Cross-Sectional TEM Studies of Indentation-Induced Phase Transformations in Si: Indenter Angle Effects

ABSTRACTNanoindentations were made on a (100) single crystal Si wafer at room temperature with a series of triangular pyramidal indenters having centerline-to-face angles ranging from 35° to 85°. Indentations produced at high (80 mN) and low (10 mN) loads were examined in plan-view by scanning electron microscopy and in cross-section by transmission electron microscopy. Microstructural observations were correlated with the indentation load-displacement behavior. Cracking and extrusion are more prevalent for sharp indenters with small centerline-to-face angles, regardless of the load. At low loads, the transformed material is amorphous silicon for all indenter angles. For Berkovich indentations made at high-load, the transformed material is a nanocrystalline mix of Si-I and Si-III/Si-XII, as confirmed by selected area diffraction. Extrusion of material at high loads for the cube-corner indenter reduces the volume of transformed material remaining underneath the indenter, thereby eliminating the pop-out in the unloading curve.

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Direct Deposition Reactions Between Nickel and Silicon Substrates

MRS Proceedings ◽

10.1557/proc-311-335 ◽

1993 ◽

Vol 311 ◽

Author(s):

Lin Zhang ◽

Douglas G. Ivey

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Silicon Substrates ◽

Silicide Formation ◽

Cross Sectional ◽

Deposition Rates ◽

Plan View ◽

X Ray ◽

Si Substrates ◽

Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

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High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

MRS Proceedings ◽

10.1557/proc-46-377 ◽

1985 ◽

Vol 46 ◽

Author(s):

D. K. Sadana ◽

J. M. Zavada ◽

H. A. Jenkinson ◽

T. Sands

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Resolution ◽

Phenomenological Model ◽

Room Temperature ◽

Stacking Faults ◽

High Dose ◽

Cross Sectional ◽

Projected Range ◽

Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

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Investigation of initial growth and very thin () ZnO films by cross-sectional and plan-view transmission electron microscopy

Applied Surface Science ◽

10.1016/j.apsusc.2009.10.018 ◽

2010 ◽

Vol 256 (6) ◽

pp. 1849-1854 ◽

Cited By ~ 8

Author(s):

Jae Wook Lee ◽

Seok Kyu Han ◽

Soon-Ku Hong ◽

Jeong Yong Lee

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Zno Films ◽

Initial Growth ◽

Cross Sectional ◽

Plan View ◽

Transmission Electron

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Imaging of Buried Si and Si:Ge Surface Structure Under Amorphous Ge Films by Plan View Transmission Electron Microscopy

MRS Proceedings ◽

10.1557/proc-332-237 ◽

1994 ◽

Vol 332 ◽

Author(s):

Olof C. Hellman

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Phase Shift ◽

Room Temperature ◽

Real Space ◽

Interfacial Structure ◽

Tem Analysis ◽

Plan View ◽

Transmission Electron ◽

Reconstructed Surface

ABSTRACTReal space plan-view Transmission Electron Microscopy (TEM) of the interfacial structure at the amorphous-Ge / Si (111) interface is presented. Ge is deposited at between room temperature and 150°C on either a 5×5 or 7×7 reconstructed surface. Conventional Plan-view TEM analysis reveals microstructural details such as surface steps, reconstruction phase shift boundaries and the reconstruction itself buried under the amorphous film, features which have previously been seen only as clean surfaces in UHV. Also imaged are small regions where Ge grows epitaxially on the Si surface above room temperature. These are seen to appear preferentially at steps and phase shift boundaries.

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A Method for Directly Correlating Site-Specific Cross-Sectional and Plan-View Transmission Electron Microscopy of Individual Nanostructures

Microscopy and Microanalysis ◽

10.1017/s1431927612013517 ◽

2012 ◽

Vol 18 (6) ◽

pp. 1410-1418 ◽

Cited By ~ 9

Author(s):

Daniel K. Schreiber ◽

Praneet Adusumilli ◽

Eric R. Hemesath ◽

David N. Seidman ◽

Amanda K. Petford-Long ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Region Of Interest ◽

Ex Situ ◽

3D Analysis ◽

Cross Sectional ◽

Plan View ◽

Site Specific ◽

Dual Beam ◽

Transmission Electron

AbstractA sample preparation method is described for enabling direct correlation of site-specific plan-view and cross-sectional transmission electron microscopy (TEM) analysis of individual nanostructures by employing a dual-beam focused-ion beam (FIB) microscope. This technique is demonstrated using Si nanowires dispersed on a TEM sample support (lacey carbon or Si-nitride). Individual nanowires are first imaged in the plan-view orientation to identify a region of interest; in this case, impurity atoms distributed at crystalline defects that require further investigation in the cross-sectional orientation. Subsequently, the region of interest is capped with a series of ex situ and in situ deposited layers to protect the nanowire and facilitate site-specific lift-out and cross-sectioning using a dual-beam FIB microscope. The lift-out specimen is thinned to electron transparency with site-specific positioning to within ∼200 nm of a target position along the length of the nanowire. Using the described technique, it is possible to produce correlated plan-view and cross-sectional view lattice-resolved TEM images that enable a quasi-3D analysis of crystalline defect structures in a specific nanowire. While the current study is focused on nanowires, the procedure described herein is general for any electron-transparent sample and is broadly applicable for many nanostructures, such as nanowires, nanoparticles, patterned thin films, and devices.

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High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films

Journal of Materials Research ◽

10.1557/jmr.2005.0234 ◽

2005 ◽

Vol 20 (7) ◽

pp. 1878-1887 ◽

Cited By ~ 5

Author(s):

Takanori Kiguchi ◽

Naoki Wakiya ◽

Kazuo Shinozaki ◽

Nobuyasu Mizutani

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Temperature ◽

Crystallization Process ◽

Stabilized Zirconia ◽

Cross Sectional ◽

Plan View ◽

Transmission Electron ◽

Tem Method

The crystallization process of yttria-stabilized zirconia (YSZ) gate dielectrics deposited on p-Si (001) and SiOx/p-Si(001) substrates and the growth process of SiOx has been investigated directly using high-temperature in situ cross-sectional view transmission electron microscopy (TEM) method and high-temperature plan-view in-situ TEM method. The YSZ layer is crystallized by the nucleation and growth mechanism at temperatures greater than 573 K. Nucleation originates from the film surface. Nucleation occurs randomly in the YSZ layer. Subsequently, the crystallized YSZ area strains the Si surface. Finally, it grows in the in-plane direction with the strain, whereas, if a SiOx layer of 1.4 nm exists, it absorbs the crystallization strain. Thereby, an ultrathin SiOx layer can relax the strain generated in the Si substrate in thin film crystallization process.

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Plan-view TEM of planar interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100174758 ◽

1990 ◽

Vol 48 (4) ◽

pp. 324-325

Author(s):

V.P. Dravid ◽

M.R. Notis ◽

C.E. Lyman ◽

A. Revcolevschi

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Beam ◽

Electronic Materials ◽

Specimen Preparation ◽

Specific Information ◽

Interface Area ◽

Cross Sectional ◽

Plan View ◽

Transmission Electron

Transmission electron microscopy (TEM), incorporating imaging, diffraction and spectrometry has contributed significantly to the understanding of the structure of crystalline interfaces. Traditionally, planar interfaces are investigated using cross-sectional views (electron beam parallel to the interface) of the specimen. However, plan-view TEM (PVTEM) has recently emerged as a viable and supplementary technique to cross-sectional TEM (XTEM). PVTEM enjoys certain definite advantages over XTEM. One important consideration is that the interface in a PV specimen is buried (sandwiched between two crystals) and is expected to be free of artefacts induced by specimen preparation procedures. Moreover, many multilayer electronic materials are amenable to PVTEM because they can be easily backthinned to electron transparency with virtually no damage to the internal interfaces. PV specimens clearly contain much larger interface area than XTEM specimens, which may be of great significance when statistics are considered. Apart from these considerations PVTEM studies can also offer specific information about the interface not always possible in XTEM. In this brief communication we report some of our results on imaging, diffraction and spectrometry of interfaces obtained by viewing the interfaces in the PV mode.

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In-Situannealing Transmission Electron Microscopy(Tem) Study of the Ti/GaAs Interfacial Reactions

MRS Proceedings ◽

10.1557/proc-148-21 ◽

1989 ◽

Vol 148 ◽

Cited By ~ 2

Author(s):

Ki-Bum Kim ◽

Robert Sinclair

Keyword(s):

Electron Microscopy ◽

Gaas Substrate ◽

Metal Film ◽

Interfacial Reactions ◽

Cross Sectional ◽

Plan View ◽

Transmission Electron ◽

Initial Stage ◽

Random Manner

ABSTRACTIn-situ annealing TEM experiments were performed on the Ti/GaAs system in order to study the dynamic behavior of interfacial reactions. Both plan-view and cross-sectional samples were investigated in either diffraction and imaging (both conventional and high resolution) modes. During experiments, we observed the following: (a) At the initial stage of reaction, the TiAs phase formed at the original Ti/GaAs interface with a distinct orientation with respect to the substrate; (b) as the reaction proceeded, the TiAs phase formed in a random manner; (c) finally, the liberated Ga species from the GaAs diffused out to the metal film and formed TiGa2 phase in the plan-view sample similar to the furnace-annealed case. For the cross-sectional sample, however, we did not observe any Ti:Ga phase formation. Instead, we observed the formation of voids both in the Ti film and in the GaAs substrate. The formation of different microstructure between in-situ and furnace annealed cases is explained by the sample geometry during annealing.

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Microstructure Study of the Oxidation of TiN Layers During Sputtering Process

MRS Proceedings ◽

10.1557/proc-1195-b08-23 ◽

2009 ◽

Vol 1195 ◽

Author(s):

Chun Wang

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Rf Sputtering ◽

Cross Sectional ◽

Plan View ◽

Transmission Electron ◽

Good Template ◽

Relationship Of ◽

Catalyzed Oxidation

AbstractTiN provides a good template layer for the epitaxial SrTiO3 (001) growth on Si(001) single crystal substrates by RF sputtering. However, TiN template layer was oxidized into TiO2 during the subsequent sputtering process of electrodes of SrRuO3. The effect of Ru ion catalyzed oxidation and delamination of the TiN layer has been studied using transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The epitaxial orientation relationship of the SrRuO3 and SrTiO3 was reserved to be cube on cube with respect to Si and the crystal quality of the SrRuO3/SrTiO3 film remained even when the TiN template layer was oxidized. The stress in the thin film of SrRuO3/SrTiO3/TiN structure could be determined from the buckle shape in both plan view and cross sectional TEM images.

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