The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers

1986 ◽  
Vol 74 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
D. C. Jacobson
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Composition Modulation ◽  
Beam Sputtering ◽  
Mixing Distance ◽  
Diffraction Peaks ◽  
Amorphous Si

AbstractArtificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.

The Enhancement of the Interdiffusion in Si/Ge Amorphous Artificial Multilayers by Additions of B and Au

1989 ◽  
Vol 163 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J.M. Poate ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Phase ◽  
Ion Beam ◽  
Structural Defects ◽  
Electronic Effects ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
Composition Modulation ◽  
Beam Sputtering ◽  
Amorphous Si

AbstractAmorphous Si/ amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiflusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion.

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

MODULATION WAVELENGTH DEPENDENCE OF THE INTERDIFFUSION IN AMORPHOUS Si/Ge MULTILAYER FILMS

1985 ◽  
Vol 56 ◽  
Author(s):  
S.M. PROKES ◽  
F. SPAEPEN
Keyword(s):  
Ion Beam ◽  
Wavelength Dependence ◽  
Dangling Bond ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Beam Sputtering ◽  
Amorphous Si ◽  
Effect Of Copper ◽  
Oxygen Impurities ◽  
Modulation Wavelength

AbstractCompositionally modulated amorphous Si/Ge thin films with repeat lengths (wavelengths) between 4.8 nm and 5.83 nm have been prepared using ion beam sputtering. The interdiffusion coefficient was determined from the decrease in the (000) x-ray satellite intensities with annealing, and was found to be relatively large, so that it could easily be measured without crystallization occurring. The effect of copper and oxygen impurities was found to be negligible. The dependence of the interdiffusivity on the modulation wavelength is similar to that of an ordering system. The temperature and wavelength dependence in the range T = 550-630 K is described by Dλ = 1.47×10−10 m.s−1 exp(-l.6 eV/kT)(l-21.8/λ2(nm)). It is suggested that diffusion is governed by the breaking of one bond near a pre-existing dangling bond.

Contamination Effects in Mo/Ni Superlattices

1991 ◽  
Vol 229 ◽  
Author(s):  
Steven M. Hues ◽  
John L. Makous
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Bilayer Thickness ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Impurity Incorporation ◽  
X Ray ◽  
Beam Sputtering ◽  
Deposited Films

AbstractA softening of the shear elastic constant c44 has been observed previously in Mo/Ni superlattices as a function of decreasing bilayer thickness below approximately 100 Å.[1] We have prepared a series of Mo/Ni superlattice films by ion beam sputtering doped with varying concentrations of either aluminum or oxygen. The chemical and structural properties of these films were then determined using x-ray diffraction (XRD) and Auger electron spectroscopy (AES). The shear elastic properties were characterized by measuring the surface acoustic wave (SAW) velocity of the deposited films. We demonstrate structural and elastic property effects resulting from Al and O impurity incorporation in Mo/Ni multilayers.

In-Plane Magnetic and Structural Anisotropies in NI and FE Films Produced by Ion-Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
W. A. Lewis ◽  
M. Farle ◽  
B. M. Clemens ◽  
R. L. White
Keyword(s):  
Ion Beam ◽  
Anisotropy Field ◽  
Angle Of Incidence ◽  
Induced Anisotropy ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Out Of Plane ◽  
Beam Sputtering

ABSTRACTWe report the results of our microstructural investigations into the origin of in-plane uniaxial magnetic anisotropies induced in Ni and Fe thin films by low energy ion beam assisted deposition. 1000 Å films were prepared by ion beam sputtering onto amorphous silica substrates under simultaneous bombardment by 100 eV Xe+ ions under an oblique angle of incidence. The induced anisotropy is studied as a function of ion-to-adsorbate atom arrival ratio, R, from values of 0 to 0.35. The maximum anisotropy field is 150 Oe for Ni and 80 Oe for Fe, but their hard axes are oriented orthogonal to each other. Asymmetric x-ray diffraction is employed to study both in-plane and out-of-plane lattice spacings and crystallographic orientation. In agreement with previous work, we find evidence of a anisotropic in-plane strain of magnitude 0.2-0.5%. In all films, the direction perpendicular to the ion bombardment is compressed relative to parallel. The uniaxial magnetic anisotropy is correlated with this in-plane anisotropic strain using a simple magnetoelastic model.

Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts

2007 ◽  
Vol 556-557 ◽  
pp. 713-716 ◽  
Author(s):  
Yu Cao ◽  
S. Alfonso Pérez-García ◽  
Lars Nyborg
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
High Vacuum ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Beam Sputtering ◽  
Sic Wafer

This study deals with the interfacial reactions and electrical properties of Ta/4H-SiC contacts. Tantalum thin films (~100 nm) were deposited onto SiC wafer at room temperature by argon ion beam sputtering. The samples were then heated in high vacuum at 650°C, 800°C or 950°C for 30 min. X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the samples. Ohmic contact is formed in the studied samples after annealing at or above 800°C even though considerable amount of metallic Ta still exists. The reaction zone possesses a layered structure of Ta2C/Ta2C+Ta5Si3/SiC. High enough temperature is needed to provide for sufficient interface change to tailor the contact properties.

Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

2007 ◽  
Vol 336-338 ◽  
pp. 1788-1790
Author(s):  
Yu Ju Chen ◽  
Wen Cheng J. Wei
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Crystal Growth Process ◽  
Transmission Electron ◽  
Beam Sputtering

Ion-beam sputtering deposition is a physical deposited method which uses accelerated ionbeam to sputter oxide or metal targets, and deposits atoms on substrate. Thin films of yttrium-stabilized zirconia (YSZ) were deposited on Si (100) wafer and NiO/YSZ plate. Scanning electron microscopy and transmission electron microscopy with EDS were employed to study the microstructural and chemically stoichiometric results of the films and the crystal growth process by various heat treatments. X-ray diffraction was also used to analysis crystalline phase of the YSZ films. The influence of different targets, substrates deposited efficiency and the properties of the film will be presented and discussed.

Novel Multiferroic Lead-Free BaTiO3/FeBSi Composite Films

2010 ◽  
Vol 123-125 ◽  
pp. 157-160
Author(s):  
Zhen Zhen Zhou ◽  
Deng Lu Hou ◽  
Li Ma ◽  
Cong Mian Zhen
Keyword(s):  
Intermediate Phase ◽  
Ion Beam ◽  
Composite Films ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Microscopy Image ◽  
Beam Sputtering

“Green” multiferroic BaTiO3/FeBSi composite films were grown by pulsed laser deposition and ion beam sputtering on general Pt/Ti/SiO2/Si substrates. Room temperature X-ray diffraction and Raman scattering show that the crystal structures of BaTiO3 and FeBSi are tetragonal and amorphous, respectively, and no additional or intermediate phase peaks appears in the composite films. A cross-sectional scanning electron microscopy image clearly demonstrates a 2-2 type structure with sharp interface between the top FeBSi layer and bottom BaTiO3 layer. The magnetic properties of the top FeBSi are obviously modified by the bottom BaTiO3. The composite films show obvious ferroelectric feature.

Composition- and Temperature-Dependence of Ion Mixing in Amorphous Si/Ge Artificial Multilayers

1988 ◽  
Vol 128 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
F. Priolo ◽  
D. C. Jacobson
Keyword(s):  
Temperature Dependence ◽  
Dose Rate ◽  
Diffraction Peak ◽  
Mixing Length ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Composition Modulation ◽  
Amorphous Si ◽  
Diffusive Component

ABSTRACTAmorphous Si/Ge artificial multilayers with a repeat length of around 60A have been partially mixed with 1.5 MeV Ar+ ions at temperatures in the range 77–673K. The change in the intensity of the first X-ray diffraction peak resulting from the composition modulation is used to determine the mixing lengths. The diffusive component of the square of the mixing length, at a given dose, is independent of the dose rate and has an Arrhenius-type temperature dependence, with activation enthalpies between 0.19 and 0.22 eV, depending on the average composition.

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