of the van der Waals forces to both systems (in the absence and presence of the nanotube) was greater than that of electrostatic forces. The presence of the nanotube also led to the reduction of van der Waals and electrostatic forces in the interaction of biotin with streptavidin. However, this reduction was greater for electrostatic forces. In the absence of a nanotube, there are four hydrogen bonds between streptavidin and biotin, which are related to the residues Ser27, Tyr43, Ser45 and Ser88. In the presence of the nanotube, the hydrogen bonding of biotin with Ser45 is removed.

Effect of Liquid-phase Siliconizing Process on Silicon Diffusion Behavior in Mo Matrix

MoSi2 functionally graded coating on Mo substrate is prepared by liquid-phase siliconizing technology. The SEM, GDS and XRD analysis shows that the silicon content in gradient layer appears in three changing regularities. Along the Mo substrate to the surface of the coating, the phase composition of gradient coating changes as follows: Mo → transition layer Mo (main phase) + Mo3Si + Mo5Si3 → intermediate layer MoSi2 → surface layer MoSi2 (main phase) + Si. According to the Si-Mo diffusion couple and Arrhenius equation, the activation energy (Q) was obtained as 430 kJ·mol−1, and the Arrhenius dependence of D on temperature can be described as D = 4.9 × 10−3 exp(−430000/RT) m2/s. The diffusion temperature has an important influence on silicon diffusion coefficient. As the diffusion temperature increases, silicon diffusion coefficient is also gradually increasing.

Bulk Diffusion of Homovalent Atomic Probes of Vanadium and Niobium in Single Crystals of Tungsten

The Volume Diffusion of Homovalent Atomic Probes (APs) from the VB Group of the Periodic Ta-Ble of Elements (PTE) – V and Nb in W Single Crystals Has Been Studied by Using the Method of Secondary Ion Mass Spectrometry (SIMS). the Parameters of the Arrhenius Dependence of the Coefficients DV of Vanadium Volume Diffusion in W Have Been Measured: (D0)V = (1.3  0.4) X 10-4 M2s-1 and QV = (564 ± 6) Kj/mol. the Parameters (D0,Q)Nb of the Bulk Diffusion of Nb Aps in W Have Been Estimated with the Help of Several Measured Coefficients Dnb and the Empirical Correlation [1,2]: (D = DWW)(Tm)W: the Diffusion Coefficients of Substitutional Non-Magnetic 5d-Aps Coincide with the Self-Diffusion Coefficients in W at its Melting Point (Tm)W. the Enthalpies Qnb,Ta of the Bulk Diffusion of Non-Magnetic (nm) Homovalent Aps from the VB Group of PTE – Nb and Ta [3] Also Coincide with the Relaxation Volumes vacVBAPs of Complexes “vacancies-VB Aps” in the W Lattice. Electron Contributions (EDN)vacVBAPs to the Energies Evacvbaps of Interaction of Point Defects in Complexes “vacancies- VB Nm- Aps” Are Lower than in Complexes “vacancies-IVB Nm- Aps” [4]. the Dependence of {EDN(n)}vacVBAPs the Electron Contributions (EDN)vacVBAPs on the Difference of N Numbers of Periods of PTE the Deviation of Contributions (EDN)vacVAPs for Vanadium Aps to En-Ergies Evacvaps of their Interaction in Complexes “vacancy-VAP” Has Been Determined. this Devi-Ation Is Conditioned by the Contribution of the Exchange Energy (Eexch)VAP of Vanadium to the En-Ergy Evacvaps of the Point-Defect Interactions in the Complex “vacancy-VAP”.

Molten Salt Synthesis of Anisotropy BaBi4Ti4O15 Powders in K2SO4-Na2SO4 Flux

Anisotropic BaBi4Ti4O15 powder was synthesized by a molten salt synthesis (MSS) method in K2SO4-Na2SO4flux and the effects of different process parameters such as calcining temperature, and ratio of salt to reactant (R) on the phase formation and morphology of anisotropic BaBi4Ti4O15particles were also investigated. The as-synthesized powder calcined at 850-950°C exhibits a single tetragonal BaBi4Ti4O15phase. The morphology of BaBi4Ti4O15powder could be adjusted by changing the synthesis conditions. The average particle size (APS) of BaBi4Ti4O15powder increased with R changing from 0.8 to 1.0, while it decreased with further increasing of R to 1.2. In addition, the APS increased with increasing calcining temperature and it showed an Arrhenius dependence on the temperature. The corresponding apparent activation energy for particle growth is 31.9kJ/mol for calcining temperature of 850-1000°C.

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

Binary frontal polymerization: Velocity dependence on initial composition

Frontal polymerization is a mode of polymerization in which a localized zone of reaction propagates through the coupling of thermal diffusion and the Arrhenius dependence of the reaction rate. The dependence of the front propagation velocity on the initial composition has been determined in initially miscible binary systems of a free-radically cured diacrylate and an amine- or cationically cured epoxy resin. A minimum of the velocity as a function of the monomer mole fraction is observed if the two polymerizations occur independently. Excellent agreement with an analytical description was found with the diacrylate and an amine-cured epoxy but not for a diacrylate and a cationically cured one because of the effect of HCl impurities on the peroxide.

Phosphorus diffusion in silicon; influence of annealing conditions

ABSTRACTPhosphorus diffusion has been studied in both pure epitaxially grown silicon and Cz silicon, with a substantial amount of impurities like oxygen and carbon. Anneals have been performed in different atmospheres, N2 and dry O2, as well as in vacuum, at temperatures between 810 – 1100°C. Diffusion coefficients extracted from these anneals show no difference for the P diffusion in the epitaxially grown or the Cz silicon. The diffusion coefficients follow an Arrhenius dependence with the activation energy Ea=2.74±0.07 eV and a prefactor D0 = (8±5)×10−4 cm2/s. These parameters differ considerably from the previously reported and widely accepted values (3.66 eV and 3.84 cm2/s, respectively). However, vacuum anneals of the same samplesresult in values close to this 3.6 eV diffusion mode. Furthermore, control anneals of boron doped samples, with similar design as the phosphorus samples, suggest the same trend for boron diffusion in silicon – lower versus higher values of activation energies for nitrogen and vacuum anneals, respectively. These results are discussed in terms of the concentration of Si self-interstitials mediating the diffusion of phosphorus and boron.

Photoconductivity of Discotic Liquid Crystals Derived from A Long-Chain Tetraphenylporphyrin

ABSTRACTPhotoconductivity of a mesogenic tetraphenylporphyrin (TPP) is shown in relation to the mesomorphic phase transition behavior. The TPP mesogen shows two types of mesophases having smectic-like order (lamellar mesophases : DL and DLC phases named in this work) and the photocurrent changes stepwise at the phase transitions with non-Arrhenius dependence whilst the darkcurrent tends to be Arrhenius. The hole mobility was measured for the random domain cell and was found to be faster than 10−4 cm2v−1sec−1 in the mesophases. The cell used for the photocurrent measurements was a sandwich-type one using two ITO glass slides as electrtodes and show rectification behavior for the crystal and the low-temperature mesophase (DLC) in contrast to non-rectification of photocurrent in the high-temperature mesophase (DL). These properties of charge carrier migration as an electronic process are profoundly related to molecular order as well as molecular motions in mesophase.