Microstructure of Swift Heavyion Irradiated MgAl204 Spinel

AbstractPlan view and cross-section transmission electron microscopy was used to investigate the microstructure of magnesium aluminate spinel (MgAl2O4) following room temperature irradiation with either 430 MeV Kr, 614 MeV Xe, or 72 MeV I ions. The fluences ranged from 1×1016/m2 (single track regime) to 1×1020/m2. Destruction of the ordered spinel crystal structure on both the anion and cation sublattices was observed in the ion tracks at low fluences. At intermediate fluences, the overlapping ion tracks induced the formation of a new metastable crystalline phase. Amorphization with a volumetric expansion of ∼35% was observed in spinel irradiated with swift heavy ions (electronic stopping powers >7 keV/nm) at fluences above 1×1019/m2. These results demonstrate that swift heavy ion radiation can induce microstructural changes not achievable with conventional elastic collision irradiation at comparable temperatures.

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Microstructure of Swift Heavy Ion Irradiated SiC, Si3N4 and AlN

MRS Proceedings ◽

10.1557/proc-650-r3.19 ◽

2000 ◽

Vol 650 ◽

Cited By ~ 7

Author(s):

S.J. Zinkle ◽

J.W. Jones ◽

V.A. Skuratov

Keyword(s):

Room Temperature ◽

Single Crystal Silicon ◽

Heavy Ion ◽

Stopping Power ◽

Crystal Silicon ◽

Swift Heavy Ion ◽

Transmission Electron ◽

Track Formation ◽

Temperature Irradiation ◽

Electronic Stopping Power

ABSTRACTCross-section transmission electron microscopy was used to investigate the microstructure of single crystal silicon carbide and polycrystalline silicon nitride and aluminum nitride following room temperature irradiation with either 245 MeV Kr or 710 MeV Bi ions. The fluences ranged from 1×1012/cm2 (single track regime) to 1×1013/cm2. Ion track formation was observed in the Bi ion-irradiated Si3N4 specimen in regions where the electronic stopping power exceeded a critical value of ∼15 keV/nm (depths <24 μm). Ion track formation was not observed at any depth in 245 MeV Kr ion-irradiated Si3N4, in which the maximum electronic stopping power was 14.5 keV/nm. There was no evidence for track formation in either SiC or AlN irradiated with 710 MeV Bi ions, which indicates that the threshold electronic stopping power for track formation in these two ceramics is >34 keV/nm. The high resistance of SiC and AlN to track formation may be due to their high thermal conductivity, but further study is needed to quantitatively evaluate the suitability of the various track formation models.

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Multi-scale Investigation of Heterogeneous Swift Heavy Ion Tracks in Stannate Pyrochlore

Journal of Materials Chemistry A ◽

10.1039/d1ta04924k ◽

2021 ◽

Author(s):

Eric O'Quinn ◽

Cameron Tracy ◽

William F. Cureton ◽

Ritesh Sachan ◽

Joerg C. Neuefeind ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Heavy Ion ◽

X Ray Diffraction ◽

X Ray ◽

Structural Modifications ◽

Multi Scale ◽

Ion Tracks ◽

Swift Heavy Ion ◽

Transmission Electron

Er2Sn2O7 pyrochlore was irradiated with swift heavy Au ions (2.2 GeV), and the induced structural modifications were systematically examined using complementary characterization techniques including transmission electron microscopy (TEM), X-ray diffraction...

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Characterization of swift heavy ion tracks in CaF2 by scanning force and transmission electron microscopy

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2005.06.220 ◽

2005 ◽

Vol 240 (4) ◽

pp. 819-828 ◽

Cited By ~ 71

Author(s):

N. Khalfaoui ◽

C.C. Rotaru ◽

S. Bouffard ◽

M. Toulemonde ◽

J.P. Stoquert ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Heavy Ion ◽

Ion Tracks ◽

Swift Heavy Ion ◽

Transmission Electron ◽

Scanning Force

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Characterization of swift heavy ion tracks in MoS2 by transmission electron microscopy

Chinese Physics B ◽

10.1088/1674-1056/abad1e ◽

2020 ◽

Vol 29 (10) ◽

pp. 106103

Author(s):

Li-Jun Xu ◽

Peng-Fei Zhai ◽

Sheng-Xia Zhang ◽

Jian Zeng ◽

Pei-Pei Hu ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Heavy Ion ◽

Ion Tracks ◽

Swift Heavy Ion ◽

Transmission Electron

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Structural and surface characteristics of room temperature and low temperature swift heavy ion implanted InAs and InSb wafers

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2008.01.065 ◽

2008 ◽

Vol 266 (8) ◽

pp. 1723-1728 ◽

Cited By ~ 1

Author(s):

S. Sudhakar ◽

V. Ganesh ◽

M. Nagarajan ◽

Pawan K. Kulriya ◽

Indra Sulania ◽

...

Keyword(s):

Low Temperature ◽

Room Temperature ◽

Surface Characteristics ◽

Heavy Ion ◽

Swift Heavy Ion ◽

Ion Implanted

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In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide

MRS Proceedings ◽

10.1557/proc-100-293 ◽

1988 ◽

Vol 100 ◽

Cited By ~ 4

Author(s):

M. W. Bench ◽

I. M. Robertson ◽

M. A. Kirk

Keyword(s):

Low Temperature ◽

Room Temperature ◽

National Laboratory ◽

Argonne National Laboratory ◽

Heavy Ion ◽

In Situ Tem ◽

Accelerator Facility ◽

Transmission Electron ◽

Ion Accelerator

ABSTRACTTransmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.

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Cross-Sectional TEM Studies of Indentation-Induced Phase Transformations in Si: Indenter Angle Effects

MRS Proceedings ◽

10.1557/proc-843-t6.4/r10.4 ◽

2004 ◽

Vol 843 ◽

Author(s):

Songqing Wen ◽

James Bentley ◽

Jae-il Jang ◽

G. M. Pharr

Keyword(s):

Electron Microscopy ◽

Room Temperature ◽

Indentation Load ◽

High Load ◽

Cross Sectional ◽

Plan View ◽

Transmission Electron ◽

Cube Corner ◽

Displacement Behavior ◽

Si Wafer

ABSTRACTNanoindentations were made on a (100) single crystal Si wafer at room temperature with a series of triangular pyramidal indenters having centerline-to-face angles ranging from 35° to 85°. Indentations produced at high (80 mN) and low (10 mN) loads were examined in plan-view by scanning electron microscopy and in cross-section by transmission electron microscopy. Microstructural observations were correlated with the indentation load-displacement behavior. Cracking and extrusion are more prevalent for sharp indenters with small centerline-to-face angles, regardless of the load. At low loads, the transformed material is amorphous silicon for all indenter angles. For Berkovich indentations made at high-load, the transformed material is a nanocrystalline mix of Si-I and Si-III/Si-XII, as confirmed by selected area diffraction. Extrusion of material at high loads for the cube-corner indenter reduces the volume of transformed material remaining underneath the indenter, thereby eliminating the pop-out in the unloading curve.

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