Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
A.E. Yunovich ◽  
V.E. Kudryashov ◽  
A..N. Turkin ◽  
A.N. Kovalev ◽  
F.I. Manyakhin
Keyword(s):  
Quantum Wells ◽  
Large Scale ◽  
Light Emitting Diodes ◽  
Spectral Band ◽  
High Energy ◽  
Model Fit ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Wide Range ◽  
Tunnel Effects

AbstractElectroluminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with single and multiple quantum wells (QWs) are analyzed by models of radiative recombination in 2D-structures with band tails. Equations of the model fit spectra quite good in a wide range of currents. Parameters of the fit are discussed and compared for single and multiple QWs. Tunnel effects play a sufficient role in blue LEDs with single QWs at low currents; they can be neglected in LEDs with multiple QWs. A new spectral band was detected at the high energy side of the spectra of green LEDs with multiple QWs; it is attributed with large scale inhomogenities of In distribution in InGaN QWs.)

scholarly journals Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 659-664
Author(s):  
A.E. Yunovich ◽  
V.E. Kudryashov ◽  
A.N. Turkin ◽  
A.N. Kovalev ◽  
F.I. Manyakhin
Keyword(s):  
Quantum Wells ◽  
Large Scale ◽  
Light Emitting Diodes ◽  
Spectral Band ◽  
High Energy ◽  
Model Fit ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Wide Range ◽  
Tunnel Effects

Electroluminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with single and multiple quantum wells (QWs) are analyzed by models of radiative recombination in 2D-structures with band tails. Equations of the model fit spectra quite good in a wide range of currents. Parameters of the fit are discussed and compared for single and multiple QWs. Tunnel effects play a sufficient role in blue LEDs with single QWs at low currents; they can be neglected in LEDs with multiple QWs. A new spectral band was detected at the high energy side of the spectra of green LEDs with multiple QWs; it is attributed with large scale inhomogenities of In distribution in InGaN QWs.*)

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Injection Efficiency ◽  
Light Emitting

Control of Barrier Width in Perovskite Multiple Quantum Wells for High Performance Green Light–Emitting Diodes

2018 ◽  
Vol 7 (3) ◽  
pp. 1801575 ◽  
Author(s):  
Maotao Yu ◽  
Chang Yi ◽  
Nana Wang ◽  
Liangdong Zhang ◽  
Renmeng Zou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Barrier Width ◽  
Light Emitting

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

scholarly journals GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Si Substrates

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 3 ◽  
Author(s):  
A. E. Yunovich ◽  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
A. Kovalev ◽  
F. Manyakhin
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Luminescence Spectra ◽  
Multiple Quantum ◽  
Tunnel Current ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Low Probability

Luminescence spectra of Light Emitting Diodes (LEDs) with Multiple Quantum Wells (MQWs) were studied at currents J = 0.15 μA - 150 mA. A high quantum efficiency at low J is caused by a low probability of the tunnel current J (which is maximum at Jm ≈ 0.5-1.0 mA). J(V) curves were measured in the range J= 10−12-10−1 A; at J > 10−3A they may be approximated by a sum of four parts: V= φk+ mkT·[ln(J/J0)+(J/J1)0.5] + J·Rs. The part V ~ (J/J1)0.5is the evidence of a double-injection into i-layers near MQWs. Their presence is confirmed by capacitance measurements. An overflow of carriers through the MQW causes a lower quantum efficiency at high J. A model of a 2D-density of states with exponential tails fits the spectra. The value of T in the active layer was estimated. A new band was detected at high J; it can be caused by non-uniformity of In content in MQWs.

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

2011 ◽  
Vol 20 (9) ◽  
pp. 098503 ◽  
Author(s):  
Tai-Ping Lu ◽  
Shu-Ti Li ◽  
Kang Zhang ◽  
Chao Liu ◽  
Guo-Wei Xiao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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